Direct Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000

Transcription

1 PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features 25V V GS max IndustryStandard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Direct Drive at High V GS MultiVendor Compatibility Environmentally Friendlier Orderable part number Package Type Standard Pack Form Quantity IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4 Note Absolute Maximum Ratings V DS V GS I T A = 25 C I T A = 7 C I DM P A = 25 C P A = 7 C T J T STG Parameter DraintoSource Voltage GatetoSource Voltage Continuous Drain Current, V V Continuous Drain Current, V V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Operating Junction and Storage Temperature Range Max. 3 ± to 5 Units V A W W/ C C Notes through are on page 2 /4/

2 IRF9388PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS DraintoSource Breakdown Voltage 3 V ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient.2 V/ C Reference to 25 C, I D = ma R DS(on) 8.5 V GS = 2V, I D = 2A e Static DraintoSource OnResistance mω.9 V GS = V, I D = 2A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25μA ΔV GS(th) Gate Threshold Voltage Coefficient 5.8 mv/ C I DSS DraintoSource Leakage Current. V DS = 24V, V GS = V μa 5 V DS = 24V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 25V μa GatetoSource Reverse Leakage V GS = 25V gfs Forward Transconductance 2 S V DS = V, I D = 9.A Q g Total Gate Charge h 8 nc V DS = 5V, V GS = 4.5V, I D = 9.A Q g Total Gate Charge h V GS = V Q gs GatetoSource Charge h 5.3 nc V DS = 5V Q gd GatetoDrain Charge h 8.5 I D = 9.A R G Gate Resistance h 5 Ω t d(on) TurnOn Delay Time 9 V DD = 5V, V GS = 4.5V e t r Rise Time 57 I D =.A ns t d(off) TurnOff Delay Time 8 R G =.8Ω t f Fall Time See Figs. 2a &2b C iss Input Capacitance 8 V GS = V C oss Output Capacitance 35 pf V DS = 25V C rss Reverse Transfer Capacitance 22 =.MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 2 mj I AR Avalanche Current c 9. A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.5 (Body Diode) showing the A I SM Pulsed Source Current integral reverse 9 (Body Diode)c pn junction diode. G V SD Diode Forward Voltage.2 V T J = 25 C, I S = 2.5A, V GS = V e t rr Reverse Recovery Time 5 7 ns T J = 25 C, I F = 2.5A, V DD = 24V Q rr Reverse Recovery Charge nc di/dt = A/μs e Thermal Resistance R θjl R θja Parameter JunctiontoDrain Lead g JunctiontoAmbient f Typ. Conditions V GS = V, I D = 25μA Max. 2 5 Units C/W D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 2.mH, R G = 25Ω, I AS = 9.A. Pulse width 4μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 9 C. For DESIGN AID ONLY, not subject to production testing. 2

3 C, Capacitance(pF) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRF9388PbF. VGS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V 2.5V VGS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V 2.5V μs PULSE WIDTH Tj = 25 C.. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics μs PULSE WIDTH Tj = 5 C.. V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics. I D = 2A T J = 5 C.4 V GS = V.2 T J = 25 C. V DS = V μs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss 4 2 I D = 9.A V DS = 24V V DS = 5V V DS =.V 8 C oss C rss 4 2 V DS, DraintoSource Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs.draintosource Voltage Fig. Typical Gate Charge vs.gatetosource Voltage 3

4 I D, V GS(th), Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) IRF9388PbF OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 5 C msec msec T J = 25 C V GS = V V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage 2 Fig 8. Maximum Safe Operating Area 2.5 T A = 25 C Tj = 5 C Single Pulse DC.. V DS, DraintoSource Voltage (V) 8 2. I D = 25μA T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thja ) C/W D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja T A. E E5.... t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient 4

5 E AS, Single Pulse Avalanche Energy (mj) Single Pulse Power (W) R DS(on), Drainto Source On Resistance (m Ω) R DS (on), Drainto Source On Resistance ( mω) IRF9388PbF 5 I D = 2A T J = 25 C 2 V GS = 4.5V T J = 25 C V GS = V V GS, Gate to Source Voltage (V) Fig 2. OnResistance vs. Gate Voltage I D, Drain Current (A) Fig 3. Typical OnResistance vs. Drain Current 5 I D 4 TOP 2.3A 3.3A BOTTOM 9.A Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. Drain Current E5 E4 E3 E2 E E Time (sec) Fig. Typical Power vs. Time D.U.T * Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G di/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * Reverse Polarity of D.U.T for PChannel * V GS = 5V for Logic Level Devices Fig 7. Diode Reverse Recovery Test Circuit for PChannel HEXFET Power MOSFETs 5

6 IRF9388PbF Id Vds Vgs 2K K S DUT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform V DS L I AS R G D.U.T V DD V 2V GS tp IAS.Ω DRIVER A tp V (BR)DSS 5V Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms R D V DS R G V GS D.U.T. V GS t d(on) t r t d(off) t f % V DD V GS Pulse Width µs Duty Factor. % 9% V DS Fig 2a. Switching Time Test Circuit Fig 2b. Switching Time Waveforms

7 IRF9388PbF SO8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) %,,&(, ;,//,(7(5, ; ( >@ E F ( H %,& %,& H %,& %,& ; H. / \ H.[ & \ ;E >@ ;/ ;F >@ & % 27(,(,2,* 72/(5&,*3(5(< &2752//,*,(,2,//,(7(5,(,25(2:,,//,(7(5>,&(@ 287/,(&2)2572((&287/,(,(,22(27,&/8(2/352758,2 2/352758,22772(;&((>@,(,22(27,&/8(2/352758,2 2/352758,22772(;&((>@,(,2,7(/(*72)/()252/(5,*72 8%757( >@ )22735,7 ;>@ SO8 Part Marking Information ;>@ ;>@ (;3/(7,,,5)2)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; 7(&2(<:: 3,*7(/()5(( 3528&7237,2/ < /7,*,72)7(<(5 :: :((. (%/<,7(&2( /27&2( 3578%(5 Note: For the most current drawing please refer to IR website at 7

8 IRF9388PbF SO8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 2.3 (.484 ).7 (.4 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA48 & EIA (.5 ) 2.4 (.488 ) Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer (per JEDEC JESD47F guidelines) MSL SO8 (per JEDEC JSTD2D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information./2 8