POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
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1 PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight Absolute Maximum Ratings Parameter VGS = 2V, TC = 25 C Continuous Drain Current 3 VGS = 2V, TC = C Continuous Drain Current 9 IDM Pulsed Drain Current À 24 Units TC = 25 C Max. Power Dissipation 5 W Linear Derating Factor.2 W/ C VGS Gate-to-Source Voltage ±2 V EAS Single Pulse Avalanche Energy Á 3 mj IAR Avalanche Current À 3 A EAR Repetitive Avalanche Energy À 5 mj dv/dt Peak Diode Recovery dv/dt  7. V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range C Pckg. Mounting Surface Temp. 3 (for 5s) Weight 2.6 (Typical) g A For footnotes refer to the last page 2/2/
2 IRHN5725SE Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 2 V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.23 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.6 Ω VGS = 2V, ID = 9A Resistance à VGS(th) Gate Threshold Voltage V VDS = VGS, ID =.ma gfs Forward Transconductance 8 S VDS > 5V, IDS = 9A à IDSS Zero Gate Voltage Drain Current VDS= 6V,VGS=V µa 25 VDS = 6V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward VGS = 2V na IGSS Gate-to-Source Leakage Reverse - VGS = -2V Qg Total Gate Charge 32 VGS =2V, ID = 3A Qgs Gate-to-Source Charge 45 nc VDS = V Qgd Gate-to-Drain ( Miller ) Charge 6 td(on) Turn-On Delay Time 35 VDD = V, ID = 3A, tr Rise Time 25 VGS =2V, RG = 2.35 Ω ns td(off) Turn-Off Delay Time 8 tf Fall Time 8 LS + LD Total Inductance 4. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 386 VGS = V, VDS = 25V Coss Output Capacitance 628 pf f =.MHz Crss Reverse Transfer Capacitance 3 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 3 ISM Pulse Source Current (Body Diode) À 24 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS = 3A, VGS = V à trr Reverse Recovery Time 45 ns Tj = 25 C, IF = 3A, di/dt A/µs QRR Reverse Recovery Charge 6. µc VDD 25V à ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case.83 C/W RthJ-PCB Junction-to-PC board 6.6 soldered to a 2 square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2
3 Radiation Characteristics IRHN5725SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage 2 V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS =6V, V GS =V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).6 Ω VGS = 2V, I D = 9A R DS(on) Static Drain-to-Source On-State Resistance (SMD-).6 Ω VGS = 2V, I D = 9A V SD Diode Forward Voltage.2 V VGS = V, I D = 3A International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) = V -5V -V -5V -2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% ± 5% 33 ± 7.5% 3 ± % ± 5% 35 ± % 28 ± 7.5% Bias VDS (V) LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% -5 - Bias VGS (V) -5-2 For footnotes refer to the last page Fig a. Single Event Effect, Safe Operating Area 3
4 IRHN5725SE I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V 2µs PULSE WIDTH T J = 25 C.. V DS, Drain-to-Source Voltage (V) 2µs PULSE WIDTH T J = 5 C.. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 5 C T J = 25 C V DS= 5 5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 3A V GS = 2V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4
5 I D, Drain-to-Source Current (A) IRHN5725SE C, Capacitance (pf) 7 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED 6 Crss = Cgd Coss = Cds + Cgd 5 C iss C oss C rss V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) I = D 3A V DS = 6V V DS = V V DS = 4V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD,Source-to-Drain Voltage (V). OPERATION IN THIS AREA LIMITED BY R DS (on) Tc = 25 C Tj = 5 C Single Pulse µs ms ms DC V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 5
6 IRHN5725SE 35 V DS R D I D, Drain Current (A) Fig a. Switching Time Test Circuit V DS 9% R G V GS V GS Pulse Width µs Duty Factor. % D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms D =.5 Thermal Response (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6
7 IRHN5725SE R G V DS 2V V GS tp I AS Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T..Ω 5V DRIVER V (BR)DSS + - V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 4A 9.6A BOTTOM 3A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 5KΩ Q G 2V.2µF.3µF 2 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 7
8 IRHN5725SE Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 5V, starting TJ = 25 C, L=.62 mh Peak IL = 3A, VGS = 2V Â ISD 3A, di/dt 46A/µs, VDD 2V, TJ 5 C Ã Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. 6 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Case Outline and Dimensions SMD- PAD ASSIGNMENTS = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 2/2 8
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PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
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PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563
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PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3
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PD-967D IRHG7 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHG7 krads(si).6.a IRHG3 3 krads(si).7.a
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PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
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PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
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PD-90720F IRHN7150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7150
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PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
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PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
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PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
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PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
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PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
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PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
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PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM
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PD-97887 IRHLG7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG7S7 krads(si).33.8a IRHLG7S3
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PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
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PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*
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Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
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PD-90673C IRHM7450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 500V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450
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PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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PD-90674G IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 200V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
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FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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