SMPS MOSFET. V DSS R DS(on) max I D
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1 PD A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET Power MOSFET V DSS R DS(on) max I D 30V 12.5mΩ 61A Benefits l Ultra-Low Gate Impedance l Very Low R DS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3708 I-Pak IRFU3708 Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V I T A = 25 C Continuous Drain Current, V V 61 I T A = 70 C Continuous Drain Current, V V 51 A I DM Pulsed Drain Current 244 P A = 25 C Maximum Power Dissipationƒ 87 W P A = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient 1 * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page /13/04
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = 4.5V, I D = 12A ƒ V GS = 2.8V, I D = 7.5A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 20 V µa DS = 24V, V GS = 0V 0 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 12V Gate-to-Source Reverse Leakage -200 na V GS = -12V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 49 S V DS = 15V, I D = 50A Q g Total Gate Charge 24 I D = 24.8A Q gs Gate-to-Source Charge 6.7 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 5.8 V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, I D = 24.8A, V DS = 15V t d(on) Turn-On Delay Time 7.2 V DD = 15V t r Rise Time 50 I ns D = 24.8A t d(off) Turn-Off Delay Time 17.6 R G = 0.6Ω t f Fall Time 3.7 V GS = 4.5V ƒ C iss Input Capacitance 2417 V GS = 0V C oss Output Capacitance 707 V DS = 15V C rss Reverse Transfer Capacitance 52 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 213 mj I AR Avalanche Current 62 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) 61 showing the A I G SM Pulsed Source Current integral reverse 244 (Body Diode) p-n junction diode V T V SD Diode Forward Voltage J = 25 C, I S = 31A, V GS = 0V ƒ 0.80 T J = 125 C, I S = 31A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 125 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0A/µs ƒ 2 D S
3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U3708PbF V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 61A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 24.8A V DS = 15V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T = 175 J C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 70 60 LIMITED BY PACKAGE V GS V DS R D D.U.T. R G I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit + - V DD V DS 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 R DS ( on ), Drain-to-Source On Resistance ( R DS(on), Drain-to -Source On Resistance ( IRFR/U3708PbF Ω ) Ω) VGS = 4.5V VGS = V I D = 31A I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) 12V I AS V GS Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF I G D.U.T. I D Current Sampling Resistors + V - DS V GS Q GS Fig 14a&b. Gate Charge Test Circuit and Waveform tp V(BR)DSS R G V DS 20V V G tp L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) Fig 13. On-Resistance Vs. Gate Voltage I D TOP A 20.7A BOTTOM 24.8A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6
7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE 7
8 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DES IGNAT E S LE AD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASSEMBLY SITE CODE 8
9 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.7 mh R G = 25Ω, I AS = 24.8 A. ƒ Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information12/04 9
10 Note: For the most current drawings please refer to the IR website at:
11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IRFR3708PBF IRFR3708TRPBF IRFR3708TRRPBF IRFR3708TRLPBF
SMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
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More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationIRFR3806PbF IRFU3806PbF
PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95549A SMPS MOSFET IRFR3N5DPbF IRFU3N5DPbF HEXFET Power MOSFET Appications High frequency DC-DC converters Lead-Free V DSS R DS(on) max I D 50V 8Ω 4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
Utra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Lead-Free Description G IRFR3303PbF IRFU3303PbF HEXFET Power MOSFET
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationIRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.
PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A
HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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