G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

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1 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The is in the popular SOT-3 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. SOT-3 G S Absolute Maximum Ratings V S V GS I I M A P at T A =5 C Total Power issipation 1.3 W Linear erating Factor.1 W/ C T STG J Symbol Parameter Rating Units rain-source Voltage -6 V Gate-Source Voltage + V I at T =5 C Continuous rain Current 3-1. A A at T = 7 C Continuous rain Current A Thermal ata Pulsed rain Current 1 - A Storage Temperature Range -55 to 15 C T Operating Junction Temperature Range -55 to 15 C Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 9 C/W Ordering Information TR RoHS-compliant, halogen-free SOT-3, shipped on tape and reel, 3pcs/ reel 11 Advanced Power USA 1313I-3 1/5

2 Electrical Specifications at T j =5 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV SS rain-source Breakdown Voltage V GS =V, I =-5uA V BV SS / Tj Breakdown Voltage Temperature Coefficient Reference to 5 C, I=-1mA V/ C R S(ON) Static rain-source On-Resistance V GS =-V, I =-1.A - 5 mω V GS =, I =-1.4A mω V GS(th) Gate Threshold Voltage V S =V GS, I =-5uA V g fs Forward Transconductance V S =-V, I =-1A - - S I SS rain-source Leakage Current V S =-6V, V GS =V ua rain-source Leakage Current (T j =7 o C) V S =-4V, V GS =V ua I GSS Gate-Source Leakage V GS =±V - - ± na Q g Total Gate Charge I =-1A - 6 nc Q gs Gate-Source Charge V S =-4V nc Q gd Gate-rain ("Miller") Charge V GS = nc t d(on) Turn-on elay Time V S =-3V - - ns t r Rise Time I =-1A ns t d(off) Turn-off elay Time R G =3.3Ω, VGS=-V - - ns t f Fall Time R =3Ω ns C iss Input Capacitance V GS =V - 5 pf C oss Output Capacitance V S =-5V pf C rss Reverse Transfer Capacitance f=1.mhz pf R g Gate Resistance f=1.mhz Ω Source-rain iode Symbol Parameter Test Conditions Min. Typ. Max. Units V S Forward On Voltage I S =-1.A, V GS =V V t rr Reverse Recovery Time I S =-1A, V GS =V, ns Q rr Reverse Recovery Charge di/dt=a/µs nc Notes: 1. Pulse width limited by maximum junction temperature.. Pulse test - pulse width < 3µs, duty cycle < % 3. Surface mounted on 1 in copper pad of FR4 board, t <sec; 7 C/W when mounted on minimum copper pad. THIS PROUCT IS SENSITIVE TO ELECTROSTATIC ISCHARGE, PLEASE HANLE WITH CAUTION. USE OF THIS PROUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZE. APEC OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. 11 Advanced Power USA /5

3 Typical Electrical Characteristics -I, rain Current (A) V -7.V -5.V V G = -3.V -I, rain Current (A) 5 T A = 15 o C -V -7.V -5.V V G = - 3.V Fig 1. Typical Output Characteristics Fig. Typical Output Characteristics 5. 4 I =-1.4A 1.6 I =-1.A V G =-V R S(ON) (mω) 3 Normalized R S(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance Gate Voltage vs. Junction Temperature I S (A) T j =15 o C T j =5 o C Normalized -V GS(th) (V) V S, Source-to-rain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse iode Fig 6. Gate Threshold Voltage vs. Junction Temperature 11 Advanced Power USA 3/5

4 Typical Electrical Characteristics (cont.) 1 f=1.mhz -V GS, Gate to Source Voltage (V) 6 4 I =-1A V S = - 4 V C (pf) C iss C oss C rss Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics 1 uty factor=.5 -I (A) Single Pulse us 1ms ms ms 1s C Normalized Thermal Response (R thja ) Single Pulse P M t T uty factor = t/t Peak T j = P M x R thja + T a R thja = 7C/W t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance V S =-5V V G -I, rain Current (A) 6 4 T j =5 o C T j =15 o C Q GS Q G Q G Charge Q V GS, Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 1. Gate Charge Waveform 11 Advanced Power USA 4/5

5 Package imensions: SOT-3 1 SYMBOLS Millimeters MIN NOM MAX A A E1 E A e E e E M -- L A A M L A1 M 1. All dimensions are in millimeters.. imensions do not include mold protrusions. Marking Information: SOT-3 NGSS Product: NG = ate/lot code For details of how to convert this to standard YYWW date code format, please contact us directly. 11 Advanced Power USA 5/5