Symbol. Maximum Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current B Peak diode recovery dv/dt V DS V GS
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1 6,.34A NChannel MOFET eneral escription The is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications. By providing low R (on), C iss and C rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product ummary 7@5 I (at =).34A R (ON) (at =) < 5Ω Top iew OT3A Bottom iew Absolute Maximum Ratings unless otherwise noted Parameter ymbol Maximum rainource oltage 6 ateource oltage Continuous rain Current A,F Pulsed rain Current B Peak diode recovery dv/dt Power issipation A T A =7 C I M dv/dt Junction and torage Temperature Range T J, T T 5 to 5 C ±3.34 I T A =7 C.8 P Units A /ns W Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s 7 9 R θja Maximum JunctiontoAmbient A teadytate 5 Maximum JunctiontoLead C teadytate R θjl 63 8 Units Rev: May Page of 5
2 Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PAMETER B B / TJ I rainource Breakdown oltage Zero ate oltage rain Current Zero ate oltage rain Current I =5µA, =, T J =5 C I =5µA, =, T J =5 C I=5µA, = =6, = =48, T J =5 C / o C I atebody leakage current =, =±3 ± nα (th) ate Threshold oltage =5, I =8µA R (ON) tatic rainource OnResistance =, I =6A 54 5 Ω g F Forward Transconductance =4, I =6A.45 iode Forward oltage I =6A, =.74 I Maximum Bodyiode Continuous Current.34 A I M Maximum Bodyiode Pulsed Current.6 A YNAMIC PAMETER C iss Input Capacitance 4. 6 pf C oss Output Capacitance =, =5, f=mhz.45.6 pf C rss Reverse Transfer Capacitance.5.7 pf R g ate resistance =, =, f=mhz Ω WITCHIN PAMETER Q g Total ate Charge..5 nc Q gs ate ource Charge =, =4, I =A.3.5 nc Q gd ate rain Charge.5.8 nc t (on) TurnOn elaytime 3.8 ns t r TurnOn Rise Time =, =3, I =A, 5 ns t (off) TurnOff elaytime R =6Ω ns t f TurnOff Fall Time 3 9 ns t rr Body iode Reverse Recovery Time I F =6A,dI/dt=A/µs, =3 5 6 ns Q rr Body iode Reverse Recovery Charge I F =6A,dI/dt=A/µs, = nc A: The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with. The OA curve provides a single pulse rating. F. The current rating is based on the t s thermal resistance rating. µa THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EICE OR YTEM E NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY IIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERE THE RIHT TO IMPROE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev: May Page of 5
3 TYPICAL ELECTRICAL AN THERMAL CHACTERITIC =4 I (A) = (olts) Fig : OnRegion Characteristics I (A) C (olts) Figure : Transfer Characteristics 3.5 R (ON) (Ω) = Normalized OnResistance.5.5 = I =6A..3.4 I (A) Figure 3: OnResistance vs. rain Current and ate oltage Temperature ( C) Figure 4: OnResistance vs. Junction Temperature. I =3A.E B (Normalized) I (A).E 4.E.E3 5 C 5 C T J ( o C) Figure 5: Break own vs. Junction Temperature.E (olts) Figure 6: Bodyiode Characteristics Rev: May Page 3 of 5
4 TYPICAL ELECTRICAL AN THERMAL CHACTERITIC. (olts) =4 I =A Capacitance (pf)... C iss C oss C rss Q g (nc) Figure 7: atecharge Characteristics. (olts) Figure 8: Capacitance Characteristics I (Amps)... R (ON) limited T J(Max) =5 C µs ms ms.s s C s (olts) Figure 9: Maximum Forward Biased afe Operating Area (Note E) Power (W) T J(Max) =5 C... Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto Ambient (Note E) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T A P M.Z θja.r θja R θja =5 ingle Pulse In descending order =.5,.3,.,.5,.,, single pulse E5... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) P T on T Rev: May Page 4 of 5
5 ate Charge Test Circuit & Waveform gs Qg C UT C ds Qgs Qgd gs Ig ds RL Resistive witching Test Circuit & Waveforms ds Charge Rg gs UT C dd 9% % gs gs t d(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms ds L E = / LI B Rg Id gs gs C dd ds Id I gs UT gs iode Recovery Test Circuit & Waveforms ds UT gs Q = Idt rr ds Ig gs Isd L C dd Isd ds I F di/dt I RM t rr dd Rev: May Page 5 of 5
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V NChannel MOSFET General Description The combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters and synchronous
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3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationAOT14N50/AOB14N50/AOTF14N50
AOT4N5/AOB4N5/AOTF4N5 5V, 4A NChannel MOSFET General Description The AOT4N5 &AOB4N5 & AOTF4N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels
More informationAON7400A 30V N-Channel MOSFET
AON74A 3V NChannel MOSFET General Description The AON74A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
More informationAOD404 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited
More informationAO V Complementary MOSFET
AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
More informationAOT12N65/AOTF12N65/AOB12N65
AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.51Ω. 100% UIS Tested 100% R g Tested. Top View TO-220F. Symbol
AOT3N5/AOTF3N5 5V, 3A NChannel MOSFET General Description The AOT3N5 & AOTF3N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
More informationAOD4132 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD43 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general
More informationAOD414 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD44 uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity and body diode characteristics. This
More informationAOT2618L/AOB2618L/AOTF2618L
AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching
More informationI D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl
2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationAO7801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO78 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO78 uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages
More informationAO4433 P-Channel Enhancement Mode Field Effect Transistor
PChannel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R DS(ON) and ultralow low gate charge with a 25V gate rating. This
More informationV DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D
AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and
More informationAOW V N-Channel MOSFET
AOW5 5V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V DS I D (at V GS =V) R DS(ON) (at V
More informationAOD2910E 100V N-Channel MOSFET
AOD29E V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge ESD protected Optimized for fastswitching applications Product Summary V DS I D (at V GS =V)
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AON6 V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =.5V) V A
More informationAOD V N-Channel MOSFET
V NChannel MOSFET General Description The AOD4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due
More information600V 39A α MOS TM Power Transistor. V T j,max I DM. Symbol V DS V GS I D I AR E AR E AS P D. dv/dt T J, T STG T L
AOTF42S6 6V 39A α MOS TM Power Transistor General Description The AOTF42S6 have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and
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