V T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green.

Size: px
Start display at page:

Download "V T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green."

Transcription

1 AOTF9A6L 6V, 2A αmos5 TM Power Transistor General Description Proprietary αmos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary V T j,max 7V 8A I DM R DS(ON),max <.9Ω Q g,typ E 4V 34nC 4.3mJ Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology % UIS Tested % R g Tested TO22F D G AOTF9A6L G D S S Orderable Part Number AOTF9A6L Package Type TO22F Green Form Tube Minimum Order Quantity Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Symbol V DS V GS Continuous Drain T C =25 C 2* I D Current T C = C 2* A Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G I DM I AR E AR E AS A mj mj MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt 2 V/ns Power Dissipation B T C =25 C 32 W P D Derate above 25 C.25 W/ C Junction and Storage Temperature Range T J, T STG 55 to 5 C Maximum lead temperature for soldering purpose, /8" from case for 5 seconds 3 C T L AOTF9A6L 6 ±2 Units V V Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D Maximum JunctiontoCase Symbol R qja R qjc * Drain current limited by maximum junction temperature. AOTF9A6L Units C/W C/W Rev.2.: July 27 Page of 6

2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25μA, V GS =V, T J =25 C 6 I D =25μA, V GS =V, T J =5 C 7 V BV DSS Breakdown Voltage Temperature / TJ Coefficient I D =25μA, V GS =V.59 V/ o C I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V V DS =48V, T J =25 C ma I GSS GateBody leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =5V, I D =25mA V R DS(ON) g FS V SD I S I SM C iss C oss C o(er) C o(tr) C rss R g Q g Q gs Q gd t D(on) t r t D(off) t f t rr I rm Q rr Static DrainSource OnResistance Forward Transconductance Diode Forward Voltage Maximum BodyDiode Continuous Current Maximum BodyDiode Pulsed Current C DYNAMIC PARAMETERS Input Capacitance Output Capacitance Effective output capacitance, energy related H Effective output capacitance, time related I Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge TurnOn DelayTime TurnOn Rise Time TurnOff DelayTime TurnOff Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge V GS =V, I D =7.6A V DS =V, I D =A I S =A,V GS =V V GS =V, V DS =V, f=mhz V GS =V, V DS = to 48V, f=mhz V GS =V, V DS =V, f=mhz f=mhz V GS =V, V DS =48V, I D =A V GS =V, V DS =4V, I D =A, R G =25W Peak Reverse Recovery Current I F =A, di/dt=a/ms, V DS =4V.7.9 Ω 6 S.85.2 V 2 A 8 A 935 pf 55 pf 49 pf 23 pf.25 pf 4.6 Ω 34 nc 2 nc 8.7 nc 49 ns 28 ns 5 ns 7 ns 265 ns 23 A 3.6 mc A. The value of R qja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =3.7A, V DD =5V, R G =25Ω, Starting T J =25 C. H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.: July 27 Page 2 of 6

3 BV DSS (Normalized) I S (A) R DS(ON) (W) Normalized OnResistance I D (A) I D (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V 8V 7V V DS =V V 25 C 55 C 5 6V V GS =5.5V 25 C Figure : OnRegion Characteristics V GS (Volts) Figure 2: Transfer Characteristics V GS =V 2 V GS =V I D =7.6A I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage E Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.2 E. E.9 E E2 25 C 25 C.8 E T J ( C) Figure 5: Break Down vs. Junction Temparature E V SD (Volts) Figure 6: BodyDiode Characteristics Rev.2.: July 27 Page 3 of 6

4 I D (Amps) Eoss (uj) Current rating I D (A) V GS (Volts) Capacitance (pf) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V DS =48V I D =A C iss 9 C oss 6 C rss Q g (nc) Figure 7: GateCharge Characteristics Figure 8: Capacitance Characteristics E oss Figure 9: Coss stored Energy T CASE ( C) Figure : Current Derating (Note F). R DS(ON) limited T J(Max) =5 C T C =25 C DC ms ms ms ms.s. Figure : Maximum Forward Biased Safe Operating Area for AOTF9A6L (Note F) s Rev.2.: July 27 Page 4 of 6

