W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
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1 PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l LeadFree G D S V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) D G S S D 2 Pak 7 Pin S SS 6V.5m: 2.m: 293Ac 24A G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 293c I T C = C Continuous Drain Current, V V (Silicon Limited) 27 c I T C = 25 C Continuous Drain Current, V V (Package Limited) 24 A I DM Pulsed Drain Current d 72 P C = 25 C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak Diode Recovery f V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 3 C (.6mm from case) Mounting torque, 632 or M3 screw lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 33 mj I AR Avalanche Current d See Fig. 4, 5, 22a, 22b, A E AR Repetitive Avalanche Energy g mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase kl.4 R θja JunctiontoAmbient (PCB Mount) jk 4 C/W /6/8
2 IRFS367PPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 6 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.7 V/ C R DS(on) Static DraintoSource OnResistance.5 2. mω V GS(th) Gate Threshold Voltage V I DSS I GSS DraintoSource Leakage Current GatetoSource Forward Leakage 2 GatetoSource Reverse Leakage 25 µa na R G(int) Internal Gate Resistance 2. Ω Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 5mAd V GS = V, I D = 68A g V DS = V GS, I D = 25µA V DS = 6V, V GS = V V DS = 6V, V GS = V, V GS = 2V V GS = 2V (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 29 S V DS = 25V, I D = 68A Q g Total Gate Charge 2 3 I D = 68A Q gs GatetoSource Charge 37 Q gd GatetoDrain ("Miller") Charge 6 Q sync Total Gate Charge Sync. (Q g Q gd ) 4 t d(on) TurnOn Delay Time 4 t r Rise Time 6 t d(off) TurnOff Delay Time 8 t f Fall Time 69 C iss Input Capacitance 885 C oss Output Capacitance 7 C rss Reverse Transfer Capacitance 525 C oss eff. (ER) Effective Output Capacitance (Energy Related)i 46 C oss eff. (TR) Effective Output Capacitance (Time Related) h 95 Diode Characteristics Symbol Parameter Min. Typ. Max. Units V DS = 3V V GS = V g I D = 68A, V DS =V, V GS = V V DD = 39V I D = 68A R G = 2.7Ω V GS = V g V GS = V V DS = 5V ƒ =.MHz (See Fig 5) V GS = V, V DS = V to 48V i(see Fig ) V GS = V, V DS = V to 48V h Conditions I D S Continuous Source Current MOSFET symbol 293c (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 72 S (Body Diode)d pn junction diode. V SD Diode Forward Voltage.3 V, I S = 68A, V GS = V g t rr Reverse Recovery Time 44 V R = 5V, ns 48 I F = 68A Q rr Reverse Recovery Charge 5 di/dt = A/µs g nc 62 I RRM Reverse Recovery Current 2.3 A t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) nc ns pf Notes: Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 24A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting, L =.2mH R G = 25Ω, I AS = 68A, V GS =V. Part not recommended for use above this value. I SD 68A, di/dt 4 A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. ˆ When mounted on " square PCB (FR4 or G Material). For recommended footprint and soldering techniquea refer to applocation note # AN994 echniques refer to application note #AN994. R θ is measured at T J approximately 9 C Š R θjc value shown is at time zero 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFS367PPbF VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V 3.5V 3.5V 6µs PULSE WIDTH Tj = 25 C.. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics T J = 75 C I D = 68A V GS = V.5. V DS = 25V 6µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED 6. I D = 68A C rss = C gd C oss = C ds C gd C iss 2. V DS = 48V V DS = 3V C oss 8. C rss V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) DraintoSource Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) IRFS367PPbF T J = 75 C OPERATION IN THIS AREA LIMITED BY R DS (on) µsec LIMITED BY PACKAGE msec msec DC V GS = V Tc = 25 C Tj = 75 C Single Pulse.. V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area Limited By Package 8 75 Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) 4 2 Fig. DraintoSource Breakdown Voltage I D TOP 35A 7A BOTTOM 68A V DS, DraintoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 Avalanche Current (A) E AR, Avalanche Energy (mj) IRFS367PPbF Thermal Response ( Z thjc ) C/W... D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E6 E5.... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ 4 τ 4 τ C τ Duty Cycle = Single Pulse. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse).5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C..E6.E5.E4.E3.E2.E tav (sec) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = 68A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate threshold Voltage (V) I RR (A) IRFS367PPbF I D = 25µA I D =.ma I D =.A 2 6 I F = 2A V R = 5V T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature di F /dt (A/µs) Fig. 7 Typical Recovery Current vs. di f /dt I F = 68A V R = 5V I F = 2A V R = 5V di F /dt (A/µs) Fig. 8 Typical Recovery Current vs. di f /dt di F /dt (A/µs) Fig. 9 Typical Stored Charge vs. di f /dt I F = 68A V R = 5V di F /dt (A/µs) Fig. 2 Typical Stored Charge vs. di f /dt 6
7 IRFS367PPbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2µF.3µF V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 IRFS367PPbF D 2 Pak (TO263CB) 7 Long Leads Package Outline Dimensions are shown in milimeters (inches) D 2 Pak 7 Pin Part Marking Information Ã4 Note: For the most current drawing please refer to IR website at: 8
9 IRFS367PPbF D 2 Pak 7 Pin Tape and Reel Dimensions are shown in milimeters (inches) Note: For the most current drawing please refer to IR website at: Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /28 9
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More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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