HEXFET Power MOSFET V DSS R DS(on) max (mw) I D
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- Mervin Goodwin
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1 l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V 98@V GS = -V -3.0A 65@V GS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. G S 2 3 D Micro3 TM Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLML5203TRPbF Micro3 (SOT-23) Tape and Reel 3000 IRLML5203TRPbF Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -30 V I T A = 25 C Continuous Drain Current, V -V -3.0 I T A = 70 C Continuous Drain Current, V -V -2.4 A I DM Pulsed Drain Current -24 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.80 W Linear Derating Factor mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 0 C/W International Rectifier Submit Datasheet Feedback April 28, 204
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, I D = -250μA ΔV (BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = -ma 98 V GS = -V, I D = -3.0A R DS(on) Static Drain-to-Source On-Resistance mω 65 V GS = -4.5V, I D = -2.6A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250μA g fs Forward Transconductance 3. S V DS = -V, I D = -3.0A I DSS Drain-to-Source Leakage Current -.0 V DS = -24V, V GS = 0V µa -5.0 V DS = -24V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -20V na Gate-to-Source Reverse Leakage 0 V GS = 20V Q g Total Gate Charge I D = -3.0A Q gs Gate-to-Source Charge nc V DS = -24V Q gd Gate-to-Drain ("Miller") Charge V GS = -V t d(on) Turn-On Delay Time 2 V DD = -5V t r Rise Time 8 I D = -.0A ns t d(off) Turn-Off Delay Time 88 R G = 6.0Ω t f Fall Time 52 V GS = -V C iss Input Capacitance 5 V GS = 0V C oss Output Capacitance 7 pf V DS = -25V C rss Reverse Transfer Capacitance 43 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -.3 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -24 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.3A, V GS = 0V t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = -.3A Q rr Reverse Recovery Charge 2 8 nc di/dt = -0A/μs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 400μs; duty cycle 2% International Rectifier Submit Datasheet Feedback April 28, 204
3 -I D, Drain-to-Source Current (A) 0 0. VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20μs PULSE WIDTH 0.0 T J = 25 C V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM-2.7V -2.70V 20μs PULSE WIDTH 0. T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 50 C T J = 25 C V DS= -5V 20μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 3.0A V GS = -V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature International Rectifier Submit Datasheet Feedback April 28, 204
4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss 0 0 -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I D = -3.0A V DS =-24V V DS =-5V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area International Rectifier Submit Datasheet Feedback April 28, 204
5 3.0 V DS R D -I D, Drain Current (A) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 D = PDM 0.0 t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient International Rectifier Submit Datasheet Feedback April 28, 204
6 R DS(on), Drain-to -Source On Resistance ( Ω) R DS (on), Drain-to-Source On Resistance (Ω) IRLML5203PbF V GS = -4.5V I D = -3.0A 0. V GS = -V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2μF.3μF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit International Rectifier Submit Datasheet Feedback April 28, 204
7 -V GS(th), Variace ( V ) Power (W) IRLML5203PbF I D = -250μA T J, Temperature ( C ) Time (sec) Fig 4. Threshold Voltage Vs. Temperature Fig 5. Typical Power Vs. Time International Rectifier Submit Datasheet Feedback April 28, 204
8 Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) 6 D 5 S Y M B O L A DIME NSIONS MILLIMETERS INCHES MIN MAX MIN MAX A E ccc E C B A A b 0.30 c 0.08 D E e e B 5 E e 0.95 BSC.0375 BSC e.90 BSC.075 BSC L L 0.25 BS C.08 BSC aaa bbb ccc H A A2 L A 3X b aaa C bbb C A B 3 S URF 7 3X L 0 RECOMMENDED FOOTPRINT NOT ES X [.038]. DIMENSIONING AND TOLERANCING PER ASME Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES [.79] 3. CONTROLLING DIMENSION: MILLIMETER. 4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. 7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB [.0375].90 [.075] X [.03] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML00 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 LEAD-FREE ASSEMBLY LOT CODE S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 X = IRLML2244 Y = IRLML2246 Z = IRFML9244 DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W A B C D X 25 Y 26 Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y WORK WEEK W A 27 A B 28 B C 29 C D 30 D E F G H J K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback April 28, 204
9 Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback April 28, 204
10 Qualification information Qualification level Cons umer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS compliant Micro3 (SOT-23) MS L (per JEDE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release Revision History Date 4/28/204 Comment Updated data sheet with new IR corporate template. Updated package outline & part marking on page 8. Added Qualification table -Qual level "Consumer" on page. Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback April 28, 204
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More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
More informationLinear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationHEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.045Ω I D = 3.9A
Surface Mount Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fuy Avaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
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