AUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8

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1 UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally mall Footprint and Low Profile High Power ensity Low Parasitic Parameters ual ided Cooling 75 C Operating Temperature Repetitive valanche Capability for Robustness and Reliability Lead free, RoH and Halogen free utomotive Qualified * V (BR) R (on) typ. max. I (ilicon Limited) Q g (typical) utomotive irectfet Power MOFET V 3.5m 4.4m 4 8nC pplicable irectfet Base Part Number Outline and ubstrate Outline B C M2 M4 L4 L6 L8 Package Type tandard Pack Form Quantity irectfet IOMETRIC escription The combines the latest utomotive HEXFET Power MOFET ilicon technology with the advanced irectfettm packaging to achieve the lowest on-state resistance in a package that has the footprint of a Pak (TO-252) and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOFET is designed for applications where efficiency and power density are essential. The advanced irectfet packaging platform coupled with the latest silicon technology allows the to offer substantial system level savings and performance improvement specifically in motor drive, high frequency C-C and other heavy load applications on ICE, HEV and EV platforms. This MOFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. dditional features of this MOFET are 75 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOFET a highly efficient, robust and reliable device for high current automotive applications.. Orderable Part Number UIRF7669L2 irectfet Large Can Tape and Reel 4000 bsolute Maximum Ratings tresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Parameter Max. Units V rain-to-ource Voltage V ate-to-ource Voltage ±20 V T C = 25 C Continuous rain Current, V (ilicon Limited) 4 T C = C Continuous rain Current, V (ilicon Limited) 8 T = 25 C Continuous rain Current, V (ilicon Limited) 9 T C = 25 C Continuous rain Current, V (Package Limited) 375 I M Pulsed rain Current 460 C = 25 C Power issipation = 25 C Power issipation 3.3 W E ingle Pulse valanche Energy (Thermally Limited) 260 E (tested) ingle Pulse valanche Energy (Tested Value) 850 mj I R valanche Current ee Fig. 6, 7, 8a, 8b E R Repetitive valanche Energy mj T P Peak oldering Temperature 260 T J Operating Junction and -55 to + 75 C T T torage Temperature Range HEXFET is a registered trademark of Infineon. *Qualification standards can be found at L8

2 Thermal Resistance ymbol Parameter Typ. Max. Units R J Junction-to-mbient 45 R J Junction-to-mbient 2.5 R J Junction-to-mbient 20 C/W R J-Can Junction-to-Can.2 R J-PCB Junction-to-PCB Mounted 0.5 Linear erating Factor 0.83 W/ C tatic Electrical T J = 25 C (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions V (BR) rain-to-ource Breakdown Voltage V V = 0V, I = 250µ V (BR) / T J Breakdown Voltage Temp. Coefficient 0.08 V/ C Reference to 25 C, I =.0m R (on) tatic rain-to-ource On-Resistance m V = V, I = 68 V (th) ate Threshold Voltage V V = V, I = 250µ V (th) / T J ate Threshold Voltage Coefficient -3 mv/ C gfs Forward Transconductance 90 V = 25V, I = 68 R Internal ate Resistance V = V, V = 0V I rain-to-ource Leakage Current µ 250 V = V, V = 0V, T J = 25 C I ate-to-ource Forward Leakage V = 20V n ate-to-ource Reverse Leakage - V = -20V ynamic Electrical T J = 25 C (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions Q g Total ate Charge 8 20 V = 50V Q gs ate-to-ource Charge 23 V = V Q gs2 ate-to-ource Charge 6.8 I = 68 nc Q gd ate-to-rain ("Miller") Charge 34 ee Fig. Q godr ate Charge Overdrive 7.2 Q sw witch Charge (Q gs2 + Q gd ) 40.8 Q oss Output Charge 46 nc V = 6V, V = 0V t d(on) Turn-On elay Time 5 V = 50V, V = V t r Rise Time 30 I = 68 ns t d(off) Turn-Off elay Time 27 R =.8 t f Fall Time 4 C iss Input Capacitance 5660 V = 0V C oss Output Capacitance 40 V = 25V C rss Reverse Transfer Capacitance 240 ƒ =.0 MHz pf C oss Output Capacitance 9250 V = 0V, V =.0V, ƒ =.0 MHz C oss Output Capacitance 660 V = 0V, V = 80V, ƒ =.0 MHz C oss eff. Effective Output Capacitance 40 V = 0V, V = 0V to 80V Notes through are on page

3 iode Characteristics ymbol Parameter Min. Typ. Max. Units Conditions Continuous ource Current MOFET symbol I 4 (Body iode) showing the Pulsed ource Current integral reverse I M 460 (Body iode) p-n junction diode. V iode Forward Voltage.3 V T J = 25 C, I = 68, V = 0V t rr Reverse Recovery Time 6 92 ns T J = 25 C, I F = 68, V = 50V Q rr Reverse Recovery Charge 40 2 nc dv/dt = /µs urface mounted on in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. urface mounted on in. square Cu board, steady state. T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. tarting T J = 25 C, L = 0.mH, R = 25, I = 68. Pulse width 400µs; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at T J of approximately 90 C

