Absolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D

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1 PD A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 0% Tested for Rg Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low R DS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. S S S G SO-8 Top View DEVICE CHARACTERISTICS IRF7809AV R DS(on) 7.0mΩ Q G 41nC Q sw 14nC Q oss 30nC A D D D D Absolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage 30 V Gate-Source Voltage V GS ±12 Continuous Drain or Source T A = 25 C I D 13.3 Current (V GS 4.5V) T L = 90 C 14.6 A Pulsed Drain Current I DM 0 Power Dissipation T A = 25 C P D 2.5 W T L = 90 C 3.0 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body Diode) I S 2.5 A Pulsed Source Current I SM 50 Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambientƒ R θja 50 C/W Maximum Junction-to-Lead R θjl 20 C/W 08/23/05

2 Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BS 30 V V GS = 0V, I D = 250µA Breakdown Voltage Static Drain-Source R DS(on) mω V GS = 4.5V, I D = 15A on Resistance Gate Threshold Voltage V GS(th) 1.0 V = V GS,I D = 250µA Drain-Source Leakage I DSS 30 = 24V, V GS = 0 Current Current* 150 µa = 24V, V GS = 0, Tj = 0 C Gate-Source Leakage I GSS ±0 na V GS = ±12V Current* Total Gate Chg Cont FET Q G V GS =5V, I D =15A, =20V Total Gate Chg Sync FET Q G V GS = 5V, < 0mV Pre-Vth Q GS1 7.0 = 20V, I D = 15A Gate-Source Charge Post-Vth Q GS2 2.3 nc Gate-Source Charge Gate to Drain Charge Q GD 12 I D =15A, =16V Switch Chg(Q gs2 Q gd ) Q sw Output Charge* Q oss = 16V, V GS = 0 Gate Resistance R G Ω Turn-on Delay Time t d (on) 14 V DD = 16V, I D = 15A Rise Time t r 36 ns V GS = 5V Turn-off Delay Time t d (off) 96 Clamped Inductive Load Fall Time t f Input Capacitance C iss 3780 Output Capacitance C oss 60 pf = 16V, V GS = 0 Reverse Transfer Capacitance C rss 130 Source-Drain Rating & Characteristics Parameter Min Typ Max Units Conditions Diode Forward V SD 1.3 V I S = 15A, V GS = 0V Voltage* Reverse Recovery Charge Q rr 120 nc di/dt ~ 700A/µs = 16V, V GS = 0V, I S = 15A Reverse Recovery Q rr(s) 150 nc di/dt = 700A/µs Charge (with Parallel (with BQ040) Schottky) = 16V, V GS = 0V, I S = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < sec. Typ = measured - Q oss Typical values measured at V GS = 4.5V, I F = 15A. 2

3 I D, Drain-to-Source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 25 C , Drain-to-Source Voltage (V) I D, Drain-to-Source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 150 C , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 150 C T J = 25 C = 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 15A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs Cgd, C ds Crss = Cgd Coss = Cds Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I D = 15A = 20V C rss 0 1 0, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 150 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms T = 25 C ms A TJ = 150 C Single Pulse , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 16 R D I D, Drain Current (A) Fig a. Switching Time Test Circuit 90% R G V GS V Pulse Width 1 µs Duty Factor 0.1 % D.U.T. - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thja TA t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS (on), Drain-to-Source On Resistance (Ω) R DS(on), Drain-to -Source On Resistance ( Ω) IRF7809AVPbF V GS = 4.5V V GS = V I D = 15A I D, Drain Current (A) V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage 12V I AS V GS Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF D.U.T. I G I D Current Sampling Resistors V - DS V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)DSS R G 20V V G tp Q GS L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 6.7A 9.5A 15A Starting T, Junction Temperature ( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy and Waveforms Vs. Drain Current 6

7 SO-8 Package Outline Dimensions are shown in milimeters (inches) ' % ',0,1&(6 0,1 0; 0,//,0(7(56 0,1 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ ƒ ƒ ƒ ƒ H.[ƒ & \ ;E >@ ;/ ;F >@ & % 127(6 ',0(16,21,1* 72/(51&,1*3(560(<0 &21752//,1*',0(16,2,//,0(7(5 ',0(16,2165(62:1,,//,0(7(56>,1&(6@ 287/,1(&21) ('(&287/,1(06 ',0(16,21'2(6127,1&/8'(02/' ,216 02/' , (;&(('>@ ',0(16,21'2(6127,1&/8'(02/' ,216 02/' , (;&(('>@ ',0(16,21,67(/(1*72)/(')2562/'(5,1*72 68%6757( SO-8 Part Marking Information >@ ;>@ )22735,17 ;>@ ;>@ (;03/(7,6,61,5)026)(7,17(517,21/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 '(6,*17(6/(')5(( 352'8&7237,21/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( %(5 7

8 SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA (.566 ) (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.08/05 8