V DSS V GS R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)

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1 Typical R S(on) (m ) IRF6648PbF IRF6648TRPbF RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 2V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) ual Sided Cooling Compatible Compatible with existing Surface Mount Techniques irectfet Power MOSFET Typical values (unless otherwise specified) V SS V GS R S(on) 60V min ±20V max V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 36nC 4nC 2.7nC 37nC nc 4.0V Applicable irectfet Outline and Substrate Outline (see p.7,8 for details) MN irectfet ISOMETRIC SH SJ SP MZ MN escription The IRF6648PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-2Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF6648TRPbF irectfet Medium Can Tape and Reel 4800 IRF6648TRPbF Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 60 V GS Gate-to-Source Voltage ±20 V T C = 25 C Continuous rain Current, V V (Silicon Limited) 86 T C = 70 C Continuous rain Current, V V (Silicon Limited) 69 A I M Pulsed rain Current 260 E AS Single Pulse Avalanche Energy 47 mj I AR Avalanche Current 34 A I = 7A 30 V GS, Gate-to-Source Voltage (V) I = 7A V S = 48V V S = 30V T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Q G, Total Gate Charge (nc) Fig. Typical On-Resistance vs. Gate Voltage Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. Surface mounted on in. square Cu board, steady state. Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.082mH, R G = 25, I AS = 34A

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 60 V V GS = 0V, I = 250µA V SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 c, I = ma R S(on) Static rain-to-source On-Resistance m V GS = V, I = 7A V GS(th) Gate Threshold Voltage V V S = V GS, I = 50µA V GS(th) / T J Gate Threshold Voltage Temp. Coefficient - mv/ C 20 V S = 60 V, V GS = 0V I SS rain-to-source Leakage Current µa 250 V S = 48 V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage 0 V GS = 20V I GSS na Gate-to-Source Reverse Leakage -0 V GS = -20V gfs Forward Transconductance 3 S V S = V, I = 7A Q g Total Gate Charge Q gs Pre Vth Gate-to-Source Charge 7.5 V S = 30V Q gs2 Post Vth Gate-to-Source Charge 2.7 V GS = V nc Q gd Gate-to-rain Charge 4 2 I = 7A Q godr Gate Charge Overdrive 2 See Fig 5 Q sw Switch Charge (Q gs2 + Q gd) 7 Q oss Output Charge 2 nc V S = 6V, V GS = 0V R G(Internal) Gate Resistance.0 t d(on) Turn-On elay Time 6 V = 30V, V GS = V t r Rise Time 29 I = 7A ns t d(off) Turn-Off elay Time 28 R G = 6.2 t f Fall Time 3 See Fig 6 & 7 C iss Input Capacitance 220 V GS = 0V C oss Output Capacitance 600 V S = 25V C rss Reverse Transfer Capacitance 70 pf ƒ =.0MHz C oss Output Capacitance 2450 V GS = 0V, V S =.0V, f =.0MHz C oss Output Capacitance 440 V GS = 0V, V S = 48V, f =.0MHz iode Characteristics I S I SM Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 8 (Body iode) showing the A Pulsed Source Current integral reverse 260 (Body iode) p-n junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 7A, V GS = 0V t rr Reverse Recovery Time 3 47 ns T J = 25 C, I F = 7A,V = 30V Q rr Reverse Recovery Charge nc di/dt = 0A/µs See Fig. 8 G S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%

3 Thermal Response ( Z thjc ) IRF6648TRPbF Absolute Maximum Ratings Symbol Parameter Max. Units A = 25 C Power issipation 2.8 A = 70 C Power issipation.8 W C = 25 C Power issipation 89 T P Peak Soldering Temperature 270 T J Operating Junction and -40 to + 50 Storage Temperature Range C T STG Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient 45 R JA Junction-to-Ambient 2.5 C/W R JC Junction-to-Can.4 R JA-PCB Junction-to-PCB Mounted.0 Linear erating Factor W/ C = R R R 2 R 2 R 3 R 3 J J Ci= i Ri Ci= i Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: uty Factor = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse uration (sec) C C Ri ( C/W) i (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Notes: Surface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R is measured at T J of approximately 90 C. Surface mounted on in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)

4 C, Capacitance (pf) Typical R S (on) ( m ) I, rain-to-source Current (A) Typical R S(on) (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRF6648TRPbF 00 0 VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 00 0 VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WITH Tj = 25 C 0. V S, rain-to-source Voltage (V) 60µs PULSE WITH Tj = 50 C 0. V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics 00 V S = V 60µs PULSE WITH 2.0 I = 86A V GS = V 0 T J = 50 C T J = 25 C T J = -40 C V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature 000 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd C iss Vgs = 7.0V Vgs = 8.0V Vgs = V Vgs = 5V T J = 25 C 00 C oss 5 C rss V S, rain-to-source Voltage (V) Fig 8. Typical Capacitance vs. rain-to-source Voltage I, rain Current (A) Fig 9. Normalized Typical On-Resistance vs. rain Current and Gate Voltage

5 I, Typical V GS(th), rain Current (A) Gate threshold Voltage (V) I S, Reverse rain Current (A) I, rain-to-source Current (A) IRF6648TRPbF 00 0 T J = 50 C T J = 25 C T J = -40 C 00 0 OPERATION IN THIS AREA LIMITE BY R S (on) msec 0µsec msec V GS = 0V V S, Source-to-rain Voltage (V) 0. Tc = 25 C Tj = 50 C Single Pulse 0 0 V S, rain-to-source Voltage (V) Fig. Typical Source-rain iode Forward Voltage Fig. Maximum Safe Operating Area I = 50µA I = 250µA I =.0mA I =.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 2. Maximum rain Current vs. Case Temperature Fig 3. Typical Threshold Voltage vs. Junction Temperature E AS, Single Pulse Avalanche Energy (mj) I TOP 2A 8A BOTTOM 34A Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. rain Current

6 Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms

7 Fig 8. iode Reverse Recovery Test Circuit for HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MN Outline (Medium Size Can, N-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G=GATE =RAIN S=SOURCE G S S

8 irectfet Outline imension, MN Outline (Medium Size Can, N-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE A B C E F G H J K L M R P IMENSIONS METRIC IMPERIAL irectfet Part Marking

9 irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 00 parts on 7" reel, order IRF6648TRPBF COE A B C E F G H REEL IMENSIONS STANAR OPTION (QTY 4800) TR OPTION (QTY 00) METRIC IMPERIAL METRIC IMPERIAL LOAE TAPE FEE IRECTION COE A B C E F G H IMENSIONS METRIC IMPERIAL

10 Qualification Information Qualification Level Consumer Moisture Sensitivity Level RoHS Compliant irectfet Medium Can MSL (per JEEC J-ST-020 ) Yes Applicable version of JEEC standard at the time of product release. Revision History ate Comment 04/06/207 Changed datasheet with Infineon logo - all pages. Added Orderable table on page. Corrected PCB layout on page 7 Added Qualification table on page. Added disclaimer on last page. Published by Infineon Technologies AG 8726 München, Germany Infineon Technologies AG 205 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury