AUTOMOTIVE GRADE. Orderable Part Number AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS Tape and Reel Left 800 AUIRFZ44ZSTRL
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1 Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE V DSS R DS(on) max. I D AUIRFZ44Z AUIRFZ44ZS HEXFET Power MOSFET D 55V 13.9m 51A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G TO-220AB AUIRFZ44Z S G D 2 Pak AUIRFZ44ZS G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS -Pak Tape and Reel Left 800 AUIRFZ44ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 51 I T C = 0 C Continuous Drain Current, V V (See Fig. 9) 36 A I DM Pulsed Drain Current 200 P C = 25 C Maximum Power Dissipation 80 W Linear Derating Factor 0.53 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy (Thermally Limited) 86 E AS (tested) Single Pulse Avalanche Energy Tested Value 5 mj I AR Avalanche Current See Fig.15,16, 12a, 12b A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw lbf in (1.1N m) Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.87 R CS Case-to-Sink, Flat, Greased Surface 0.50 R JA Junction-to-Ambient 62 R JA Junction-to-Ambient ( PCB Mount, steady state) 40 HEXFET is a registered trademark of Infineon. *Qualification standards can be found at C/W
2 AUIRFZ44Z/ZS T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance m V GS = V, I D = 31A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA gfs Forward Trans conductance 22 S V DS = 25V, I D = 31A I DSS Drain-to-Source Leakage Current 20 V DS = 55V, V GS = 0V µa 250 V DS = 55V,V GS = 0V,T J =125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge I D = 31A Q gs Gate-to-Source Charge nc V DS = 44V Q gd Gate-to-Drain Charge V GS = V t d(on) Turn-On Delay Time 14 V DD = 28V t r Rise Time 68 I D = 31A ns t d(off) Turn-Off Delay Time 33 R G = 15 t f Fall Time 41 V GS = V Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 1420 V GS = 0V C oss Output Capacitance 240 V DS = 25V C rss Reverse Transfer Capacitance 130 ƒ = 1.0MHz,See Fig.5 pf C oss Output Capacitance 830 V GS = 0V, V DS = 1.0V ƒ = 1.0MHz C oss Output Capacitance 190 V GS = 0V, V DS = 44V ƒ = 1.0MHz C oss eff. Effective Output Capacitance 300 V GS = 0V, V DS = 0V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 51 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 200 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.2 V T J = 25 C,I S = 31A,V GS = 0V t rr Reverse Recovery Time ns T J = 25 C,I F = 31A, V DD = 28V Q rr Reverse Recovery Charge nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by T Jmax, starting T J = 25 C, L = 0.18mH, R G = 25, I AS = 31A, V GS =V. Part not recommended for use above this value. I SD 31A, di/dt 840A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population 0% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is rated at TJ of approximately 90 C
3 I D, Drain-to-Source Current ) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFZ44Z/ZS 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics T J = 25 C 0 40 T J = 175 C T J = 25 C T J = 175 C 1.0 V DS = 15V 60µs PULSE WIDTH V DS = V V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance vs. Drain Current
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) AUIRFZ44Z/ZS 000 V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 31A V DS = 44V V DS = 28V V DS = 11V C iss C oss 4.0 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 00 0 T J = 175 C 00 0 OPERATION IN THIS AREA LIMITED BY R DS (on) 0µsec 1 T J = 25 C 0. V GS = 0V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 175 C Single Pulse 1msec msec V DS, Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
5 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) AUIRFZ44Z/ZS T C, Case Temperature ( C) 2.5 I D = 31A V GS = V T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thjc ) R 1 R 2 R 3 R 1 R 2 R 3 J J Ci= i Ri Ci= i Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E C C t 1, Rectangular Pulse Duration (sec) Ri ( C/W) i (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) AUIRFZ44Z/ZS 15V V DS L DRIVER 400 R G 20V tp D.U.T I AS V DD A I D TOP 3.8A 5.5A BOTTOM 31A Fig 12a. Unclamped Inductive Test Circuit 200 tp V (BR)DSS Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current 4.0 Fig 13a. Gate Charge Test Circuit 3.0 I D = 250µA Vds Id Vgs 2.0 Vgs(th) T J, Temperature ( C ) Qgs1 Qgs2 Qgd Qgodr Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform
7 E AR, Avalanche Energy (mj) AUIRFZ44Z/ZS 0 Duty Cycle = Single Pulse Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses E E E E E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width TOP Single Pulse BOTTOM 1% Duty Cycle I D = 31A Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-05 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) Starting T J, Junction Temperature ( C) P D (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 16. Maximum Avalanche Energy vs. Temperature
8 AUIRFZ44Z/ZS Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
9 AUIRFZ44Z/ZS TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number IR Logo AUFZ44Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code
10 AUIRFZ44Z/ZS D 2 Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak (TO-263AB) Part Marking Information Part Number IR Logo AUFZ44ZS YWWA XX XX Date Code Y= Year WW= Work Week Lot Code
11 AUIRFZ44Z/ZS D 2 Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.457) (.449) (.609) (.601) (.957) (.941).90 (.429).70 (.421) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX
12 AUIRFZ44Z/ZS Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Pak N/A D 2 -Pak MSL1 Class M2 (+/- 200V) AEC-Q1-002 Class H1A (+/- 500V) AEC-Q1-001 Class C5 (+/- 1125V) AEC-Q1-005 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 12/4/2015 Corrected ordering table on page 1. Comments 09/25/17 Corrected typo error on part marking on pages 9,. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
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More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFR3806PbF IRFU3806PbF
PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationIRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.
PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationV DSS V GS R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S(on) (m ) IRF6648PbF IRF6648TRPbF RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 2V outputs Low Conduction
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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