V DSS R DS(on) max (mω)
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1 Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These P-hannel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S S S G Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -20 V T = 25 ontinuous rain urrent, V -4.5V -5 T = 70 ontinuous rain urrent, V -4.5V -2 I M Pulsed rain urrent -60 = 25 Power issipation = 70 Power issipation 3.6 W Linear erating Factor 20 mw/ V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbient3 50 /W /20/0
2 Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)SS rain-to-source Breakdown Voltage -20 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. oefficient 0.00 V/ Reference to 25, I = -m R S(on) Static rain-to-source On-Resistance 8.2 V GS = -4.5V, I = -5 2 mω 3 V GS = -2.5V, I = -3 2 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ g fs Forward Transconductance 44 S V S = -0V, I = -5 I SS rain-to-source Leakage urrent -.0 V S = -6V, V GS = 0V µ -25 V S = -6V, V GS = 0V, T J = 70 I GSS Gate-to-Source Forward Leakage -00 V GS = -2V n Gate-to-Source Reverse Leakage 00 V GS = 2V Q g Total Gate harge I = -5 Q gs Gate-to-Source harge 8 27 n V S = -0V Q gd Gate-to-rain ("Miller") harge 2 32 V GS = -4.5V t d(on) Turn-On elay Time 3 V = -0V 2 t r Rise Time 20 I = -.0 ns t d(off) Turn-Off elay Time 230 R G = 6.0Ω t f Fall Time 60 V GS = -4.5V iss Input apacitance 7980 V GS = 0V oss Output apacitance 480 pf V S = -5V rss Reverse Transfer apacitance 980 ƒ =.0kHz Source-rain Ratings and haracteristics Parameter Min. Typ. Max. Units onditions I S ontinuous Source urrent MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source urrent integral reverse G -60 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25, I S = -2.5, V GS = 0V 2 t rr Reverse Recovery Time ns T J = 25, I F = -2.5 Q rr Reverse Recovery harge n di/dt = -00/µs 2 Notes: Repetitive rating; pulse width limited by max. junction temperature. 3 Surface mounted on in square u board, t 0sec. 2 Pulse width 400µs; duty cycle 2%. 2
3 -I, rain-to-source urrent () VGS TOP -7.0V -5.0V -4.5V -2.5V -.8V -.5V -.2V BOTTOM -.0V -.0V 20µs PULSE WITH T J = V S, rain-to-source Voltage (V) -I, rain-to-source urrent () VGS TOP -7.0V -5.0V -4.5V -2.5V -.8V -.5V -.2V BOTTOM -.0V -.0V 20µs PULSE WITH T J = V S, rain-to-source Voltage (V) Fig. Typical Output haracteristics Fig 2. Typical Output haracteristics -I, rain-to-source urrent () 00 0 T J = 50 T J = 25 V S= -5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS= -4.5V T J, Junction Temperature ( ) Fig 3. Typical Transfer haracteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 , apacitance (pf) VGS = 0V, f=mhz iss = gs +gd, ds rss = gd oss = ds +gd iss oss rss SHORTE -V GS, Gate-to-Source Voltage (V) I = -5 V S =-6V V S =-0V V S, rain-to-source Voltage (V) Q G,TotalGateharge(n) Fig 5. Typical apacitance Vs. rain-to-source Voltage Fig 6. Typical Gate harge Vs. Gate-to-Source Voltage -I S, Reverse rain urrent () 00 0 T J = 50 T J = 25 V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain urrent () OPERTION IN THIS RE LIMITE BY R S(on) 00us ms 0ms T =25 TJ = 50 Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 5 V S R -I, rain urrent () T, ase Temperature ( ) 0% R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V GS t d(on) t r t d(off) t f + - V Fig 0a. Switching Time Test ircuit Fig 9. Maximum rain urrent Vs. ase Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t /t 2 2. Peak T J= P M xz thj +T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 R S(on), rain-to -Source On Resistance ( Ω) R S (on), rain-to-source On Resistance (Ω) IRF V GS = -2.5V I = V GS, Gate -to -Source Voltage (V) V GS = -4.5V I, rain urrent () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain urrent urrent Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. - + V S V G V GS -3m harge I G I urrent Sampling Resistors Fig 4a. Basic Gate harge Waveform Fig 4b. Gate harge Test ircuit 6
7 -V GS(th), Variace ( V ) Power (W) IRF I = -250µ T J, Temperature ( ) Time (sec) Fig 5. Typical Vgs(th) Variance Vs. Juction Temperature Fig 6. Typical Power Vs. Time 7
8 SO-8 Package etails E 6 6X e B H 0.25 [.00] IM INHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSI.27 BSI.025 BSI BSI e y Kx45 8X b 0.25 [.00] B 0.0 [.004] 8X L 7 8X c NOTES:. IMENSIONING & TOLERNING PER SME Y4.5M ONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INHES]. 4. OUTLINE ONFORMS TO JEE OUTLINE MS IMENSION OES NOT INLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXEE 0.5 [.006]. 6 IMENSION OES NOT INLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. SO-8 Part Marking 6.46 [.255] 3X.27 [.050] FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] TE OE (YWW) Y = LST IGIT OF THE YER 8 EXMPLE: THIS IS N IRF70 (MOSFET)
9 Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRETION NOTES:. ONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INHES). 3. OUTLINE ONFORMS TO EI-48 & EI (2.992) MX. NOTES :. ONTROLLING IMENSION : MILLIMETER. 2. OUTLINE ONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (30) T Fax: (30) Visit us at for sales contact information. /0 9
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P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationMicro3. 1
P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationV DSS R DS(on) max Qg
l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationIRF6645 DirectFET Power MOSFET
Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationIRF9953. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.25Ω PRELIMINARY
Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRF6691PbF IRF6691TRPbF
Typical R S(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses
More informationIRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C
l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationSMPS MOSFET. V DSS R DS(on) max I D
Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationApplications DSS 150V RDS(on) typ. 12m max. 15m Benefits 85A Absolute Maximum Ratings Symbol Parameter Max. Units
P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S 1 2 8 7
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationHEXFET Power MOSFET V DSS R DS(on) max (mw) I D
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationmj I AR Avalanche Currentc 22 Linear Derating Factor
P 95823C IRF6620 l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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