Absolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
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1 PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. G HEXFET Power MOSFET D D S TO-22AB V DSS = 3V R DS(on) = 2.4mΩ S D G I D = 75A G D S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 1V (Silicon Limited) 26 I T C = 1 C Continuous Drain Current, V 1V (Silicon Limited) 18 A I T C = 25 C Continuous Drain Current, V 1V (Package Limited) 75 I DM Pulsed Drain Current c 12 P C = 25 C Power Dissipation 29 W Linear Derating Factor 2. W/ C V GS Gate-to-Source Voltage ± 2 V E AS (Thermally limited) Single Pulse Avalanche Energyd 29 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 82 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to 175 T STG Storage Temperature Range C 3 (1.6mm from case ) 1 lbfyin (1.1Nym) Soldering Temperature, for 1 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case j.51 R θcs Case-to-Sink, Flat, Greased Surface i.5 C/W R θja Junction-to-Ambient ij /22/1
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 3 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.21 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance mω V GS = 1V, I D = 75A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 15µA gfs Forward Transconductance 12 S V DS = 1V, I D = 75A I DSS Drain-to-Source Leakage Current 2 µa V DS = 3V, V GS = V 25 V DS = 3V, V GS = V, T J = 125 C I GSS Gate-to-Source Forward Leakage 2 na V GS = 2V Gate-to-Source Reverse Leakage -2 V GS = -2V Q g Total Gate Charge I D = 75A Q gs Gate-to-Source Charge 51 nc V DS = 24V Q gd Gate-to-Drain ("Miller") Charge 58 V GS = 1V e t d(on) Turn-On Delay Time 24 V DD = 15V t r Rise Time 1 I D = 75A t d(off) Turn-Off Delay Time 48 ns R G = 3.2 Ω t f Fall Time 37 V GS = 1V e L D Internal Drain Inductance 4.5 Between lead, nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package and center of die contact V GS = V V DS = 25V C iss Input Capacitance 632 C oss Output Capacitance 198 C rss Reverse Transfer Capacitance 11 pf C oss Output Capacitance 593 C oss Output Capacitance 21 C oss eff. Effective Output Capacitance 35 ƒ = 1.MHz V GS = V, V DS = 1.V, ƒ = 1.MHz V GS = V, V DS = 24V, ƒ = 1.MHz V GS = V, V DS = V to 24V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 75 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 12 integral reverse (Body Diode)Ãc p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 75A, V GS = V e t rr Reverse Recovery Time ns T J = 25 C, I F = 75A, V DD = 15V Q rr Reverse Recovery Charge nc di/dt = 1A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) Notes: Repetitive rating; pulse width limited by max. junction Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical temperature. (See fig. 11). repetitive avalanche performance. Limited by T Jmax, starting T J = 25 C, L =.1mH R G = 25Ω, This value determined from sample failure population. 1% I AS = 75A, V GS =1V. Part not recommended for use above tested to this value in production. this value. This is only applied to TO-22AB pakcage. ƒ Pulse width 1.ms; duty cycle 2%. ˆ R C oss eff. is a fixed capacitance that gives the same charging time θ is measured at T J approximately 9 C as C oss while V DS is rising from to 8% V DSS. 2
3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) 1 1 VGS TOP 15V 1V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 1 VGS TOP 15V 1V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V V 6µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 4.5V 6µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C 1. T J = 175 C 2 16 T J = 175 C T J = 25 C 8 V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) 4 V DS = 1V 38µs PULSE WIDTH I D, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 12 1 V GS = V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 16 I D = 75A V DS = 24V VDS= 15V 8 Ciss Coss Crss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage T J = 175 C OPERATION IN THIS AREA LIMITED BY R DS (on) 1msec 1µsec 1. T J = 25 C 1 LIMITED BY PACKAGE 1msec 1. V GS = V V SD, Source-to-Drain Voltage (V) DC 1 Tc = 25 C Tj = 175 C Single Pulse V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) 3 25 LIMITED BY PACKAGE 2. I D = 75A V GS = 1V T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 1. Normalized On-Resistance Vs. Temperature 1 Thermal Response ( Z thjc ) D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) 1E-6 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) V DS L 15V DRIVER 12 1 I D TOP 26A 42A BOTTOM 75A 8 R G 2V V GS tp Fig 12a. Unclamped Inductive Test Circuit tp D.U.T IAS.1Ω V (BR)DSS - V DD A Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy Vs. Drain Current 1 V V G Q GS Q GD I D = 1.A I D = 1.mA ID = 25µA I D = 15µA Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform KΩ 2. 12V V GS.2µF.3µF D.U.T. V - DS mA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6
7 Avalanche Current (A) E AR, Avalanche Energy (mj) 1 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth TOP Single Pulse BOTTOM 1% Duty Cycle I D = 75A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-15 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] Vs. Temperature E AS (AR) = P D (ave) t av 7
8 - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =1V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD 1V Pulse Width 1 µs Duty Factor.1 % Fig 18a. Switching Time Test Circuit V DS 9% 1% V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8
9 TO-22AB Package Outline(Dimensions are shown in millimeters (inches)) TO-22AB Part Marking Information EXAMPLE: T HIS IS AN IRF11 LOT CODE 1789 ASSEMBLED ON WW 19, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INT ERNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR = 2 WEEK 19 LINE C TO-22AB package is not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp:// 2. For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 7/21 9
A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
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PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationW/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR
PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationW/ C V GS Gate-to-Source Voltage ±16 dv/dt Peak Diode Recovery f 8.0. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b E AR
PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.5
PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRFS3107PbF IRFSL3107PbF HEXFET Power MOSFET
PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9728 IRFP336PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More information