5 Z qjc Normalized Transient Thermal Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS D=T on /T T J,PK =T C P DM.Z qjc.r qjc R qjc =3.9 C/W In descending order D=.5,.3,.,.5,.2,., single pulse. P DM. Single Pulse T on T. E5.... Pulse Width (s) Figure 2: Normalized Maximum Transient Thermal Impedance for AOTF9A6L (Note F) Rev.2.: July 27 Page 5 of 6

6 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.2.: July 27 Page 6 of 6

AOTF380A60L/AOT380A60L

AOTF380A60L/AOT380A60L AOTF38A6L/AOT38A6L 6V a MOS5 TM NChannel Power Transistor General Description Proprietary amos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode

More information

AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET

AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V DS @

More information

600V 39A α MOS TM Power Transistor. V T j,max I DM. Symbol V DS V GS I D I AR E AR E AS P D. dv/dt T J, T STG T L

600V 39A α MOS TM Power Transistor. V T j,max I DM. Symbol V DS V GS I D I AR E AR E AS P D. dv/dt T J, T STG T L AOTF42S6 6V 39A α MOS TM Power Transistor General Description The AOTF42S6 have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and

More information

600V 37A αmos TM Power Transistor. V T j,max I DM. 100% UIS Tested 100% R g Tested S G G AOB42S60L

600V 37A αmos TM Power Transistor. V T j,max I DM. 100% UIS Tested 100% R g Tested S G G AOB42S60L AOT42S6L/AOB42S6L 6V 37A αmos TM Power Transistor General Description The AOT42S6L & AOB42S6L have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels

More information

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 AOT2S6L/AOB2S6L/AOTF2S6L/AOTF2S6 6V 2A αmos TM Power Transistor General Description The AOT2S6L & AOB2S6L & AOTF2S6L & AOTF2S6 have been fabricated using the advanced αmos TM high voltage process that

More information

AOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V)

AOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 5V, 5A NChannel MOSFET with Fast Recovery Diode General Description The AOTF5N5FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

More information

AOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V)

AOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) 6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

More information

AOL1454G 40V N-Channel AlphaSGT TM

AOL1454G 40V N-Channel AlphaSGT TM V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Driving Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant Product Summary

More information

AOTL V N-Channel AlphaSGT TM

AOTL V N-Channel AlphaSGT TM AOTL664 4V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at

More information

AOT12N65/AOTF12N65/AOB12N65

AOT12N65/AOTF12N65/AOB12N65 AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high

More information

AOTF9N V, 9A N-Channel MOSFET. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω

AOTF9N V, 9A N-Channel MOSFET. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 1.3Ω 9, 9A NChannel MOSFET General Description The AOTF9N9 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested 3V NChannel MOSFET General Description The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a high

More information

AOT12N60FD/AOB12N60FD/AOTF12N60FD

AOT12N60FD/AOB12N60FD/AOTF12N60FD 6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.

More information

I D (at V GS =10V) 2.8A. R DS(ON) (at V GS =10V) < 4.8Ω. 100% UIS Tested! 100% R g Tested!

I D (at V GS =10V) 2.8A. R DS(ON) (at V GS =10V) < 4.8Ω. 100% UIS Tested! 100% R g Tested! AODN8 8V,.8A NChannel MOSFET General Description The AODN8 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular

More information

AONE V Dual Asymmetric N-Channel MOSFET

AONE V Dual Asymmetric N-Channel MOSFET AONE363 5V Dual Asymmetric NChannel MOSFET General Description Bottom Source Technology Very Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary Q Q V DS 5V 5V I D (at V

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS AON6A 3V NChannel MOSFET General Description The AON6A uses advanced trench technology to provide excellent R DS(ON), low gate charge.this device is suitable for use as a high side switch in SMPS and general

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.51Ω. 100% UIS Tested 100% R g Tested. Top View TO-220F. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.51Ω. 100% UIS Tested 100% R g Tested. Top View TO-220F. Symbol AOT3N5/AOTF3N5 5V, 3A NChannel MOSFET General Description The AOT3N5 & AOTF3N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

More information

AOT14N50/AOB14N50/AOTF14N50

AOT14N50/AOB14N50/AOTF14N50 AOT4N5/AOB4N5/AOTF4N5 5V, 4A NChannel MOSFET General Description The AOT4N5 &AOB4N5 & AOTF4N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels

