IRF6691PbF IRF6691TRPbF
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- Russell Wilkins
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1 Typical R S(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques PROVISIONL irectfet Power MOSFET Typical values (unless otherwise specified) P IRF669PbF IRF669TRPbF V SS V GS R S(on) R S(on) 20V max ±2V max.2mω@ 0V.8mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 47nC 5nC 4.4nC 26nC 30nC 2.0V pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT escription The IRF669PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. pplication note N-035 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF669PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency C-C converters that power high current loads such as the latest generation of microprocessors. The IRF669PbF has been optimized for parameters that are critical in synchronous buck converter s SyncFET sockets. bsolute Maximum Ratings T J = 25 C Parameter T J = 25 C I = V GS, Gate -to -Source Voltage (V) Fig. Typical On-Resistance vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. ƒ Surface mounted on in. square Cu board, steady state. irectfet ISOMETRIC V S rain-to-source Voltage 20 V V GS Gate-to-Source Voltage ±2 T = 25 C Continuous rain Current, V 0V e 32 T = 70 C Continuous rain Current, 0V e 26 T C = 25 C Continuous rain Current, V 0V f 80 j I M Pulsed rain Current g 260 E S Single Pulse valanche Energyh 230 mj I R valanche Currentg Q G Total Gate Charge (nc) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.72mH, R G = 25Ω, I S = I = 7 MT Max. V S = 6V V S = 0V Units 05/8/06
2 IRF669PbF PROVISIONL T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 20 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 2 mv/ C R S(on) Static rain-to-source On-Resistance mω.2.8 V GS(th) Gate Threshold Voltage V V GS(th) / T J Gate Threshold Voltage Coefficient -4. mv/ C.4 m I SS rain-to-source Leakage Current 500 µ 5 m I GSS Gate-to-Source Forward Leakage 00 n Gate-to-Source Reverse Leakage -00 gfs Forward Transconductance 0 S Q g Total Gate Charge 47 7 Q gs Pre-Vth Gate-to-Source Charge 4 Q gs2 Post-Vth Gate-to-Source Charge 4.4 nc Q gd Gate-to-rain Charge 5 V S = 0V V GS = 4.5V I = 7 Q godr Gate Charge Overdrive 4 See Fig. 4 Q sw Switch Charge (Q gs2 Q gd ) 9 Q oss Output Charge 30 nc V S = 0V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 23 V = 6V, V GS = 4.5Vi t r Rise Time 95 ns I = 26 t d(off) Turn-Off elay Time 25 Clamped Inductive Load t f Fall Time 0 See Fig. 5 & 6 C iss Input Capacitance 6580 V GS = 0V C oss Output Capacitance 2070 pf V S = 0V C rss Reverse Transfer Capacitance 840 ƒ =.0MHz iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 200j (Body iode) I SM Pulsed Source Current 260 (Body iode)c V S iode Forward Voltage 0.65 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions V GS = 0V, I =.0m Reference to 25 C, I = 0m V GS = 4.5V, I = 2 i V GS = 0V, I = 5 i V S = V GS, I = 250µ I = 0m, reference to 25 C V S = 20V, V GS = 0V V S = 6V, V GS = 0V V S = 6V, V GS = 0V, T J = 25 C V GS = 2V V GS = -2V V S = 0V, I = 26 Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 25, V GS = 0V i T J = 25 C, I F = 25 di/dt = 00/µs isee Fig. 7 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ˆ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is
3 PROVISIONL IRF669PbF bsolute Maximum Ratings = 25 C Power issipation e 2.8 = 70 C Power issipation e.8 C = 25 C Power issipation f 89 W T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 50 T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient em 45 R θj Junction-to-mbient km 2.5 R θj Junction-to-mbient lm 20 C/W R θjc Junction-to-Case fm.4 R θj-pcb Junction-to-PCB Mounted.0 Linear erating Factor e W/ C 00 0 = Thermal Response ( Z thj ) 0. R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ τ τ 2 τ 0.0 τ 3 τ 4 2 τ 3 τ Ci= τi/ri SINGLE PULSE Ci= τi/ri ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E-006 E t, Rectangular Pulse uration (sec) R 4 R 4 Ri ( C/W) τi (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient Notes: Used double sided cooling, mounting pad. Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at T J of approximately 90 C. ƒ Surface mounted on in. square Cu Mounted to a PCB with Š Mounted on minimum (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) 3
