IRFHM8326PbF. HEXFET Power MOSFET. V DSS 30 V V GS max ±20 V R DS(on) max 4.7 V GS = 10V)

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1 V DSS 30 V V GS max ±20 V R DS(on) max 4.7 (@ V GS = 0V) m (@ V GS = 4.5V) 6.7 Qg (typical) 20 nc I D (@T C (Bottom) = 25 C) 70 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for Buck Converters Features Benefits Low Thermal Resistance to PCB (<3.4 C/W) Enable better thermal dissipation Low Profile (<.05 mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8326PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8326TRPbF Absolute Maximum Ratings Notes through are on page 9 Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I T A = 25 C Continuous Drain Current, V 0V 9 I T A = 70 C Continuous Drain Current, V 0V 5 I T C(Bottom) = 25 C Continuous Drain Current, V 0V 70 I T C(Bottom) = C Continuous Drain Current, V 0V 44 I T C = 25 C Continuous Drain Current, V 0V (Source Bonding 25 Technology Limited) I DM Pulsed Drain Current 278 P A = 25 C Power Dissipation 2.8 P C(Bottom) = 25 C Power Dissipation 37 Linear Derating Factor W/ C T J Operating Junction and -55 to + 50 T STG Storage Temperature Range A W C

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 22 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 0V, I D = 20A m V GS = 4.5V, I D = 20A V GS(th) Gate Threshold Voltage V V V GS(th) Gate Threshold Voltage Coefficient -0 mv/ C DS = V GS, I D = 50µA I DSS Drain-to-Source Leakage Current.0 V DS = 24V, V GS = 0V µa 50 V DS = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 70 S V DS = 0V, I D = 20A Q g Total Gate Charge 39 nc V GS = 0V, V DS = 5V, I D = 20A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 4.8 V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge 2.6 nc V GS = 4.5V Q gd Gate-to-Drain Charge 6.5 I D = 20A Q godr Gate Charge Overdrive 6. Q sw Switch Charge (Q gs2 + Q gd ) 9. Q oss Output Charge nc V DS = 6V, V GS = 0V R G Gate Resistance.9 t d(on) Turn-On Delay Time 2 V DD = 5V, V GS = 4.5V t r Rise Time 35 ns I D = 20A t d(off) Turn-Off Delay Time 8 R G =.8 t f Fall Time 2 C iss Input Capacitance 2496 V GS = 0V C oss Output Capacitance 524 pf V DS = 0V C rss Reverse Transfer Capacitance 273 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. E AS Single Pulse Avalanche Energy 58 I AR Avalanche Current 20 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 25 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 278 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 20A, V GS = 0V t rr Reverse Recovery Time 5 23 ns T J = 25 C, I F = 20A, V DD = 5V Q rr Reverse Recovery Charge 4 2 nc di/dt = 300A/µs Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 3.4 R JC (Top) Junction-to-Case 4 C/W R JA Junction-to-Ambient 44 R JA (<0s) Junction-to-Ambient

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFHM8326PbF 0 VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V 0 VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V 0 2.5V 0 2.5V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 T J = 50 C R DS(on), Drain-to-Source On Resistance.8 I D = 20A.6 V GS = 0V.4 0 T J = 25 C.2 V DS = 0V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 20A V DS = 24V V DS = 5V V DS = 6.0V 8.0 C iss C oss 4.0 C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) 0 0 IRFHM8326PbF OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C msec µsec 0 T J = 25 C 0 Limited by Source Bonding Tecnology V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 0msec Tc = 25 C Tj = 50 C DC Single Pulse Fig 8. Maximum Safe Operating Area 2.6 V DS, Drain-to-Source Voltage (V) Limited by package I D = 50µA.4 I D = 250µA I D =.0mA 20.0 I D =.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 0. Drain-to Source Breakdown Voltage 0 Thermal Response ( Z thjc ) C/W 0. D = SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5 E AS, Single Pulse Avalanche Energy (mj) IRFHM8326PbF R DS(on), Drain-to -Source On Resistance (m ) I D = 20A I D TOP 4.7A 9.8A BOTTOM 20A T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart =25 C (Single Pulse) Avalanche Current (A) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 25 C. 0..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanche Current vs. Pulsewidth

6 Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T I AS V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform

7 PQFN 3.3 x 3.3 Outline C Package Details PQFN 3.3 x 3.3 Outline G Package Details # # For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-36: For more information on package inspection techniques, please refer to application note AN-54:

8 PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN ORIENTATION IN TAPE DIMENSION (MM) DIMENSION (INCH) CODE MIN MAX MIN MAX Ao Bo Ko P W W Qty 4000 Reel Diameter 3 Inches CODE Ao Bo Ko W P DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at

9 Qualification Information Qualification Level Consumer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 3.3mm x 3.3mm MSL (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.29mH, R G = 50, I AS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology

10 Revision History Date 6/6/204 Comments Updated schematic on page Updated package outline and part marking on page 7 Updated tape and reel on page 8 6/30/204 Remove SAWN package outline on page 7. 2/23/206 Updated datasheet with corporate template Updated package outline to reflect the PCN # (24-PCN30-Public) for Option C and Option G on page 7. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

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