AUIRFR4105Z AUIRFU4105Z
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1 Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE V DSS AUIRFR45Z AUIRFU45Z 55V R DS(on) max. 24.5m I D HEXFET Power MOSFET 3A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G S D-Pak AUIRFR45Z D S D G I-Pak AUIRFU45Z G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU45Z I-Pak Tube 75 AUIRFU45Z Tube 75 AUIRFR45Z AUIRFR45Z D-Pak Tape and Reel Left 3 AUIRFR45ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 3 I T C = C Continuous Drain Current, V V (Silicon Limited) 21 A I DM Pulsed Drain Current 12 P C = 25 C Maximum Power Dissipation 48 W Linear Derating Factor.32 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy (Thermally Limited) 29 E AS (Tested) Single Pulse Avalanche Energy Tested Value 46 mj I AR Avalanche Current See Fig.15,16, 12a, 12b A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 3 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 3.12 R JA Junction-to-Ambient ( PCB Mount) 5 C/W R JA Junction-to-Ambient 1 HEXFET is a registered trademark of Infineon. *Qualification standards can be found at
2 T J = 25 C (unless otherwise specified) AUIRFR/U45Z Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.53 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance m V GS = V, I D = 18A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA gfs Forward Trans conductance 16 S V DS = 15V, I D = 18A I DSS Drain-to-Source Leakage Current 2 V µa DS = 55V, V GS = V 25 V DS = 55V,V GS = V,T J =125 C Gate-to-Source Forward Leakage 2 V I GSS na GS = 2V Gate-to-Source Reverse Leakage -2 V GS = -2V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge I D = 18A Q gs Gate-to-Source Charge 5.3 nc V DS = 44V Q gd Gate-to-Drain Charge 7. V GS = V t d(on) Turn-On Delay Time V DD = 28V t r Rise Time 4 I D = 18A ns t d(off) Turn-Off Delay Time 26 R G = 24.5 t f Fall Time 24 V GS = V Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 74 V GS = V C oss Output Capacitance 14 V DS = 25V C rss Reverse Transfer Capacitance 74 ƒ = 1.MHz pf C oss Output Capacitance 45 V GS = V, V DS = 1.V ƒ = 1.MHz C oss Output Capacitance 1 V GS = V, V DS = 44V ƒ = 1.MHz C oss eff. Effective Output Capacitance 18 V GS = V, V DS = V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 3 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 12 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C,I S = 18A, V GS = V t rr Reverse Recovery Time ns T J = 25 C,I F = 18A, V DD = 28V Q rr Reverse Recovery Charge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by T Jmax, starting T J = 25 C, L =.18mH, R G = 25, I AS = 18A, V GS =V. Part not recommended for use above this value. Pulse width 1.ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting T J = 25 C, L =.18mH, R G = 25, I AS = 18A, V GS =V. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 9 C
3 I D, Drain-to-Source Current ) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) I D, Drain-to-Source Current (A) AUIRFR/U45Z VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V V 6µs PULSE WIDTH Tj = 25 C.1 1 V DS, Drain-to-Source Voltage (V) 4.5V 6µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 3 T J = 175 C 25 T J = 175 C 2 15 T J = 25 C T J = 25 C 1 V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) 5 V DS = 8.V 38µs PULSE WIDTH I D, Drain-to-Source Current (A) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance Vs. Drain Current
4 C, Capacitance (pf) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) AUIRFR/U45Z 12 8 V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss I D = 18A V DS = 44V VDS= 28V VDS= 11V Coss Crss 1 4 FOR TEST CIRCUIT SEE FIGURE V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage. OPERATION IN THIS AREA LIMITED BY R DS (on). T J = 175 C. µsec T 1. J = 25 C V GS = V V SD, Source-toDrain Voltage (V) 1.1 Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 V DS, Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
5 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) AUIRFR/U45Z I D = 18A V GS = V T J, Junction Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thjc ) D = R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci= i Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-6 1E t 1, Rectangular Pulse Duration (sec) C C Ri ( C/W) i (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 V GS(th) Gate threshold Voltage (V) AUIRFR/U45Z 15V V DS R G 2V tp L D.U.T I AS.1 DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 2.A 3.5A BOTTOM 18A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS Starting T J, Junction Temperature ( C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 4.5 Vds Vgs Id Vgs(th) I D = 25µA 3. Qgs1 Qgs2 Qgd Qgodr 2.5 Fig 13a. Gate Charge Waveform T J, Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit
7 E AR, Avalanche Energy (mj) AUIRFR/U45Z Duty Cycle = Single Pulse Avalanche Current (A).1.5. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves, Figures 15, 16: TOP Single Pulse BOTTOM 1% Duty Cycle I D = 18A Starting T J, Junction Temperature ( C) (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] Fig 16. Maximum Avalanche Energy Vs. Temperature E AS (AR) = P D (ave) t av
8 AUIRFR/U45Z Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
9 AUIRFR/U45Z D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFR45Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at
10 AUIRFR/U45Z I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number IR Logo AUFU45Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at
11 AUIRFR/U45Z D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Note: For the most current drawing please refer to IR website at
12 AUIRFR/U45Z Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M2 (+/-2V) AEC-Q1-2 Class H1A (+/-5V) AEC-Q1-1 Class C5 (+/-1125V) AEC-Q1-5 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 12/1/215 Corrected ordering table on page 1. Comments Published by Infineon Technologies AG München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
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PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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Typical R S(on) (m ) IRF6648PbF IRF6648TRPbF RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 2V outputs Low Conduction
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
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