4 C, Capacitance(pF) I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF669PbF PROVISIONL VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V VGS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 0 2.7V 2.7V 0 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics I = 32 V GS = 0V 00 0 T J = 50 C.0 T J = 25 C V S = 0V 60µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0000 C iss C oss 000 C rss V S, rain-to-source Voltage (V) Fig 8. Typical Capacitance vs.rain-to-source Voltage 4
5 E S, Single Pulse valanche Energy (mj) I, rain Current () V GS(th) Gate threshold Voltage (V) I S, Reverse rain Current () I, rain-to-source Current () PROVISIONL IRF669PbF OPERTION IN THIS RE LIMITE BY R S (on) 00 T J = 50 C 00 00µsec T J = 25 C 0 0 msec V GS = 0V V S, Source-to-rain Voltage (V) Fig 9. Typical Source-rain iode Forward Voltage 200 T = 25 C Tj = 50 C Single Pulse 0msec V S, rain-to-source Voltage (V) Fig0. Maximum Safe Operating rea I = 250µ T C, Case Temperature ( C) Fig. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature I TOP 2 5 BOTTOM Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current 5
6 IRF669PbF PROVISIONL Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V - S V GS Vgs(th) 3m I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 4a. Gate Charge Test Circuit Fig 4b. Gate Charge Waveform V (BR)SS 5V tp V S L RIVER R G V GS 20V tp.u.t I S 0.0Ω - V I S Fig 5a. Unclamped Inductive Test Circuit Fig 5b. Unclamped Inductive Waveforms L V S V - V S 90%.U.T 0% V GS V GS Pulse Width < µs uty Factor < 0.% t d(on) t r t d(off) t f Fig 6a. Switching Time Test Circuit Fig 6b. Switching Time Waveforms 6
7 PROVISIONL IRF669PbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =0V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 7. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Board Footprint, MT Outline ƒ (Medium Size Can, T-esignation). Please see irectfet application note N-035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE S G S 7
8 IRF669PbF PROVISIONL irectfet Outline imension, MT Outline (Medium Size Can, T-esignation). Please see irectfet application note N-035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. irectfet Part Marking COE B C E F G H J K L M R P IMENSIONS METRIC IMPERIL MX MX
9 PROVISIONL irectfet Tape & Reel imension (Showing component orientation). IRF669PbF NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF669TRPBF). For 000 parts on 7" reel, order IRF669TRPBF COE B C E F G H REEL IMENSIONS STNR OPTION (QTY 4800) TR OPTION (QTY 000) METRIC IMPERIL METRIC IMPERIL MX MX MX MX LOE TPE FEE IRECTION NOTE: CONTROLLING IMENSIONS IN MM IMENSIONS METRIC IMPERIL COE MX MX B C E F G H ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.05/06 9
10 Note: For the most current drawings please refer to the IR website at:
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Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic Parameters
More informationAUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for Better TH and Lower EMI
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationAUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description
UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for Better TH and Lower EMI
More informationAUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description
UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier and High Speed Switching pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for
More informationIRF7240PbF HEXFET Power MOSFET
l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE Logic Level dvanced Process Technology Optimized for utomotive C-C, Motor rive and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationIRF7811AVPbF IRF7811AVPbF
P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More information120 P C = 25 C Power Dissipation 360 P C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97B IRFP4332PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET SO-8
l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationIRFHM9331PbF. HEXFET Power MOSFET. V DS -30 V R DS(on) max mω. Q g (typical) 32 nc I D -11 A. Absolute Maximum Ratings
P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
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