More information

AON7400A 30V N-Channel MOSFET

AON7400A 30V N-Channel MOSFET AON74A 3V NChannel MOSFET General Description The AON74A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a

More information

V DS. 100% UIS Tested 100% R g Tested. Symbol. Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C V GS I DM T A =25 C I D

V DS. 100% UIS Tested 100% R g Tested. Symbol. Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C V GS I DM T A =25 C I D V NChannel MOSFET General Description The combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters and synchronous

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested

V DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters

More information

AON7422E 30V N-Channel MOSFET

AON7422E 30V N-Channel MOSFET AON7E 3V NChannel MOSFET General Description The AON7E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and

More information

AOW V N-Channel MOSFET

AOW V N-Channel MOSFET AOW5 5V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V DS I D (at V GS =V) R DS(ON) (at V

More information

AOT2618L/AOB2618L/AOTF2618L

AOT2618L/AOB2618L/AOTF2618L AOT68L/AOB68L/AOTF68L 6V NChannel MOSFET General Description The AOT68L & AOB68L & AOTF68L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching

More information

AOD4132 N-Channel Enhancement Mode Field Effect Transistor

AOD4132 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOD43 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally

More information

V DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D

V DS I D (at V GS =-4.5V) -50A R DS(ON) (at V GS =-1.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Symbol V Gate-Source Voltage V GS I D AON73 V PChannel MOSFET General Description The AON73 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested SOIC-8 D1. Top View. S2 Pin1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested SOIC-8 D1. Top View. S2 Pin1 V Dual NChannel MOSFET General Description The AO89 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching

More information

V DS. 100% UIS Tested 100% R g Tested. Top View V GS -200 T A =25 C T A =70 C I DM I DSM I AS E AS P D P DSM T J, T STG

V DS. 100% UIS Tested 100% R g Tested. Top View V GS -200 T A =25 C T A =70 C I DM I DSM I AS E AS P D P DSM T J, T STG AON7 3V PChannel MOSFET General Description The AON7 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and

More information

AOD414 N-Channel Enhancement Mode Field Effect Transistor

AOD414 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOD44 uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity and body diode characteristics. This

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested V NChannel MOSFET General Description Low R DS(ON) Optimized for Load Switch High Current Capability ESD Protected RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS

More information

AOD454A N-Channel Enhancement Mode Field Effect Transistor

AOD454A N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal

More information

AONS V N-Channel AlphaSGT TM

AONS V N-Channel AlphaSGT TM AONS66 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant

More information

AON7264E 60V N-Channel AlphaSGT TM

AON7264E 60V N-Channel AlphaSGT TM 6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge ESD protected Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS

More information

AONS V N-Channel AlphaSGT TM

AONS V N-Channel AlphaSGT TM AONS9 V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary

More information

AOD404 N-Channel Enhancement Mode Field Effect Transistor

AOD404 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited

More information

V DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1

V DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1 3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested TO-220F. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested TO-220F. Symbol 6V,2A NChannel MOSFET General Description The FQP2N6 & FQPF2N6 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in

More information

AON V P-Channel MOSFET

AON V P-Channel MOSFET AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

AOD V N-Channel MOSFET

AOD V N-Channel MOSFET V NChannel MOSFET General Description The AOD4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due

More information

AOD2910E 100V N-Channel MOSFET

AOD2910E 100V N-Channel MOSFET AOD29E V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge ESD protected Optimized for fastswitching applications Product Summary V DS I D (at V GS =V)

More information

AON V N-Channel MOSFET

AON V N-Channel MOSFET AON6 V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS =.5V) V A

More information

AOK40N30 300V,40A N-Channel MOSFET

AOK40N30 300V,40A N-Channel MOSFET 3,4A NChannel MOSFET General Description The AOK4N3 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by

More information

AOTF409 P-Channel Enhancement Mode Field Effect Transistor

AOTF409 P-Channel Enhancement Mode Field Effect Transistor AOTF49 PChannel Enhancement Mode Field Effect Transistor General Description The AOTF49/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the

More information

AON V N-Channel MOSFET

AON V N-Channel MOSFET AON659 4V NChannel MOSFET General Description Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant Product Summary V DS

