AUTOMOTIVE GRADE. Tube 50 AUIRFS4115-7P Tape and Reel Left 800 AUIRFS4115-7TRL
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1 Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. V DSS R DS(on) typ. max. I D HEXFET Power MOSFET 5V m.8m 5A D 2 Pak 7 Pin G D S Gate Drain Source Base Part Number Package Type D 2 Pak 7 Pin Standard Pack Form Quantity Orderable Part Number Tube 5 Tape and Reel Left 8 AUIRFS45-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 5 I T C = C Continuous Drain Current, V V 74 A I DM Pulsed Drain Current 42 P C = 25 C Maximum Power Dissipation 38 W Linear Derating Factor 2.5 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy (Thermally Limited) 23 mj I AR Avalanche Current See Fig.4,5, 22a, 22b A E AR Repetitive Avalanche Energy mj dv/dt Peak Diode Recovery 32 V/ns Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 3 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.4 R JA Junction-to-Ambient 4 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at
2 = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 5 V V GS = V, I D = 25µA V (BR)DSS / Breakdown Voltage Temp. Coefficient.8 V/ C Reference to 25 C, I D = 3.5mA R DS(on) Static Drain-to-Source On-Resistance.8 m V GS = V, I D = 63A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA gfs Forward Trans conductance 93 S V DS = 5V, I D = 63A R G Gate Resistance 2. I DSS Drain-to-Source Leakage Current 2 V DS = 5V, V GS = V µa 25 V DS = 5V,V GS = V, =25 C Gate-to-Source Forward Leakage V GS = 2V I GSS na Gate-to-Source Reverse Leakage - V GS = -2V Dynamic Electrical = 25 C (unless otherwise specified) Q g Total Gate Charge 73 I D = 63A Q gs Gate-to-Source Charge 28 V DS = 75V nc Q gd Gate-to-Drain Charge 28 V GS = V Q sync Total Gate Charge Sync. (Q g - Q gd ) 45 t d(on) Turn-On Delay Time 8 V DD = 98V t r Rise Time 5 I D = 63A ns t d(off) Turn-Off Delay Time 37 R G = 2. t f Fall Time 23 V GS = V C iss Input Capacitance 532 V GS = V C oss Output Capacitance 49 V DS = 5V C rss Reverse Transfer Capacitance pf ƒ =.MHz C oss eff.(er) Effective Output Capacitance (Energy Related) 45 V GS = V, V DS = V to 2V C oss eff.(tr) Effective Output Capacitance (Time Related) 52 V GS = V, V DS = V to 2V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 4 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 42 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V = 25 C,I S = 63A,V GS = V t rr Reverse Recovery Time 82 = 25 C V DD = 3V ns 99 = 25 C I F = 63A, Q rr Reverse Recovery Charge 27 = 25 C di/dt = A/µs nc 385 = 25 C I RRM Reverse Recovery Current 6. A = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by max, starting = 25 C, L =.5mH, R G = 25, I AS = 63A, V GS =V. Part not recommended for use above this value. I SD 63A, di/dt 25A/µs, V DD V (BR)DSS, 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at approximately 9 C
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current ) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V. 5.V 6µs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 5.V 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics I D = 63A V GS = V = 75 C 2. = 25 C.5 V DS = 5V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics , Junction Temperature ( C) Fig. 4 Normalized On-Resistance vs. Temperature 8 6 V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss 6 2 I D = 63A V DS = 2V V DS = 75V V DS = 3V C oss 4 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) = 75 C µsec = 25 C msec V GS = V V SD, Source-to-Drain Voltage (V) msec Tc = 25 C Tj = 75 C Single Pulse DC.. V DS, Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area Id = 3.5mA T C, CaseTemperature ( C) , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature 4 3 Fig. Drain-to-Source Breakdown Voltage 8 I D TOP 4A 24A BOTTOM 63A V DS, Drain-to-Source Voltage (V) Starting, Junction Temperature ( C) Fig. Typical COSS Stored Energy Fig 2. Maximum Avalanche Energy vs. Drain Current
5 E AR, Avalanche Energy (mj) Thermal Response ( Z thjc ) D = R R R 2 R 2 R 3 R 3 J J Ci= i Ri Ci= i Ri Ri ( C/W) I (sec) R 4 R C C SINGLE PULSE ( THERMAL RESPONSE ). E-6 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Avalanche Current (A)..5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 4. Avalanche Current vs. Pulse width TOP Single Pulse BOTTOM % Duty Cycle I D = 63A Starting, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 8a, 8b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 3, 4). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av
6 Q RR - (nc) I RRM - (A) Q RR - (nc) V GS (th) Gate threshold Voltage (V) I RRM - (A) I D =.A I D =.ma I D = 25µA , Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature 5 2 I F = 42A V R = 27V = 25 C = 25 C di f / dt - (A / µs) Fig. 7 - Typical Recovery Current vs. dif/dt I F = 63A V R = 27V = 25 C = 25 C di f / dt - (A / µs) 2 8 I F = 42A V R = 27V 4 = 25 C = 25 C di f / dt - (A / µs) Fig. 8 - Typical Recovery Current vs. dif/dt Fig. 9 - Typical Stored Charge vs. dif/dt I F = 63A V R = 27V 4 = 25 C = 25 C di f / dt - (A / µs) Fig. 2 - Typical Stored Charge vs. dif/dt
7 Fig 2. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G D.U.T + I AS - V DD A 2V tp. Fig 22a. Unclamped Inductive Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
8 D 2 Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak - 7 Pin Part Marking Information Part Number IR Logo AUFS45-7P YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at
9 D 2 Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at
10 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D 2 -Pak 7 Pin MSL Class M3 (+/- 4V) AEC-Q-2 Class H2 (+/- 4V) AEC-Q- Class C5 (+/- 2V) AEC-Q-5 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 2/4/25 Corrected ordering table on page. Comments Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 25 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.
PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationV DSS V GS R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S(on) (m ) IRF6648PbF IRF6648TRPbF RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 2V outputs Low Conduction
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationIRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A
PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
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PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationLower Conduction Losses
IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 27
PD 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A
PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More information40V V DSS. R DS(on) typ. I D (Silicon Limited) I D (Package Limited) 409Ac 195A. HEXFET Power MOSFET
R DS(on), Drainto Source On Resistance (m ) I D, Drain Current (A) PD 97782A Applications StrongIRFET l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge
More informationR 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
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