SMPS MOSFET. V DSS R DS(on) max I D

Transcription

1 PD B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DS(on) max I D 30V 12.5mΩ 61A Benefits l Ultra-Low Gate Impedance l Very Low R DS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3708 I-Pak IRFU3708 Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V I T A = 25 C Continuous Drain Current, V V 61 I T A = 70 C Continuous Drain Current, V V 51 A I DM Pulsed Drain Current 244 P A = 25 C Maximum Power Dissipationƒ 87 W P A = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient 1 * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page /22/00

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = 4.5V, I D = 12A ƒ V GS = 2.8V, I D = 7.5A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 20 V µa DS = 24V, V GS = 0V 0 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 12V Gate-to-Source Reverse Leakage -200 na V GS = -12V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 49 S V DS = 15V, I D = 50A Q g Total Gate Charge 24 I D = 24.8A Q gs Gate-to-Source Charge 6.7 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 5.8 V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, I D = 24.8A, V DS = 15V t d(on) Turn-On Delay Time 7.2 V DD = 15V t r Rise Time 50 I ns D = 24.8A t d(off) Turn-Off Delay Time 17.6 R G = 0.6Ω t f Fall Time 3.7 V GS = 4.5V ƒ C iss Input Capacitance 2417 V GS = 0V C oss Output Capacitance 707 V DS = 15V C rss Reverse Transfer Capacitance 52 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 213 mj I AR Avalanche Current 62 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body Diode) 61 showing the A I G SM Pulsed Source Current integral reverse 244 (Body Diode) p-n junction diode V T V SD Diode Forward Voltage J = 25 C, I S = 31A, V GS = 0V ƒ 0.80 T J = 125 C, I S = 31A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 125 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0A/µs ƒ 2 D S

3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS = 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 61A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I D = 24.8A V DS = 15V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) 0 1 T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 0 us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 70 V DS R D 60 LIMITED BY PACKAGE V GS D.U.T. R G I D, Drain Current (A) V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit + - V DD V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J = P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 R DS ( on ), Drain-to-Source On Resistance ( Ω ) R DS(on), Drain-to -Source On Resistance (Ω) IRFR/U VGS = 4.5V VGS = V I D = 31A I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) 12V I AS V GS Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF D.U.T. I G I D Current Sampling Resistors + V - DS V GS Q GS Fig 14a&b. Gate Charge Test Circuit and Waveform tp V (B R)D SS R G V DS 20V V G tp L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) Fig 13. On-Resistance Vs. Gate Voltage I D TOP A 20.7A BOTTOM 24.8A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6

7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.215) 5.21 (.205) 6.73 (.265) 6.35 (.250) - A (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) (.040) 1.64 (.025) (.245) 5.97 (.235).42 (.4) 9.40 (.370) 6.45 (.245) 5.68 (.224) LEAD ASSIGNMENTS 1 - G A TE 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) 3X - B (.035) 0.64 (.025) 0.25 (.0) M A M B 0.51 (.020) M IN (.023) 0.46 (.018) 2 - D R A IN 3 - S O U R CE 4 - D R A IN 2.28 (.090) 4.57 (.180) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 3 C O N FO R M S TO JE D E C O U TLIN E TO -252 AA. 4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP, SOLDER DIP MAX (.006). D-Pak (TO-252AA) Part Marking Information 7

8 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 5.46 (.215) 5.21 (.205) 1.52 (.060) 1.15 (.045) 6.73 (.265) 6.35 (.250) - A (.245) 5.97 (.235) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - SOURCE 4 - D RA IN B (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 3 C O NF O R MS TO JEDE C O UTLINE TO -25 2AA. 4 D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP, SOLDER DIP MAX (.006). 3X 1.14 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 0.89 (.035) 0.64 (.025) 0.25 (.0 ) M A M B 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) I-Pak (TO-251AA) Part Marking Information 8

9 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH 16 m m NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.7 mh R G = 25Ω, I AS = 24.8 A. ƒ Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 071 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 8/00 9

10 Note: For the most current drawings please refer to the IR website at: