IRF6641TRPbF DIGITAL AUDIO MOSFET. Key Parameters V DS 200 V R DS(ON) V GS = 10V 51 m Qg typ. 34 nc R G(int) typ. 1.0

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1 Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower EMI Can deliver up to 400 W per channel into 8 load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260 C reflow) DIGITAL AUDIO MOSFET IRF664TRPbF Key Parameters V DS 200 V R DS(ON) V GS = 0V 5 m Qg typ. 34 nc R G(int) typ..0 MZ DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF664PbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-035 is followed regarding the manufacturing method and processes. The DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF664PbF DirectFET Medium Can Tape and Reel 4800 IRF664TRPbF Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ±20 V I T C = 25 C Continuous Drain Current, V 0V 26 I T A = 25 C Continuous Drain Current, V 0V 4.6 I T A = 70 C Continuous Drain Current, V 0V 3.7 A I DM Pulsed Drain Current 37 P C = 25 C Power Dissipation 89 P A = 25 C Power Dissipation 2.8 W P A = 70 C Power Dissipation.8 E AS Single Pulse Avalanche Energy 46 mj I AR Avalanche Current A Linear Derating Factor W/ C T J Operating Junction and -40 to + 50 C T STG Storage Temperature Range Notes through are on page International Rectifier July, 203

2 IRF664TRPbF Thermal Resistance Parameter Typ. Max. Units R JA Junction-to-Ambient 45 R JA Junction-to-Ambient 2.5 R JA Junction-to-Ambient 20 C/W R JC Junction-to-Case.4 R J-PCB Junction-to-PCB Mounted.0 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 0.23 V/ C Reference to 25 C, I D =.0mA R DS(on) Static Drain-to-Source On-Resistance m V GS = 0V, I D = 5.5A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50µA V GS(th) Gate Threshold Voltage Coefficient - mv/ C I DSS Drain-to-Source Leakage Current 20 µa V DS = 200V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J =25 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V T J = 25 C (unless otherwise specified) gfs Forward Transconductance 3 S V DS = 0V, I D = 5.5A Q g Total Gate Charge Q gs Pre-VthGate-to-Source Charge 8.7 V DS = V Q gs2 Post-Vth Gate-to-Source Charge.9 nc V GS = 0V Q gd Gate-to-Drain Charge I D = 5.5A Q godr Gate Charge Overdrive 4 Q sw Switch Charge (Q gs2 + Q gd ) V DS = 6V, V GS = 0V t d(on) Turn-On Delay Time 6 V DD = V, V GS = 0V t r Rise Time ns I D = 5.5A t d(off) Turn-Off Delay Time 3 R G = 6.2 t f Fall Time 6.5 C iss Input Capacitance 2290 V GS = 0V C oss Output Capacitance 240 V DS = 25V C rss Reverse Transfer Capacitance 46 pf ƒ =.0MHz C oss Output Capacitance 780 V GS =0V, V DS =.0V, ƒ=.0mhz C oss Output Capacitance V GS =0V, V DS =60V, ƒ=.0mhz Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 26 A MOSFET symbol D (Body Diode) showing the G I SM Pulsed Source Current 37 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C, I S = 5.5A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 5.5A,V DD = V Q rr Reverse Recovery Charge nc di/dt = A/µs International Rectifier July, 203

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) Typical R DS(on) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF664TRPbF VGS TOP 5V 0V 8.0V BOTTOM 7.0V 7.0V VGS TOP 5V 0V 8.0V BOTTOM 7.0V V 60µs PULSE WIDTH Tj = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.5 I D = 5.5A V GS = 0V 0 0. T J = 50 C T J = 25 C T J = -40 C V DS = 0V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED 2.0 I D = 5.5A 00 C rss = C gd C oss = C ds + C gd V DS = 60V V DS = V V DS = 40V C iss 0 C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs Gate-to-Source Voltage International Rectifier July, 203

4 I D, Typical V GS(th), Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRF664TRPbF 0 T J = 50 C T J = 25 C T J = -40 C 0 0 OPERATION IN THIS AREA LIMITED BY R DS (on) V GS = 0V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 50 C Single Pulse 0msec V DS, Drain-to-Source Voltage (V) µsec msec Fig 7. Typical Source-Drain Diode Forward Voltage 5 Fig 8. Maximum Safe Operating Area I D = 50µA I D = 250µA I D =.0mA I D =.0A T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature T J, Temperature ( C ) Fig 0. Typical Threshold Voltage vs. Junction Temperature Thermal Response ( Z thja ) 0 D = SINGLE PULSE ( THERMAL RESPONSE ) 0.00 E-006 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja + Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient International Rectifier July, 203

5 E AS, Single Pulse Avalanche Energy (mj) Typical R DS (on) ( m ) IRF664TRPbF R DS(on), Drain-to -Source On Resistance (m ) I D = 5.5A T J = 25 C T J = 25 C T J = 25 C Vgs = 7.0V Vgs = 8.0V Vgs = 0V Vgs = 5V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance vs. Gate Voltage Fig 3. Typical On-Resistance vs. Drain Current V DS L 5V DRIVER I D TOP 3.7A 5.7A BOTTOM A R G D.U.T + I AS - V DD A 20V tp 0.0 Fig 5a. Unclamped Inductive Test Circuit tp V (BR)DSS Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. Drain Current I AS Fig 5b. Unclamped Inductive Waveforms Fig 6a. Switching Time Test Circuit Fig 6b. Switching Time Waveforms International Rectifier July, 203

6 Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform Fig 8. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

7 IRF664TRPbF DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. Note: For the most current drawing please refer to IR website at International Rectifier July, 203

8 IRF664TRPbF DirectFET Outline Dimension, MZ Outline (Medium Size Can, D-Designation). Please see DirectFET application note AN-035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. CODE A B C D E F G H J K L M R P DIMENSIONS METRIC IMPERIAL DirectFET Part Marking Note: For the most current drawing please refer to IR website at International Rectifier July, 203

9 IRF664TRPbF DirectFET Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF664TRPBF). For 0 parts on 7" reel, order IRF664TRPBF CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL CODE A B C D E F G H REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR OPTION (QTY 0) METRIC IMPERIAL METRIC IMPERIAL Note: For the most current drawing please refer to IR website at Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant DirectFET Consumer (per JEDEC JESD47F) MSL (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.77mH, R G = 25, I AS = A. Surface mounted on in. square Cu board. Pulse width 400µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermal couple mounted to top (Drain) of part. R is measured at T J of approximately 90 C. IR WORLD HEADQUARTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier July, 203

10 IRF664TRPbF Revision History Date Comments 06/28/203 Added the Consumer qualification level information, on page 9. 05/7/203 Converted the data sheet to Class-D Audio formatting template. No change in electrical parameters International Rectifier July, 203