IRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A
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1 PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS A* Description Seventh Generation HEXFET power MOSFETs from IR HiRel utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features Low R DS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Low-Ohmic TO-254AA Absolute Maximum Ratings Parameter I V GS = V, T C = 25 C Continuous Drain Current 45* I V GS = V, T C = C Continuous Drain Current 45* I DM Pulsed Drain Current 8 P C = 25 C Maximum Power Dissipation 28 W Units Linear Derating Factor.67 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 76 mj I AR Avalanche Current 45 A E AR Repetitive Avalanche Energy 2.8 mj dv/dt Peak Diode Recovery dv/dt 2.2 V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range Lead Temperature 3 (.63 in. /.6 mm from case for s) Weight 9.3 (Typical) g A C * Current is limited by package For Footnotes refer to the page
2 IRF7MS297 Electrical T j = 25 C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 75 V V GS = V, I D = 25µA BV DSS / T J Breakdown Voltage Temp. Coefficient.87 V/ C Reference to 25 C, I D =.ma Static Drain-to-Source On-State R DS(on).55 V GS = V, I D = 45A Resistance V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA Gfs Forward Transconductance 7 S V DS = 5V, I D = 45A I DSS Zero Gate Voltage Drain Current 2 V DS = 75V, V GS = V µa 25 V DS = 6V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 375 I D = 45A Q GS Gate-to-Source Charge 6 nc V DS = 6V Q GD Gate-to-Drain ( Miller ) Charge 5 V GS = V t d(on) Turn-On Delay Time 4 V DD = 38V tr Rise Time 35 I D = 45A ns t d(off) Turn-Off Delay Time 75 R G =.2 t f Fall Time 75 V GS = V Ls +L D Total Inductance 6.8 nh Measured from Drain lead (6mm /.25 in from package) to Source lead (6mm/.25 in from package) with Source wire internally bonded from Source pin to Drain pad C iss Input Capacitance 26 V GS = V C oss Output Capacitance 228 pf V DS = 25V C rss Reverse Transfer Capacitance 65 ƒ =.MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 45* I SM Pulsed Source Current (Body Diode) 8 A V SD Diode Forward Voltage. V T J = 25 C,I S = 45A, V GS = V t rr Reverse Recovery Time 75 ns T J = 25 C, I F = 45A, V DD 25V Q rr Reverse Recovery Charge 85 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) * Current is limited by package Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.6 R CS Case -to-sink.2 C/W R JA Junction-to-Ambient (Typical socket mount) 48 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 25V, starting T J = 25 C, L =.75mH, Peak I L = 45A, V GS = V, R G = 25 I SD 45A, di/dt 38A/µs, V DD 75V, T J 5 C Pulse width 3 µs; Duty Cycle 2%
3 I D, Drain-to-Source Current ( ) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF7MS297 VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 2 s PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 2 s PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 5 C T J = 25 C V DS = 25V 2 s PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 45A V GS = V T J, Junction Temperature( C) C, Capacitance (pf) Fig 3. Typical Transfer Characteristics 2 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 6 Coss = Cds + Cgd C iss 2 8 C oss 4 C rss V DS, Drain-to-Source Voltage (V) Fig 4. Normalized On-Resistance Vs. Temperature V GS, Gate-to-Source Voltage (V) I = D 45A V DS= 6V V DS= 37V V DS= 5V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
4 I SD, Reverse Drain Current ( ) I D, Drain-to-Source Current (A) IRF7MS297 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 5 C T J = 25 C µs ms V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 5 C ms Single Pulse. V DS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area I D, Drain Current (A) LIMITED BY PACKAGE T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature E AS, Single Pulse Avalanche Energy (mj) I D TOP 2A 28.5A BOTTOM 45A Starting T, Junction Temperature ( J C) Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case t t2
5 IRF7MS297 V (BR)DSS tp I AS Fig 2a. Unclamped Inductive Test Circuit Fig 2b. Unclamped Inductive Waveforms Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms
6 IRF7MS297 Case Outline and Dimensions TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.6 [.26] 6.32 [.249].2 [.5].27 [.5].2 [.4] 7.4 [.685] 6.89 [.665] 2.32 [.8] 2.7 [.79] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.57] 2.95 [.5].84 [.33] MAX. 3.8 [.5] 2X 3X.4 [.45].89 [.35].36 [.4] B A 3.8 [.5] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-95 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) IR HiRel Leominster: 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) IR HiRel San Jose: 252 Junction Avenue, San Jose, California 9534, USA Tel: (48) Data and specifications subject to change without notice
7 IRF7MS297 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office
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More informationAUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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Features dvanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS
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I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z Application Automatic Voltage Regulator (AVR) Solenoid Injection Body Control Low Power Automotive Applications V DSS HEXFET Power MOSFET 0V R DS(on) typ. 22.5m I
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
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Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant
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PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
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SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
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PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
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PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
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lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD - 9596A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A
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PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
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