AOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V)
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- Eustacia Foster
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1 5V, 5A NChannel MOSFET with Fast Recovery Diode General Description The AOTF5N5FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low R DS(on), C iss and C rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOTF5N5FDL Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) % UIS Tested % R g Tested 6V@5 5A <.8Ω Top View TO22F D Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Symbol AOTF5N5FD DrainSource Voltage 5 GateSource Voltage Continuous Drain Current T C = C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G I DM I AR E AR E AS Pulsed Drain Current C AOTF5N5FD T C =25 C G D S V DS V GS Peak diode recovery dv/dt dv/dt T C =25 C Power Dissipation B P D Derate above 25 o C Junction and Storage Temperature Range T J, T STG Maximum lead temperature for soldering purpose, /8" from case for 5 seconds T L Thermal Characteristics Parameter Symbol Maximum JunctiontoAmbient A,D R θja Maximum JunctiontoCase R θjc * Drain current limited by maximum junction temperature. I D ±3 5* 3* to 5 3 AOTF5N5FD G S Units V V A A mj mj V/ns W W/ o C C C Units C/W C/W Rev..: July 23 Page of 6
2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol STATIC PARAMETERS BV DSS BV DSS / TJ I DSS Parameter DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Conditions I D =ma, V GS =V, T J =25 C I D =ma, V GS =V, T J =5 C I D =ma, V GS =V V DS =5V, V GS =V V DS =4V, T J =25 C Min Typ Max Units V/ o C I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V, I D =25µA V R DS(ON) Static DrainSource OnResistance V GS =V, I D =2.5A.5.8 Ω g FS Forward Transconductance V DS =4V, I D =2.5A 4 S V SD Diode Forward Voltage I S =5A,V GS =V.93.6 V I S Maximum BodyDiode Continuous Current 5 A I SM Maximum BodyDiode Pulsed Current 3 A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =25V, f=mhz pf C rss Reverse Transfer Capacitance pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g Total Gate Charge 8 5 nc Q gs Gate Source Charge V GS =V, V DS =4V, I D =5A 2.7 nc Q gd Gate Drain Charge 3.8 nc t D(on) TurnOn DelayTime 8 ns t r TurnOn Rise Time V GS =V, V DS =25V, I D =5A, 33 ns t D(off) TurnOff DelayTime R G =25Ω 3 ns t f TurnOff Fall Time 26 ns t rr Body Diode Reverse Recovery Time I F =5A,dI/dt=A/µs,V DS =V ns Q rr Body Diode Reverse Recovery Charge I F =5A,dI/dt=A/µs,V DS =V.2.4 µc A. The value of R θja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =2.3A, V DD =5V, R G =25Ω, Starting T J =25 C V µa THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: July 23 Page 2 of 6
3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V V DS =4V I D (A) V 8V I D (A) 25 C 55 C 4 6V 2 V GS =5.5V 25 C V DS (Volts) Fig : OnRegion Characteristics V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (Ω) V GS =V Normalized OnResistance V GS =V I D =2.5A I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage E Temperature ( C) Figure 4: OnResistance vs. Junction Temperature E BV DSS (Normalized)..9 I S (A) E E E2 E3 E4 25 C 25 C T J ( C) Figure 5: Break Down vs. Junction Temperature E V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev..: July 23 Page 3 of 6
4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V GS (Volts) V DS =4V I D =5A Capacitance (pf) C iss C oss C rss Q g (nc) Figure 7: GateCharge Characteristics. V DS (Volts) Figure 8: Capacitance Characteristics 6. I D (Amps). R DS(ON) limited T J(Max) =5 C T C =25 C DC µs µs ms ms.s s Current rating I D (A) V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF5N5FD (Note F) T CASE ( C) Figure : Current Derating (Note B) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =3.6 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for AOTF5N5FD (Note F) Rev..: July 23 Page 4 of 6
5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 AOTF5N5FD V DS =V I F =5A di/dt=a/µs I F (A) 5 AOTF5N Trr (ns) Figure 2: Diode Recovery Characteristics Rev..: July 23 Page 5 of 6
6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev..: July 23 Page 6 of 6
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AOT144L/AOB144L 4V NChannel Rugged Planar MOSFET eneral escription The AOT144L/AOB144L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. DFN 3x3A_EP Top View. Top View
25V,5A NChannel MOFET General escription The AON7458 is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.by
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263
75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power
More informationI D (at V GS =10V) 2.5A. R DS(ON) (at V GS =10V) < 3.5Ω. 100% UIS Tested! 100% R g Tested! TO251. Top View. Bottom View S D AOU3N60 V DS
6V,.5A NChannel MOFET eneral escription The AO3N6 & AOU3N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G
AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction
More informationI D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω. 100% UIS Tested! 100% R g Tested!
AO7N6/AOI7N6 6V,7A NChannel MOFET eneral escription The AO7N6 & AOI7N6 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness
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AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)
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N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.56Ω. 100% UIS Tested! 100% R g Tested! TO251A IPAK G S
25V,8A NChannel MOFET eneral escription The AO8N25 & AOI8N25 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular
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3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1
AON746 3V NChannel MOFET General escription The AON746 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in MP and general purpose
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AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
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V 7A α MO TM Power Transistor eneral escription The AO7 & AOU7 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness
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7V NChannel MOFET eneral escription The uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose
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AO484/AOI484 4V NChannel MOFET eneral escription The AO484/AOI484 used advanced trench technology and design to provide excellent R (ON) with low gate charge. With the excellent thermal resistance of the
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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V NChannel MOFET MO TM eneral escription The AOT48L/AOB48L is fabricated with MO TM trench technology that combines excellent R (ON) with low gate charge and low Q rr.the result is outstanding efficiency
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