V DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
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1 PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 3V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA G D HEXFET Power MOSFET V DSS 5V R DS(on) typ. 2m: max. 5.5m: 78A I D D S D G S TO247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 78 c A I T C = C Continuous Drain Current, V V 55 I DM Pulsed Drain Current d 33 P C = 25 C Maximum Power Dissipation 3 W Linear Derating Factor 2. W/ C V GS GatetoSource Voltage ±3 V E AS (Thermally limited) Single Pulse Avalanche Energy e 2 mj Operating Junction and 55 to 75 C T STG Thermal Resistance Storage Temperature Range Soldering Temperature, for seconds 3 (.6mm from case) Mounting torque, 632 or M3 screw lbxin (.Nxm) Parameter Typ. Max. Units R θjc JunctiontoCase g.49 R θcs CasetoSink, Flat, Greased Surface.24 C/W R θja JunctiontoAmbient g 4 6/23/6
2 = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 5 V V (BR)DSS / Breakdown Voltage Temp. Coefficient 5 mv/ C Reference to 25 C, I D = mad R DS(on) Static DraintoSource OnResistance mω V GS = V, I D = 33A f V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA I DSS DraintoSource Leakage Current 2 µa V DS = 5V, V GS = V. ma V DS = 5V, V GS = V, = 25 C I GSS GatetoSource Forward Leakage na V GS = 2V GatetoSource Reverse Leakage V GS = 2V R G(int) Internal Gate Resistance.8 Ω = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 3 S Q g Total Gate Charge 7 nc Q gs GatetoSource Charge 24 Q gd GatetoDrain ("Miller") Charge 2 t d(on) TurnOn Delay Time 8 ns t r Rise Time 6 t d(off) TurnOff Delay Time 25 t f Fall Time 35 C iss Input Capacitance 446 pf C oss Output Capacitance 39 C rss Reverse Transfer Capacitance 82 Conditions V GS = V, I D = 25µA Conditions V DS = 25V, V DS = 75V V GS = V f V DD = 75V R G = 2.5Ω V GS = V f V GS = V V DS = 25V ƒ =.MHz Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 78c A Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 33 A integral reverse G (Body Diode)d pn junction diode. V SD Diode Forward Voltage.3 V = 25 C, I S = 5A, V GS = V f t rr Reverse Recovery Time 89 3 ns Q rr Reverse Recovery Charge 3 45 nc V R = 28V, I RRM Reverse Recovery Current 6.5 A di/dt = A/µs f t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) D S Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by max, starting = 25 C, L =.7mH R G = 25Ω, I AS = 5A, V GS =V. Part not recommended for use above this value. Pulse width 4µs; duty cycle 2%. R θ is measured at approximately 9 C 2
3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (Α) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V VGS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V 5.V. 5.V 6µs PULSE WIDTH Tj = 25 C. V DS, DraintoSource Voltage (V) 6µs PULSE WIDTH Tj = 75 C. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics V GS = V = 75 C = 25 C.5 V DS = 25V 6µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics , Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature Ciss V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V DS = 2V VDS= 75V VDS= 3V 3 Coss 8 2 Crss V DS, DraintoSource Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage 3
4 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) I D, Drain Current (A) V (BR)DSS, DraintoSource Breakdown Voltage I D, DraintoSource Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) I SD, Reverse Drain Current (A). = 75 C = 25 C V GS = V Tc = 25 C Tj = 75 C Single Pulse msec µsec msec DC V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage V DS, DraintoSource Voltage (V) Fig 8. Maximum Safe Operating Area 8 LIMITED BY PACKAGE T C, Case Temperature ( C) , Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. DraintoSource Breakdown Voltage I D TOP 3A 2A BOTTOM 5A V DS, DraintoSource Voltage (V) Starting, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy Vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) Thermal Response ( Z thjc ) D = R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri τ C τ Ri ( C/W) τι (sec) SINGLE PULSE ( THERMAL RESPONSE ). E6 E5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase Duty Cycle = Single Pulse. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse).5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C E6.E5.E4.E3.E2.E TOP Single Pulse BOTTOM % Duty Cycle Starting, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) I RRM (A) I D =.A I D =.ma I D = 25µA , Temperature ( C ) Fig 6. Threshold Voltage Vs. Temperature I F = 33A V R = 28V = 25 C = 25 C di f / dt (A / µs) Fig. 7 Typical Recovery Current vs. di f /dt I F = 5A V R = 28V = 25 C = 25 C di f / dt (A / µs) Fig. 8 Typical Recovery Current vs. di f /dt 2 8 I F = 33A V R = 28V 4 = 25 C = 25 C di f / dt (A / µs) Fig. 9 Typical Stored Charge vs. di f /dt I F = 5A V R = 28V 4 = 25 C = 25 C di f / dt (A / µs) Fig. 2 Typical Stored Charge vs. di f /dt 6
7 D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T I AS.Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T % V GS Pulse Width < µs Duty Factor <.% V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 TO247AC Package Outline Dimensions are shown in millimeters (inches) TO247AC package is not recommended for Surface Mount Application. TO247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WIT H AS S E MBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "LeadFree" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 35H PART NUMBER DATE CODE YEAR = 2 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 6/6 8
9 Note: For the most current drawings please refer to the IR website at:
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
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PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
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PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
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Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
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IRFB347ZPbF Applications l Battery Management l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized
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PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
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R DS(on), Drainto Source On Resistance (m ) I D, Drain Current (A) PD 97782A Applications StrongIRFET l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge
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PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
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Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge and fullbridge topologies l Synchronous rectifier applications
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
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V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
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