HEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000

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1 P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery operated C motor inverter MOSFET l System/Load Switch Features and Benefits Features Benefits IndustryStandard TSOP6 Package results in MultiVendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRLTS2242TRPbF TSOP6 Tape and Reel 3 Note Absolute Maximum Ratings V S V GS raintosource Voltage Parameter GatetoSource Voltage T A = 25 C Continuous rain Current, V 4.5V T A = 7 C Continuous rain Current, V 4.5V I M Pulsed rain Current c A = 25 C Power issipation A = 7 C Power issipation Linear erating Factor T J Operating Junction and T STG Storage Temperature Range Max. 2 ± to 5 Units V A W W/ C C Notes through are on page 2 2/23/2

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 2 V V SS / T J Breakdown Voltage Temp. Coefficient 9.4 mv/ C Reference to 25 C, I = ma R S(on) Static raintosource OnResistance V GS = 4.5V, I = 6.9A d m V GS = 2.5V, I = 5.5A d V GS(th) Gate Threshold Voltage.4. V V V S = V GS, I = μa GS(th) Gate Threshold Voltage Coefficient 3.8 mv/ C I SS raintosource Leakage Current. V S = 6V, V GS = V μa 5 V S = 6V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 2V na GatetoSource Reverse Leakage V GS = 2V gfs Forward Transconductance 8.5 S V S = V, I = 5.5A Q g Total Gate Charge 2 V S = V Q gs GatetoSource Charge.5 nc V GS = 4.5V Q gd Gatetorain Charge 4.3 I = 5.5A R G Gate Resistance 7 t d(on) TurnOn elay Time 5.8 t r Rise Time 8 t d(off) TurnOff elay Time 8 t f Fall Time 68 C iss Input Capacitance 95 C oss Output Capacitance 28 C rss Reverse Transfer Capacitance 2 iode Characteristics Conditions V GS = V, I = 25μA V = V, V GS = 4.5V I = 5.5A R G = 6.8 V GS = V V S = V ƒ =.KHz Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 2. MOSFET symbol I SM (Body iode) showing the A G Pulsed Source Current integral reverse 55 (Body iode)ãc pn junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S = 5.5A, V GS = V d t rr Reverse Recovery Time 4 62 ns T J = 25 C, I F = 5.5A, V = 6V Q rr Reverse Recovery Charge 6 24 nc di/dt = A/μs dã t on Forward TurnOn Time Time is dominated by parasitic Inductance ns pf S Thermal Resistance Parameter Typ. Max. Units R JA JunctiontoAmbient e 62.5 C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. ƒ When mounted on inch square copper board. 2

3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I, raintosource Current (A) R S(on), raintosource On Resistance (Normalized) I, raintosource Current (A) I, raintosource Current (A) VGS TOP V 4.5V 2.5V 2.25V 2.V.8V.55V BOTTOM.4V VGS TOP V 4.5V 2.5V 2.25V 2.V.8V.55V BOTTOM.4V.4V.4V 6μs PULSE WITH Tj = 25 C.. 6μs PULSE WITH Tj = 5 C.. V S, raintosource Voltage (V) V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.4 I = 6.9A V GS = 4.5V.2 T J = 5 C T J = 25 C V S = V 6μs PULSE WITH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature C iss C oss V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 5.5A V S = 6V V S = V V S = 4.V C rss V S, raintosource Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs.raintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage 3

4 I, V GS(th), rain Current (A) Gate threshold Voltage (V) I S, Reverse rain Current (A) I, raintosource Current (A) OPERATION IN THIS AREA LIMITE BY R S (on) T J = 5 C T J = 25 C V GS = V V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage 8.4 μsec msec msec. Tc = 25 C C Tj = 5 C Single Pulse.. V S, raintosource Voltage (V) Fig 8. Maximum Safe Operating Area I = μa I = 25μA I =.ma I = ma T A, Ambient Temperature ( C) Fig 9. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thja ) C/W = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja T A. E6 E5.... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 4

5 E AS, Single Pulse Avalanche Energy (mj) Power (W) R S(on), rainto Source On Resistance (m ) R S (on), rainto Source On Resistance (m ) 7 6 I = 6.9A Vgs = 2.5V T J = 25 C T J = 25 C Vgs = 4.5V V GS, Gate to Source Voltage (V) Fig 2. OnResistance vs. Gate Voltage I, rain Current (A) Fig 3. Typical OnResistance vs. rain Current I TOP.3A 2.A BOTTOM 5.5A Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. rain Current E8 E7 E6 E5 E4 E3 Time (sec) Fig 5. Typical Power vs. Time.U.T * ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V ReApplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * Reverse Polarity of.u.t for PChannel * V GS = 5V for Logic Level evices Fig 6. iode Reverse Recovery Test Circuit for PChannel HEXFET Power MOSFETs 5

6 Id Vds Vgs 2K K S UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform V S L I AS R G.U.T V 2V V GS tp IAS. RIVER A tp V (BR)SS 5V Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms R V S R G V GS.U.T. V GS t d(on) t r t d(off) t f % V V GS Pulse Width µs uty Factor 9% V S Fig 9a. Switching Time Test Circuit Fig 9b. Switching Time Waveforms 6

7 TSOP6 Package Outline TSOP6 Part Marking Information 3$578%( $578%(5&2'(5()(5(&( $ 6,'9 %,5) &,5) ',5) (,5) ),5) *,5),5),,5),5).,5),5) /27 &2'( 2,5/76753%) 3,5)76753%) 5,5)76753%) 6 RWSSOLFEOH 7,5/76753%) RWH$OLQHERYHWKHZRUNZHHN VVKRZQKHUHLQGLFWHV/HG)UHH < <($5 : :((. ATE COE MARKING INSTRUCTIONS ::,)35(&('('%</$67',*,72)&$/('$5<($5 :25. <($5 < :((. : ::,)35(&('('%<$/(77(5 <($5 < $ % & ' ( ) *. :25. :((. $ % & ' $ % & ' ; < = : ; < = Note: For the most current drawing please refer to IR website at: 7

8 TSOP6 Tape and Reel Information 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EIA48 & EIA ( 7.8 ) MAX. 9.9 (.39 ) 8.4 (.33 ) Qualification information NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA48 & EIA54. Qualification level Moisture Sensitivity Level RoHS compliant TSOP6 Cons umer (per JEEC JES 47F guidelines ) MS L (per IP C/JE E C JS T 2 ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEEC standard at the time of product release. ata and specifications subject to change without notice. IR WORL HEAQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 2/2 8