IRFHM8326PbF. HEXFET Power MOSFET. V DSS 30 V V GS max ±20 V R DS(on) max 4.7 V GS = 10V)
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1 V DSS 30 V V GS max ±20 V R DS(on) max 4.7 (@ V GS = 0V) m (@ V GS = 4.5V) 6.7 Qg (typical) 20 nc I D (@T C (Bottom) = 25 C) 70 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for Buck Converters Features Benefits Low Thermal Resistance to PCB (<3.4 C/W) Enable better thermal dissipation Low Profile (<.05 mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8326PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8326TRPbF Absolute Maximum Ratings Notes through are on page 9 Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I T A = 25 C Continuous Drain Current, V 0V 9 I T A = 70 C Continuous Drain Current, V 0V 5 I T C(Bottom) = 25 C Continuous Drain Current, V 0V 70 I T C(Bottom) = C Continuous Drain Current, V 0V 44 I T C = 25 C Continuous Drain Current, V 0V (Source Bonding 25 Technology Limited) I DM Pulsed Drain Current 278 P A = 25 C Power Dissipation 2.8 P C(Bottom) = 25 C Power Dissipation 37 Linear Derating Factor W/ C T J Operating Junction and -55 to + 50 T STG Storage Temperature Range A W C
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 22 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 0V, I D = 20A m V GS = 4.5V, I D = 20A V GS(th) Gate Threshold Voltage V V V GS(th) Gate Threshold Voltage Coefficient -0 mv/ C DS = V GS, I D = 50µA I DSS Drain-to-Source Leakage Current.0 V DS = 24V, V GS = 0V µa 50 V DS = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 70 S V DS = 0V, I D = 20A Q g Total Gate Charge 39 nc V GS = 0V, V DS = 5V, I D = 20A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 4.8 V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge 2.6 nc V GS = 4.5V Q gd Gate-to-Drain Charge 6.5 I D = 20A Q godr Gate Charge Overdrive 6. Q sw Switch Charge (Q gs2 + Q gd ) 9. Q oss Output Charge nc V DS = 6V, V GS = 0V R G Gate Resistance.9 t d(on) Turn-On Delay Time 2 V DD = 5V, V GS = 4.5V t r Rise Time 35 ns I D = 20A t d(off) Turn-Off Delay Time 8 R G =.8 t f Fall Time 2 C iss Input Capacitance 2496 V GS = 0V C oss Output Capacitance 524 pf V DS = 0V C rss Reverse Transfer Capacitance 273 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. E AS Single Pulse Avalanche Energy 58 I AR Avalanche Current 20 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 25 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 278 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 20A, V GS = 0V t rr Reverse Recovery Time 5 23 ns T J = 25 C, I F = 20A, V DD = 5V Q rr Reverse Recovery Charge 4 2 nc di/dt = 300A/µs Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 3.4 R JC (Top) Junction-to-Case 4 C/W R JA Junction-to-Ambient 44 R JA (<0s) Junction-to-Ambient
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFHM8326PbF 0 VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V 0 VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V 0 2.5V 0 2.5V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 T J = 50 C R DS(on), Drain-to-Source On Resistance.8 I D = 20A.6 V GS = 0V.4 0 T J = 25 C.2 V DS = 0V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 20A V DS = 24V V DS = 5V V DS = 6.0V 8.0 C iss C oss 4.0 C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) 0 0 IRFHM8326PbF OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C msec µsec 0 T J = 25 C 0 Limited by Source Bonding Tecnology V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 0msec Tc = 25 C Tj = 50 C DC Single Pulse Fig 8. Maximum Safe Operating Area 2.6 V DS, Drain-to-Source Voltage (V) Limited by package I D = 50µA.4 I D = 250µA I D =.0mA 20.0 I D =.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 0. Drain-to Source Breakdown Voltage 0 Thermal Response ( Z thjc ) C/W 0. D = SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 E AS, Single Pulse Avalanche Energy (mj) IRFHM8326PbF R DS(on), Drain-to -Source On Resistance (m ) I D = 20A I D TOP 4.7A 9.8A BOTTOM 20A T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart =25 C (Single Pulse) Avalanche Current (A) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 25 C. 0..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanche Current vs. Pulsewidth
6 Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T I AS V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform
7 PQFN 3.3 x 3.3 Outline C Package Details PQFN 3.3 x 3.3 Outline G Package Details # # For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-36: For more information on package inspection techniques, please refer to application note AN-54:
8 PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN ORIENTATION IN TAPE DIMENSION (MM) DIMENSION (INCH) CODE MIN MAX MIN MAX Ao Bo Ko P W W Qty 4000 Reel Diameter 3 Inches CODE Ao Bo Ko W P DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at
9 Qualification Information Qualification Level Consumer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 3.3mm x 3.3mm MSL (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.29mH, R G = 50, I AS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology
10 Revision History Date 6/6/204 Comments Updated schematic on page Updated package outline and part marking on page 7 Updated tape and reel on page 8 6/30/204 Remove SAWN package outline on page 7. 2/23/206 Updated datasheet with corporate template Updated package outline to reflect the PCN # (24-PCN30-Public) for Option C and Option G on page 7. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
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PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM
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PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationIRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY
PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
More informationR 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.
PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
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PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
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PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAbsolute Maximum Ratings (Per Die)
PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs
More informationIRHNJ63C krads(si) A SMD-0.5
PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationI D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
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Typical R DS(on) (Ω) V GS, Gate-to-Source Voltage (V) l RoHS compliant containing no lead or bromide l Low Profile (
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PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39
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PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
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DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
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PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
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PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
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PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
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PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
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PD-97896 IRFYB9130C, IRFYB9130CM POWER MOSFET THRU-HOLE (TO-257AA Low-Ohmic Tabless) 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D Eyelets IRFYB9130C 0.30-11.2A Ceramic
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PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*
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PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
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PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m
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PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
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PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
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PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*
More informationAbsolute Maximum Ratings for Each N-Channel Device
PD-967D IRHG7 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHG7 krads(si).6.a IRHG3 3 krads(si).7.a
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