IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
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1 PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International Rectifier HiRel family of products. IR HiRel Fifth Generation Power MOSFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provide the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suitable for applications such as switching power supplies, motor established advantages of MOSFETs such as voltage controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features Logic Level Gate Drive Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Package Light Weight Surface Mount Absolute Maximum Ratings Parameter I V GS = -V, T C = 25 C Continuous Drain Current - I V GS = -V, T C = C Continuous Drain Current -7. I DM Pulsed Drain Current -44 P T C = 25 C Maximum Power Dissipation 5 W Units Linear Derating Factor.4 W/ C V GS Gate-to-Source Voltage ±2 V E AS Single Pulse Avalanche Energy 57 mj I AR Avalanche Current - A E AR Repetitive Avalanche Energy 5. mj dv/dt Peak Diode Recovery dv/dt -.7 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range Lead Temperature 3 (for 5s) Weight. (Typical) g A C For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc.
2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage -2 V V GS = V, I D = -25µA BV DSS / T J Breakdown Voltage Temp. Coefficient -.4 V/ C Reference to 25 C, I D = -.ma R DS(on) Static Drain-to-Source On-Resistance.4 V GS = -4.5V, I D = -A.7 V GS = -2.7V, I D = -7.A V GS(th) Gate Threshold Voltage -.7 V V DS = V GS, I D = -25µA Gfs Forward Transconductance 9. S V DS = -5V, I D = -3.2A I DSS -. V DS = -6V, V GS = V Zero Gate Voltage Drain Current µa -25 V DS = -6V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward - V GS = -2V na Gate-to-Source Leakage Reverse V GS = 2V Q G Total Gate Charge 5 I D = -3.2A Q GS Gate-to-Source Charge 5.5 nc V DS = -6V Q GD Gate-to-Drain ( Miller ) Charge 2 V GS = -4.5V t d(on) Turn-On Delay Time 35 V DD = -V tr Rise Time 5 I D = -3.2A ns t d(off) Turn-Off Delay Time 72 R G = 6. t f Fall Time 9 V GS = -4.5V Ls +L D Total Inductance 4. nh Measured from center of Drain pad to center of Source pad C iss Input Capacitance 45 V GS = V C oss Output Capacitance 83 pf V DS = -5V C rss Reverse Transfer Capacitance 43 ƒ =.MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) - I SM Pulsed Source Current (Body Diode) -44 V SD Diode Forward Voltage -. V T J =25 C, I S =-3.2A, V GS =V t rr Reverse Recovery Time 8 ns T J =25 C, I F = -3.2A,V DD -2V Q rr Reverse Recovery Charge nc di/dt = -A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) A Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case 2.5 C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = -5V, starting T J = 25 C, L = 2.6mH, Peak I L = -A, V GS = -V I SD -A, di/dt -84A/µs, V DD -2V, T J 5 C Pulse width 3 µs; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc.
3 -I D, Drain-to-Source Current (A) Fig. Typical Output Characteristics T J = 25 C T J = 5 C V DS = -5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics R DS(on), Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 2. I D = -A.5..5 V GS = -4.5V T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature C, Capacitance (pf) VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd -V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -V GS, Gate-to-Source Voltage (V) I = D -3.2A V DS =-6V V DS =-V V DS =-4V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 3 International Rectifier HiRel Products, Inc.
4 -I D, Drain-to-Source Current (A) IRL5NJ744 OPERATION IN THIS AREA LIMITED BY R DS (on) -I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD,Source-to-Drain Voltage (V) Tc = 25 C Tj = 5 C Single Pulse ms ms -V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area -I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D -5.A -7.A -A Starting T, Junction Temperature ( J C) Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ). D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. PDM t t2
5 Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms 5 International Rectifier HiRel Products, Inc.
6 Case Outline and Dimensions SMD-.5 N. Sepulveda Boulevard, El Segundo, California 9245, USA Tel: + (3) Junction Avenue, San Jose, California 9534, USA Tel: + (48) Crawford Street, Leominster, Massachusetts 453, USA Tel: + (978) Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc.
7 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 International Rectifier HiRel Products, Inc.
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More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS4115-7P Tape and Reel Left 800 AUIRFS4115-7TRL
Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
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PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS3004-7P Tape and Reel Left 800 AUIRFS3004-7PTRL
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω
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PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z Application Automatic Voltage Regulator (AVR) Solenoid Injection Body Control Low Power Automotive Applications V DSS HEXFET Power MOSFET 0V R DS(on) typ. 22.5m I
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PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
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l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
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PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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