40V V DSS. R DS(on) typ. I D (Silicon Limited) I D (Package Limited) 409Ac 195A. HEXFET Power MOSFET
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1 R DS(on), Drainto Source On Resistance (m ) I D, Drain Current (A) PD 97782A Applications StrongIRFET l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge and fullbridge topologies l Synchronous rectifier applications l Resonant mode power supplies l ORing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters G D S V DSS HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 40V.0m.3m 409Ac 95A D Benefits l l l l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability LeadFree S D G TO220AB G D S Gate Drain Source Ordering Information Base Part Number Package Type Standard Pack Complete Part Number Form Quantity TO220 Tube I D = A 400 Limited By Package T J = 25 C V GS, Gate to Source Voltage (V) Fig. Typical OnResistance vs. Gate Voltage T C, Case Temperature ( C) Fig 2. Maximum Drain Current vs. Case Temperature 05/22/2
2 Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 409c I T C = C Continuous Drain Current, V V (Silicon Limited) 289c I T C = 25 C Continuous Drain Current, V V (Wire Bond Limited) 95 A I DM Pulsed Drain Current d 524 P C = 25 C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/ C V GS GatetoSource Voltage ± 20 V T J Operating Junction and 55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) 300 C lbfx in (.Nx m) Mounting torque, 632 or M3 screw Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 760 mj E AS (tested) Single Pulse Avalanche Energy Tested Value k 360 I AR Avalanche Currentd See Fig. 4, 5, 22a, 22b A E AR Repetitive Avalanche Energy d mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC JunctiontoCase j 0.40 R CS CasetoSink, Flat Greased Surface 0.50 R JA JunctiontoAmbient 62 C/W (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 40 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.04 V/ C R DS(on) Static DraintoSource OnResistance V GS(th) Gate Threshold Voltage V I DSS DraintoSource Leakage Current.0 μa 50 I GSS GatetoSource Forward Leakage na GatetoSource Reverse Leakage R G Internal Gate Resistance 2. Conditions V GS = 0V, I D = 250μA Reference to 25 C, I D =.0mAd.0.3 m V GS = V, I D = A g.2 V GS = 6.0V, I D = 50A g V DS = V GS, I D = 250μA V DS = 40V, V GS = 0V V DS = 40V, V GS = 0V, T J = 25 C V GS = 20V V GS = 20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 95A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN40) Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting, L = 0.5mH R G = 50, I AS = A, V GS =V. I SD A, di/dt 990A/μs, V DD V (BR)DSS, T J 75 C. Pulse width 400μs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. ˆ R is measured at T J approximately 90 C.. This value determined from sample failure population, starting, L= 0.5mH, R G = 50, I AS = A, V GS =V. 2
3 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 50 S Q g Total Gate Charge nc Q gs GatetoSource Charge 77 Q gd GatetoDrain ("Miller") Charge 98 Q sync Total Gate Charge Sync. (Q g Q gd ) 202 t d(on) TurnOn Delay Time 32 ns t r Rise Time 5 t d(off) TurnOff Delay Time 60 t f Fall Time C iss Input Capacitance 4240 pf C oss Output Capacitance 230 C rss Reverse Transfer Capacitance 460 C oss eff. (ER) Effective Output Capacitance (Energy Related) i 2605 C oss eff. (TR) Effective Output Capacitance (Time Related)h 2920 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 394c A Conditions V DS = V, I D = A I D = A V DS =20V V GS = V g I D = A, V DS =0V, V GS = V V DD = 20V I D = 30A R G = 2.7 V GS = V g V GS = 0V V DS = 25V ƒ =.0 MHz V GS = 0V, V DS = 0V to 32V i V GS = 0V, V DS = 0V to 32V h Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 576 A integral reverse G (Body Diode)d pn junction diode. S V SD Diode Forward Voltage V, I S = A, V GS = 0V g dv/dt Peak Diode Recovery f 2.7 V/ns T J = 75 C, I S = A, V DS = 40V t rr Reverse Recovery Time 52 ns V R = 34V, 52 T J = 25 C I F = A Q rr Reverse Recovery Charge 97 nc di/dt = A/μs g 97 T J = 25 C I RRM Reverse Recovery Current 2.3 A t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D 3
4 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 4.8V BOTTOM 4.5V 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 4.8V BOTTOM 4.5V 4.5V 4.5V 60μs PULSE WIDTH Tj = 25 C 0. V DS, DraintoSource Voltage (V) Fig 3. Typical Output Characteristics 60μs PULSE WIDTH Tj = 75 C 0. V DS, DraintoSource Voltage (V) Fig 4. Typical Output Characteristics 0.8 I D = A V GS = V.6.4 T J = 75 C.2.0 V DS = 25V 60μs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 5. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 6. Normalized OnResistance vs. Temperature 000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = A V DS = 32V V DS = 20V 00 C iss C oss C rss V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 7. Typical Capacitance vs. DraintoSource Voltage Fig 8. Typical Gate Charge vs. GatetoSource Voltage 4
5 R DS (on), Drainto Source On Resistance ( m ) V (BR)DSS, DraintoSource Breakdown Voltage (V) Energy (μj) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C 0 msec μsec Limited by package msec V GS = 0V V SD, SourcetoDrain Voltage (V) Fig 9. Typical SourceDrain Diode Forward Voltage Id =.0mA Tc = 25 C DC Tj = 75 C Single Pulse V DS, DraintoSource Voltage (V) Fig. Maximum Safe Operating Area 2.5 V DS = 0V to 32V T J, Temperature ( C ) Fig. DraintoSource Breakdown Voltage V DS, DraintoSource Voltage (V) Fig 2. Typical C OSS Stored Energy V GS = 5.5V V GS = 6.0V V GS = 7.0V V GS = 8.0V V GS =V I D, Drain Current (A) Fig 3. Typical OnResistance vs. Drain Current 5
6 E AR, Avalanche Energy (mj) Avalanche Current (A) Thermal Response ( Z thjc ) C/W D = E006 E t, Rectangular Pulse Duration (sec) 0 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig 4. Maximum Effective Transient Thermal Impedance, JunctiontoCase Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 50 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 50 C..0E06.0E05.0E04.0E03.0E02.0E0 tav (sec) Fig 5. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.0% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 6. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 6
7 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) I F = 60A 3.5 V R = 34V T J = 25 C 2.5 I D = 250μA I D =.0mA I D =.0A T J, Temperature ( C ) di F /dt (A/μs) Fig 7. Threshold Voltage vs. Temperature Fig. 8 Typical Recovery Current vs. di f /dt 2 8 I F = A V R = 34V T J = 25 C I F = 60A V R = 34V T J = 25 C di F /dt (A/μs) Fig. 9 Typical Recovery Current vs. di f /dt di F /dt (A/μs) Fig. 20 Typical Stored Charge vs. di f /dt I F = A V R = 34V T J = 25 C di F /dt (A/μs) Fig. 2 Typical Stored Charge vs. di f /dt 7
8 D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test ReApplied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 22. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T IAS 0.0 V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 90% R G V DD VV GS Pulse Width µs Duty Factor % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 50K Vgs 2V.2 F.3 F V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 8
9 TO220AB Package Outline Dimensions are shown in millimeters (inches) TO220AB Part Marking Information (;$03/( 7,6,6$,5) /27&2'( $66(0%/('2::,7($66(0%/</,(& RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$5780%(5 '$7(&2'( <($5 :((. /,(& TO220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at Qualification information Qualification level RoHS compliant Industrial (per JEDEC JESD47F guidelines) TO220 Not applicable Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 05/
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More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
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PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
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Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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Power MOSFET IRFP23N5L, SiHFP23N5L PRODUCT SUMMARY (V) 5 R DS(on) (Ω) V GS = V.9 Q g (Max.) (nc) 5 Q gs (nc) 44 Q gd (nc) 72 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free
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