AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

Transcription

1 Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. V DSS -V R DS(on) max I D -3A D HEXFET Power MOSFET G D-Pak G D S Gate Drain Source S Base part number Package Type D-Pak Standard Pack Form Quantity Orderable Part Number Tube 75 Tape and Reel Left 3000 TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V -V -3 I T C = C Continuous Drain Current, V -V -8.2 A I DM Pulsed Drain Current -52 P C = 25 C Maximum Power Dissipation 66 W Linear Derating Factor 0.53 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy (Thermally Limited) 94 mj I AR Avalanche Current -8.4 A E AR Repetitive Avalanche Energy 6.3 mj dv/dt Pead Diode Recovery dv/dt -5.0 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W R JA Junction-to-Ambient HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage - V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient -0.2 V/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance V GS = -V, I D = -7.8A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA gfs Forward Trans conductance 3.2 S V DS = -25V, I D = -7.8A I DSS Drain-to-Source Leakage Current -25 V µa DS = -V, V GS = 0V -250 V DS = -80V,V GS = 0V,T J =50 C Gate-to-Source Forward Leakage - V I GSS na GS = -20V Gate-to-Source Reverse Leakage V GS = 20V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 58 I D = -8.4A Q gs Gate-to-Source Charge 8.3 nc V DS = -80V Q gd Gate-to-Drain Charge 32 V GS = -V t d(on) Turn-On Delay Time 5 V DD = -50V t r Rise Time 58 I D = -8.4A ns t d(off) Turn-Off Delay Time 45 R G = 9. t f Fall Time 46 R D = 6.2 Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 760 V GS = 0V C oss Output Capacitance 260 pf V DS = -25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S -3 (Body Diode) showing the A Pulsed Source Current integral reverse I SM -52 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.6 V T J = 25 C,I S = -7.8A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C,I F = -8.4A Q rr Reverse Recovery Charge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. ) Starting T J = 25 C, L = 6.4mH, R G = 25, I AS = -7.8A (See fig. 2) I SD -7.8A, di/dt 200A/µs, V DD V (BR)DSS, T J 50 C. Pulse width 300µs; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF9530N data and test conditions. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 90 C

3 -I D, Drain-to-Source Current (A) 0. TOP BOTTOM VGS -5V -V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -4.5V 20µs PULSE WIDTH 0.0 T J = 25 C 0. -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) TOP BOTTOM VGS -5V -V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V -4.5V 20µs PULSE WIDTH 0. T J = 50 C 0. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics -I D, Drain-to-Source Current (A) T J = 25 C T J= 50 C V DS = V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = -4A V GS = -V T J, Junction Temperature ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature

4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = Cgd C oss = C ds + Cgd C iss C oss C rss 0 A -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = D -8.4A V DS =-80V V DS =-50V V DS =-20V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) T J= 50 C T J= 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us us ms TC = 25 C TJ = 50 C Single Pulse ms 0 -V DS, Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

5 5 -I D, Drain Current (A) Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 Fig 2a. Unclamped Inductive Test Circuit E AS, Single Pulse Avalanche Energy (mj) I D TOP -3.5A -4.9A BOTTOM -7.8A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy vs. Drain Current Fig 2b. Unclamped Inductive Waveforms Fig 3a. Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 Fig 4. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET Power MOSFETs

8 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFR54 YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

9 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA mm Note: For the most current drawing please refer to IR website at

10 Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level D-Pak MSL Machine Model Class M2 (+/- 200V) AEC-Q-002 ESD Human Body Model Class HB (+/- 0V) AEC-Q-00 Charged Device Model Class C5 (+/- 25V) AEC-Q-005 RoHS Compliant Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 2/2/205 Corrected ordering table on page. Comments Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury