mj T STG T J -55 to 150 C Operating Junction Temperature Range Parameter

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1 AP1R83GMT-HF-3 N-channel Enhancement-mode Power MOFET imple rive Requirement O-8 Compatible with Heatsink Low On-resistance R (ON) 1.9mΩ G RoH-compliant, halogen-free I 17A BV 3V escription Advanced Power MOFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK 5x6 package is specially designed for C-C converter applications, with a foot print that is compatible with the popular O-8 and offers a backside heat sink and lower package profile. G PMPAK 5x6 Absolute Maximum Ratings V V G ymbol Parameter Rating Units rain-ource Voltage 3 V Gate-ource Voltage ±2 V I at T C =25 C I at T A =25 C I at T A =7 C I M P at T C =25 C P at T A =25 C E A ingle Pulse Avalanche Energy mj T TG T J Thermal ata Continuous rain Current (Chip) 17 A Continuous rain Current 3 43 A Continuous rain Current 3 34 A Pulsed rain Current 1 3 A Total Power issipation 83.3 W Total Power issipation 5 W torage Temperature Range -55 to 15 C Operating Junction Temperature Range -55 to 15 C ymbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.5 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 25 C/W Ordering Information AP1R83GMT-HF-3TR RoH-compliant halogen-free PMPAK 5x6, shipped on tape and reel (3pcs/reel) 29 Advanced Power UA /5

2 AP1R83GMT-HF-3 Electrical pecifications at T j =25 C (unless otherwise specified) ymbol Parameter Test Conditions Min. Typ. Max. Units BV rain-ource Breakdown Voltage V G =V, I =25uA V R (ON) tatic rain-ource On-Resistance 2 V G =1V, I =3A mω V G =4.5V, I =2A mω V G(th) Gate Threshold Voltage V =V G, I =25uA 1-3 V g fs Forward Transconductance V =1V, I =2A I rain-ource Leakage Current V =3V, V G =V ua I G Gate-ource Leakage V G =±2V - - ±1 na Q g Total Gate Charge 2 I =3A nc Q gs Gate-ource Charge V =15V nc Q gd Gate-rain ("Miller") Charge V G =4.5V nc t d(on) Turn-on elay Time 2 V =15V ns t r Rise Time I =3A ns t d(off) Turn-off elay Time R G =3.3Ω, V G =1V ns t f Fall Time R =.5Ω ns C iss Input Capacitance V G =V pf C oss Output Capacitance V =25V pf C rss Reverse Transfer Capacitance f=1.mhz pf R g Gate Resistance f=1.mhz Ω ource-rain iode ymbol Parameter Test Conditions Min. Typ. Max. Units V Forward On Voltage 2 I =2A, V G =V V t rr Reverse Recovery Time 2 I =1A, V G =V, ns Q rr Reverse Recovery Charge di/dt=1a/µs nc Notes: 1.Pulse width limited by maximum junction temperature 2.Pulse test 3.urface mounted on 1 in 2 copper pad of FR4 board, t <1sec, 6 o C/W at steady state. 4.tarting T j =25 o C, V =25V, L=.1mH, R G =25Ω, I A =24A. THI PROUCT I ENITIVE TO ELECTROTATIC ICHARGE, PLEAE HANLE WITH CAUTION. UE OF THI PROUCT A A CRITICAL COMPONENT IN LIFE UPPORT OR OTHER IMILAR YTEM I NOT AUTHORIZE. APEC OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. APEC REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. 29 Advanced Power UA 2/5

3 AP1R83GMT-HF-3 Typical Electrical Characteristics I, rain Current (A) V 7.V 6.V 5.V V G = 4. V I, rain Current (A) T C =15 o C 1V 7.V 6.V 5.V V G =4.V V, rain-to-ource Voltage (V) V, rain-to-ource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I =2A I =3A V G =1V R (ON) (mω) Normalized R (ON) V G, Gate-to-ource Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 3 T j =15 o C T j =25 o C I (A) 2 1 Normalized V G(th) (V) V, ource-to-rain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse iode Junction Temperature 29 Advanced Power UA 3/5

4 AP1R83GMT-HF-3 Typical Electrical Characteristics (cont.) f=1.mhz I =3A V G, Gate to ource Voltage (V) V =15V V =18V V =24V C (pf) C iss C oss C rss Q G, Total Gate Charge (nc) V,rain-to-ource Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1 uty factor =.5 I (A) 1 1 ingle Pulse 1us 1ms 1ms 1ms C Normalized Thermal Response (R thjc ) ingle Pulse P M t T uty factor = t/t Peak T j = PM x R thjc + T c V,rain-to-ource Voltage (V) Fig 9. Maximum afe Operating Area t, Pulse Width (s) Fig 1. Effective Transient Thermal Impedance V 9% V G 4.5V Q G Q G Q G 1% V G t d(on) t r t d(off)t f Charge Q Fig 11. witching Time Waveforms Fig 12. Gate Charge Waveform 29 Advanced Power UA 4/5

5 AP1R83GMT-HF-3 Package imensions: PMPAK 5x6 Millimeters YMBOL MIN NOM MAX A b C E E1 (Reference) E2 (Reference) e H - 7 BC -.62 K (Reference) L L α(reference) - 12 Marking Information: 1. All dimensions are in millimeters. 2. imensions do not include mold protrusions. Product: AP1R83 1R83GMT YWW Package code GMT = RoH-compliant PMPAK 5x6 ate Code (YWW) Y: Last igit Of The Year WW: Work week : Lot code sequence 29 Advanced Power UA 5/5