4 I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () 0 V TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.8V BOTTOM 5.5V 0 V TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.8V BOTTOM 5.5V 5.5V V 60µs PULE WITH Tj = 25 C V, rain-to-ource Voltage (V) 60µs PULE WITH Tj = 75 C 0. 0 V, rain-to-ource Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics R (on), rain-to -ource On Resistance ( m ) 2 I = 68 8 T J = 25 C 6 R (on), rain-to -ource On Resistance ( m ) 4.0 Vgs = V T J = 25 C V, ate -to -ource Voltage (V) I, rain Current () Fig. 3 Typical On-Resistance vs. ate Voltage Fig. 4 Typical On-Resistance vs. rain Current 0 T J = -40 C T J = 25 C T J = 75 C I = 68 V = V V = 25V 60µs PULE WITH V, ate-to-ource Voltage (V) T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

5 V, ate-to-ource Voltage (V) I, rain Current () fs, Forward Transconductance () C, Capacitance (pf) V (th), ate threshold Voltage (V) I, Reverse rain Current () V = 0V T J = -40 C T J = 25 C T J = 75 C I = 250µ I =.0m I = T J, Temperature ( C ) V, ource-to-rain Voltage (V) Fig. 7 Typical Threshold Voltage vs. Junction Temperature T J = 25 C Fig 8. Typical ource-rain iode Forward Voltage 000 V = 0V, f = MHZ C iss = C gs + C gd, C ds HORTE C rss = C gd C oss = C ds + C gd C iss T J = 75 C C oss 0 C rss 50 V = V 20µs PULE WITH I,rain-to-ource Current () V, rain-to-ource Voltage (V) Fig 9. Typical Forward Trans conductance vs. rain Current 4.0 I = V = 80V.0 V = 50V V = 20V 8.0 Fig. Typical Capacitance vs. rain-to-ource Voltage Q, Total ate Charge (nc) Fig. Typical ate Charge vs. ate-to-ource Voltage T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature

6 I, rain-to-ource Current () 00 0 OPERTION IN THI RE LIMITE BY R (on) msec µsec msec E, ingle Pulse valanche Energy (mj) 200 I TOP 2 9 BOTTOM C Tc = 25 C Tj = 75 C ingle Pulse 0 0 V, rain-to-ource Voltage (V) tarting T J, Junction Temperature ( C) Fig 3. Maximum afe Operating rea Fig 4. Maximum valanche Energy vs. Temperature Thermal Response ( Z thjc ) C/W = INLE PULE ( THERML REPONE ) J J Ci= i Ri Ci= i Ri R R 2 R 3 R R 2 R E-006 E t, Rectangular Pulse uration (sec) R 4 Ri ( C/W) i (sec) R 4 C C e Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0 uty Cycle = ingle Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 50 C and Tstart =25 C (ingle Pulse) valanche Current () llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 50 C. 0..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 6. Typical valanche Current vs. Pulse Width

7 E R, valanche Energy (mj) TOP ingle Pulse BOTTOM.0% uty Cycle I = tarting T J, Junction Temperature ( C) Fig 7. Maximum valanche Energy vs. Temperature Notes on Repetitive valanche Curves, Figures 6, 7: (For further info, see N-5 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. afe operation in valanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 8a, 8b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 6, 7). tav = verage time in avalanche. = uty cycle in avalanche = tav f ZthJC(, tav) = Transient thermal resistance, see Figures 5) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E (R) = P (ave) t av Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms V Fig 9a. ate Charge Test Circuit Fig 9b. ate Charge Waveform Fig 20a. witching Time Test Circuit Fig 20b. witching Time Waveforms

8 irectfet Board Footprint, L8 (Large ize Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. = TE = RIN = OURCE Note: For the most current drawing please refer to IR website at

9 irectfet Outline imension, L8 (Large ize Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H J K L M P R IMENION METRIC IMPERIL MIN MX MIN MX L irectfet Part Marking "U" = TE N UTOMOTIVE MRKIN LOO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at

10 irectfet Tape & Reel imension (howing component orientation) LOE TPE FEE IRECTION NOTE: Controlling dimensions in mm td reel quantity is 4000 parts, ordered as. COE B C E F H REEL IMENION TNR OPTION (QTY 4000) METRIC MIN MX IMPERIL MX MIN NOTE: CONTROLLIN IMENION IN MM COE B C E F H IMENION METRIC MIN MX IMPERIL MIN MX Note: For the most current drawing please refer to IR website at

11 Qualification Information utomotive (per EC-Q) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture ensitivity Level FET2 Large Can ML Machine Model Class M4 EC-Q-002 E Human Body Model Class H2 EC-Q-00 Charged evice Model Class C4 EC-Q-005 RoH Compliant Yes Highest passing voltage. Revision History ate Updated datasheet with corporate template /6/205 Corrected ordering table on page. Updated Tape and Reel option on page Comments Published by Infineon Technologies 8726 München, ermany Infineon Technologies 205 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNIN ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury