V DS. 100% UIS Tested 100% R g Tested
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- Claribel Alannah Dixon
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1 3V PChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product ummary V 3V I (at V G =V) 6A R (ON) (at V G =V) R (ON) (at V G = 4.5V) < 5mΩ < 85mΩ % UI Tested % R g Tested Top View OIC8 Bottom View G Absolute Maximum Ratings unless otherwise noted Parameter ymbol Maximum Units rainource Voltage 3 V Gateource Voltage Continuous rain Current Pulsed rain Current C V V G I M Avalanche Current C Avalanche energy L=.1mH C I A, I AR E A, E AR A mj V pike µs 36 V Power issipation B T A =7 C T A =7 C V PIKE Junction and torage Temperature Range T J, T TG 55 to 15 C ± I P G V A W Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 31 R θja Maximum JunctiontoAmbient A teadytate Maximum JunctiontoLead teadytate R θjl Units C/W C/W C/W Rev..: March 14 Page 1 of 6
2 Electrical Characteristics (T J =25 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =25µA, V G =V 3 V I Zero Gate Voltage rain Current V =3V, V G =V 1 T J =55 C 5 I G GateBody leakage current V =V, V G = ±V ± na V G(th) Gate Threshold Voltage V =V G I =25µA V I (ON) On state drain current V G =V, V =5V 3 A R (ON) tatic rainource OnResistance V G =V, I =6A V G =4.5V, I =4A 33 5 T J =125 C mω g F Forward Transconductance V =5V, I =6A 14 V iode Forward Voltage I =1A,V G =V.8 1 V I Maximum Bodyiode Continuous Current 3.5 A YNAMIC PARAMETER C iss Input Capacitance 5 pf C oss Output Capacitance V G =V, V =15V, f=1mhz pf C rss Reverse Transfer Capacitance 65 pf R g Gate resistance V G =V, V =V, f=1mhz Ω WITCHING PARAMETER Q g (V) Total Gate Charge nc Q g (4.5V) Total Gate Charge nc V G =V, V =15V, I =6A Q gs Gate ource Charge 1.6 nc Q gd Gate rain Charge 2.2 nc t (on) TurnOn elaytime 7.5 ns t r TurnOn Rise Time V G =V, V =15V, R L =2.5Ω, 5.5 ns t (off) TurnOff elaytime R GEN =3Ω 19 ns t f TurnOff Fall Time 7 ns t rr Body iode Reverse Recovery Time I F =6A, di/dt=a/µs 11 ns Q rr Body iode Reverse Recovery Charge I F =6A, di/dt=a/µs 5.3 nc A. The value of R θja is measured with the device mounted on 1in 2 FR4 board with 2oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) =15 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =15 C. Ratings are based on low frequency and duty cycles to keep initialt J =25 C.. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on 1in 2 FR4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX) =15 C. The OA curve provides a single pulse rating. µa mω THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev..: March 14 Page 2 of 6
3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V 8V 6V 5V 3 25 V =5V I (A) 15 5 V G =4.5V 4V V G =3.5V I (A) C 25 C V (Volts) Fig 1: OnRegion Characteristics (Note E) V G (Volts) Figure 2: Transfer Characteristics (Note E) R (ON) (mω) V G =4.5V V G =V Normalized OnResistance V G =V I =6A 17 5 V G =4.5V I =4A I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction 18Temperature (Note E) 1 I =6A 1.E2 1.E1 1.E R (ON) (mω) C I (A) 1.E1 1.E2 1.E3 125 C 25 C 25 C V G (Volts) Figure 5: OnResistance vs. Gateource Voltage (Note E) 1.E4 1.E V (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev..: March 14 Page 3 of 6
4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =15V I =6A C iss V G (Volts) Capacitance (pf) 5 3 C oss Q g (nc) Figure 7: GateCharge Characteristics C rss V (Volts) Figure 8: Capacitance Characteristics I AR (A) Peak Avalanche Current.. 1. T A =15 C T A = C T A =125 C 1 Time in avalanche, t A (µs) Figure 9: ingle Pulse Avalanche capability (Note C) I (Amps) R (ON) limited T J(Max) =15 C V (Volts) Figure : Maximum Forward Biased afe Operating Area (Note F) µs µs 1ms ms s C Power (W) Pulse Width (s) Figure 11: ingle Pulse Power Rating JunctiontoAmbient (Note F) Rev..: March 14 Page 4 of 6
5 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC Z θja Normalized Transient Thermal Resistance =T on /T T J,PK =T A P M.Z θja.r θja R θja =75 C/W ingle Pulse In descending order =.5,.3,.1,.5,.2,.1, single pulse Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) P T on T Rev..: March 14 Page 5 of 6
6 Gate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig Charge RL Resistive witching Test Circuit & Waveforms t t on off td(on) tr td(off) t f Rg UT VC 9% % Id L Unclamped Inductive witching (UI) Test Circuit & Waveforms 2 E = 1/2 LI AR AR Rg VC Id BV UT I AR iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev..: March 14 Page 6 of 6
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AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general
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AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
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AONS9 V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
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