Advanced Power Electronics Corp.

Transcription

1 Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive Requirement I D G RoHS Compliant & Halogen-Free S Description AP65SL99A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-7 package is widely preferred for commercial-industrial applications The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits TO-7 (WL) G D 38A S Absolute Maximum Ratings@T j =5 o C(unless otherwise specified) Symbol Parameter Rating Units V DS Drain-Source Voltage 65 V V GS Gate-Source Voltage + V I C =5 Drain Current, V V 3 38 A I C = Drain Current, V V 3 35 A I DM Pulsed Drain Current 9 A dv/dt MOSFET dv/dt Ruggedness (V DS = 8V ) 5 V/ns P C =5 Total Power Dissipation 778 W P A =5 Total Power Dissipation 3 W E AS Single Pulse Avalanche Energy 768 mj dv/dt Peak Diode Recovery dv/dt 5 V/ns T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient /W Data & specifications subject to change without notice 55

2 AP65SL99AWL Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =5uA V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =8A mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5uA - 5 V g fs Forward Transconductance V DS =V, I D =8A S I DSS Drain-Source Leakage Current V DS =8V, V GS =V - - ua I GSS Gate-Source Leakage V GS =+V, V DS =V na Q g Total Gate Charge I D =8A nc Q gs Gate-Source Charge V DS =8V nc Q gd Gate-Drain ("Miller") Charge V GS =V - - nc t d(on) Turn-on Delay Time V DD =3V ns t r Rise Time I D =8A ns t d(off) Turn-off Delay Time R G =33Ω ns t f Fall Time V GS =V - - ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =V - - pf C rss Reverse Transfer Capacitance f=mhz - - pf R g Gate Resistance f=mhz - 8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage I S =8A, V GS =V V t rr Reverse Recovery Time I S =38A, V GS =V ns Q rr Reverse Recovery Charge di/dt=5a/µs - - µc Notes: Pulse width limited by max junction temperature Pulse test 3Limited by max junction temperature Maximum duty cycle D=75 Starting T j =5 o C, V DD =5V, L=5mH, R G =5Ω 5I SD I D, V DD BV DSS, starting T J = 5 o C THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN

3 AP65SL99AWL 8 6 T C =5 o C V 9V 8V 7V V G =6V 3 T C =5 o C 37Ω V 9V 8V 7V V G =6V Fig Typical Output Characteristics Fig Typical Output Characteristics I D =8A T C =5 o C I D =8A V G =V R DS(ON) (mω) 95 9 Normalized R DS(ON) V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o C ) Fig 3 On-Resistance vs Gate Voltage Fig Normalized On-Resistance vs Junction Temperature 6 I D =5uA 5 I S (A) 8 T j = 5 o C T j = 5 o C Normalized V GS(th) V SD (V) T j, Junction Temperature ( o C ) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3

4 AP65SL99AWL I D =8A V DS =8V f=mhz V GS, Gate to Source Voltage (V) 8 6 C (pf) 37Ω C iss C oss C rss Q G, Total Gate Charge (nc) Fig 7 Gate Charge Characteristics Fig 8 Typical Capacitance Characteristics I D (A) Operation in this area limited by R DS(ON) T C =5 o C Single Pulse us us ms ms ms DC Normalized Thermal Response (R thjc ) Duty factor=5 5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9 Maximum Safe Operating Area Fig Effective Transient Thermal Impedance 5 V DS =5V V G 5 V Q GS Q G Q GD T j =5 o C T j =5 o C Charge Q 6 8 V GS, Gate-to-Source Voltage (V) Fig Transfer Characteristics Fig Gate Charge Waveform

5 AP65SL99AWL 3 I D =ma 6 Normalized BV DSS 8 P D, Power Dissipation(W) T j, Junction Temperature ( o C) T C, Case Temperature( o C) Fig 3 Normalized BV DSS vs Junction Fig Total Power Dissipation Temperature 5 T j =5 o C R DS(ON) (mω) 5 V GS =6V 8V V GS =V Fig 5 Typ Drain-Source on State Resistance 5

6 AP65SL99AWL MARKING INFORMATION Part Number 65SL99A YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 6