40V D V DSS. R DS(on) typ. 317Ac 195A. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET. Ordering Information. Applications.
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1 I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge and fullbridge topologies l Synchronous rectifier applications l Resonant mode power supplies l ORing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters G PD StrongIRFET D V DSS HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) S I D (Package Limited) D 4V.25mΩ.6mΩ 37Ac 95A Benefits l l l l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability LeadFree S D G TO22AB G D S Gate Drain Source Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity TO22 Tube 5 R DS(on), Drainto Source On Resistance (m Ω) I D = A 3 Limited By Package V GS, Gate to Source Voltage (V) T C, Case Temperature ( C) Fig. Typical OnResistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 4/2/2
2 Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 37c I T C = C Continuous Drain Current, V V (Silicon Limited) 224c I T C = 25 C Continuous Drain Current, V V (Wire Bond Limited) 95 A I DM Pulsed Drain Current d 27 P C = 25 C Maximum Power Dissipation 294 W Linear Derating Factor.96 W/ C V GS GatetoSource Voltage ± 2 V T J Operating Junction and 55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 632 or M3 screw 3 lbfx in (.Nx m) C Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 49 mj E AS (tested) Single Pulse Avalanche Energy Tested Value k 8 I AR Avalanche Currentd See Fig. 4, 5, 22a, 22b A E AR Repetitive Avalanche Energy d mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase j.5 R θcs CasetoSink, Flat Greased Surface.5 R θja JunctiontoAmbient 62 C/W (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 4 V V GS = V, I D = 25μA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient.32 V/ C Reference to 25 C, I D = 5mAd R DS(on) Static DraintoSource OnResistance.25.6 mω V GS = V, I D = A g.8 mω V GS = 6.V, I D = 5A g V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25μA I DSS I GSS DraintoSource Leakage Current GatetoSource Forward Leakage. GatetoSource Reverse Leakage 5 μa na R G Internal Gate Resistance 2. Ω V DS = 4V, V GS = V V DS = 4V, V GS = V, V GS = 2V V GS = 2V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 95A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN4) Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting, L =.99mH R G = 5Ω, I AS = A, V GS =V. I SD A, di/dt 37A/μs, V DD V (BR)DSS, T J 75 C. Pulse width 4μs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. ˆ R θ is measured at T J approximately 9 C. This value determined from sample failure population, starting, L=.99mH, R G = 5Ω, I AS = A, V GS =V. 2
3 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 2 S Q g Total Gate Charge Q gs GatetoSource Charge 5 Q gd GatetoDrain ("Miller") Charge 77 Q sync Total Gate Charge Sync. (Q g Q gd ) 39 t d(on) TurnOn Delay Time 24 t r Rise Time 68 t d(off) TurnOff Delay Time 5 t f Fall Time 68 C iss Input Capacitance 82 C oss Output Capacitance 54 C rss Reverse Transfer Capacitance 4 C oss eff. (ER) Effective Output Capacitance (Energy Related) 88 C oss eff. (TR) Effective Output Capacitance (Time Related) 228 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 37c (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 27 (Body Diode)Ãd pn junction diode. V SD Diode Forward Voltage.9.3 V, I S = A, V GS = V g dv/dt Peak Diode RecoveryÃfà 5. V/ns T J = 75 C, I S = A, V DS = 4V t rr Reverse Recovery Time 38 V R = 34V, ns 37 I F = A Q rr Reverse Recovery Charge 5 di/dt = A/μs g nc 5 I RRM Reverse Recovery Current.9 A nc ns pf Conditions V DS = V, I D = A I D = A V DS =2V V GS = V g I D = A, V DS =V, V GS = V V DD = 2V I D = 3A R G = 2.7Ω V GS = V g V GS = V V DS = 25V ƒ =. MHz, See Fig. 5 V GS = V, V DS = V to 32V i, See Fig. 2 V GS = V, V DS = V to 32V h D S 3
4 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 6μs PULSE WIDTH Tj = 25 C.. V DS, DraintoSource Voltage (V) 4.5V 6μs PULSE WIDTH Tj = 75 C. V DS, DraintoSource Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 2. T J = 75 C.8.6 I D = A V GS = V. V DS = V 6μs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 5. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 6. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = A V DS = 32V V DS = 2V C iss Crss C oss V Q G, Total Gate Charge (nc) DS, DraintoSource Voltage (V) Fig 7. Typical Capacitance vs. DraintoSource Voltage Fig 8. Typical Gate Charge vs. GatetoSource Voltage 4
5 R DS (on), Drainto Source On Resistance ( mω) V (BR)DSS, DraintoSource Breakdown Voltage (V) Energy (μj) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C Limited By Package msec μsec msec V GS = V Tc = 25 C Tj = 75 C Single Pulse DC V SD, SourcetoDrain Voltage (V) V DS, DraintoSource Voltage (V) Fig 9. Typical SourceDrain Diode Forward Voltage 5 49 Id = 5.mA Fig. Maximum Safe Operating Area.6.4 V DS = V to 32V T J, Temperature ( C ) Fig. DraintoSource Breakdown Voltage V DS, DraintoSource Voltage (V) Fig 2. Typical C OSS Stored Energy V GS = 5.5V V GS = 6.V. 5. VGS = 7.V VGS = 8.V VGS = V I D, Drain Current (A) Fig 3. Typical OnResistance vs. Drain Current 5
6 E AR, Avalanche Energy (mj) Avalanche Current (A) D = Thermal Response ( Z thjc ) C/W SINGLE PULSE. ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E6 E5.... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 5 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25 C and Tstart = 5 C..E6.E5.E4.E3.E2.E tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 6
7 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) 4.5 I F = 6A V R = 34V ID = 25μA ID =.ma ID =.A T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/μs) Fig. 7 Typical Recovery Current vs. di f /dt 8 I F = A V R = 34V I F = 6A V R = 34V di F /dt (A/μs) Fig. 8 Typical Recovery Current vs. di f /dt di F /dt (A/μs) Fig. 9 Typical Stored Charge vs. di f /dt I F = A V R = 34V di F /dt (A/μs) Fig. 2 Typical Stored Charge vs. di f /dt 7
8 D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test ReApplied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2μF.3μF V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 8
9 TO22AB Package Outline Dimensions are shown in millimeters (inches) TO22AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 789 ASSEMBLED ON WW 9, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead Free" INTERNATIONAL RECTIFIER LOGO AS S E MB L Y LOT CODE PART NUMBER DATE CODE YEAR = 2 WEEK 9 LINE C TO22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: Qualification information Qualification level Moisture Sensitivity Level RoHS compliant TO22AB Industrial (per JEDEC JESD47F guidelines) N/A (per JE DE C JS TD2D ) Yes Qualification standards can be found at International Rectifier s web site: Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N Sepulveda., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 4/22 9
40V V DSS. R DS(on) typ. I D (Silicon Limited) I D (Package Limited) 409Ac 195A. HEXFET Power MOSFET
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PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationTO-220AB IRFB4610. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 7.6
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationIR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIR MOSFET StrongIRFET IRF60B217
I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationIRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A
l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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