V DSS R DS(on) max (mω)
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1 P IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V @V GS = -4.5V -5.0 escription New trench HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S S S G Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -40 V T = 25 C Continuous rain Current, V -0V -6.2 T = 70 C Continuous rain Current, V -0V -4.9 I M Pulsed rain Current -25 = 25 C Power issipation ƒ 2.5 = 70 C Power issipation ƒ.6 W Linear erating Factor 20 mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient ƒ 50 C/W /26/0
2 IRF724 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -40 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.03 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 25 4 V GS = -0V, I = -6.2 mω V GS = -4.5V, I = -5.0 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ g fs Forward Transconductance 8.9 S V S = -0V, I = -6.2 I SS rain-to-source Leakage Current -0 V S = -32V, V GS = 0V µ -25 V S = -32V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge I = -6.2 Q gs Gate-to-Source Charge 4 2 nc V S = -32V Q gd Gate-to-rain ("Miller") Charge V GS = -0V t d(on) Turn-On elay Time 24 V = -20V t r Rise Time 280 I = -.0 ns t d(off) Turn-Off elay Time 20 R G = 6.0Ω t f Fall Time 00 V GS = -0V C iss Input Capacitance 3220 V GS = 0V C oss Output Capacitance 60 pf V S = -25V C rss Reverse Transfer Capacitance 90 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G -25 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.5 Q rr Reverse Recovery Charge nc di/dt = -00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in square Cu board Pulse width 400µs; duty cycle 2%. 2
3 -I, rain-to-source Current (Α) IRF724 -I, rain-to-source Current () VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current () 00 0 VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I = T J = 50 C.00 T J = 25 C 0.0 V S = -25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS = -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 -I, rain-to-source Current () C, Capacitance(pF) IRF Ciss Coss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd -V GS, Gate-to-Source Voltage (V) I = -6.2 V S =-32V V S =-20V 0 Crss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) Tc = 25 C Tj = 50 C Single Pulse OPERTION IN THIS RE LIMITE BY R S (on) 00µsec msec 0msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 IRF V S R -I, rain Current () R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V Fig 0a. Switching Time Test Circuit T, Case Temperature ( C C) V GS t d(on) t r t d(off) t f 0% Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = SINGLE PULSE Notes: (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 R S(on), rain-to -Source On Resistance ( Ω) R S (on), rain-to-source On Resistance ( Ω) IRF V GS = -4.5V 0.04 I = V GS = -0V V GS, Gate -to -Source Voltage (V) I, rain Current () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. + V S - V G V GS -3m Charge I G I Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6
7 -V GS(th) Gate threshold Voltage (V) Power (W) IRF I = -250µ T J, Temperature ( C ) Time (sec) Fig 5. Typical Vgs(th) Vs. Junction Temperature Fig 6. Typical Power Vs. Time 7
8 IRF724 SO-8 Package etails E 6 6X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BS IC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RTE. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO YWW XXXX F70 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK LOT COE PRT NUMBER 8
9 IRF724 SO-8 Tape and Reel T ER M IN L N U M B E R 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information./0 9
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More informationV DSS R DS(on) max Qg
l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRF9953. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.25Ω PRELIMINARY
Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationMicro3. 1
P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationIRF6655PbF IRF6655TRPbF
Typical R S(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationIRF6665PbF IRF6665TRPbF
IGITL UIO MOSFET Features Latest MOSFET Silicon technology Key parameters optimized for Class- audio amplifier applications Low R S(on) for improved efficiency Low Q g for better TH and improved efficiency
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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