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.056Ω. 100% UIS Tested 100% R g Tested. Symbol. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.056Ω. 100% UIS Tested 100% R g Tested. Symbol. Symbol 3,6A NChannel MOSFET General Description The AOK6N3 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by

More information

AON V P-Channel MOSFET

AON V P-Channel MOSFET 3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load

More information

AOL1414 N-Channel Enhancement Mode Field Effect Transistor

AOL1414 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General Description The AOL44 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally

More information

Top View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol

Top View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

Top View S1 G1 S2 G2. Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel Symbol V DS ±12 V GS I D

Top View S1 G1 S2 G2. Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel Symbol V DS ±12 V GS I D 3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for

More information

Top View. Max n-channel Max p-channel Units Drain-Source Voltage V. Symbol V DS V GS ±12 I DM P D T J, T STG Maximum Junction-to-Lead

Top View. Max n-channel Max p-channel Units Drain-Source Voltage V. Symbol V DS V GS ±12 I DM P D T J, T STG Maximum Junction-to-Lead 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable

More information

AO V Complementary MOSFET

AO V Complementary MOSFET AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable

More information

AO4433 P-Channel Enhancement Mode Field Effect Transistor

AO4433 P-Channel Enhancement Mode Field Effect Transistor PChannel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R DS(ON) and ultralow low gate charge with a 25V gate rating. This

More information

V DS I D (at V GS =-4.5V) R DS(ON) (at V GS =-1.8V) D1 G2 Bottom

V DS I D (at V GS =-4.5V) R DS(ON) (at V GS =-1.8V) D1 G2 Bottom 2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested. Symbol. Symbol

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.37Ω. 100% UIS Tested 100% R g Tested. Symbol. Symbol 6,2A NChannel MOSFET General Description The AOK2N6 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by

More information

V DS. Pin 1 G1 D2. Maximum Drain-Source Voltage -12 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C V GS I D I DM P D

V DS. Pin 1 G1 D2. Maximum Drain-Source Voltage -12 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C V GS I D I DM P D AON289 2V Dual PChannel MOSFET General Description The AON289 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch

More information

AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor

AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor AO78 Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO78 uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages

More information

AOD380A60 600V a MOS5 TM N-Channel Power Transistor

AOD380A60 600V a MOS5 TM N-Channel Power Transistor AO38A6 6V a MO5 TM NChannel Power Transistor eneral escription Proprietary amo5 TM technology Low R (ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and

More information

I D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl

I D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl 2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for

More information

AO4430 N-Channel Enhancement Mode Field Effect Transistor

AO4430 N-Channel Enhancement Mode Field Effect Transistor AO443 NChannel Enhancement Mode Field Effect Transistor General Description The AO443/L uses advanced trench technology to provide excellent R DS(ON), shootthrough immunity, body diode characteristics

More information

V DS D1/D2 V GS I D I DM P DSM W. T A =70 C 1 Junction and Storage Temperature Range T J, T STG

V DS D1/D2 V GS I D I DM P DSM W. T A =70 C 1 Junction and Storage Temperature Range T J, T STG AON58B 3V CommonDrain Dual NChannel MOSFET General Description The AON58B uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v while

More information

AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description

AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description AON582B CommonDrain Dual NChannel Enhancement Mode Field Effect Transistor General Description Features The AON582B/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and

More information

Top View DFN5X6D PIN1 V DS V GS I D I DM I DSM I AS. 100ns V SPIKE 31 P D 12 P DSM. Junction and Storage Temperature Range T J, T STG

Top View DFN5X6D PIN1 V DS V GS I D I DM I DSM I AS. 100ns V SPIKE 31 P D 12 P DSM. Junction and Storage Temperature Range T J, T STG AON697 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS (on) at 4.5V GS Low Gate Charge High Current Capability RoHS and Halogen-Free

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.38Ω. 100% UIS Tested 100% R g Tested TO-262F. Bottom View. Top View G D S S G D S G D.

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 0.38Ω. 100% UIS Tested 100% R g Tested TO-262F. Bottom View. Top View G D S S G D S G D. AOW4N5/AOWF4N5 5V, 4A NChannel MOFET General Description The AOW4N5 & AOWF4N5 have been fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and

More information

AO882 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource

AO882 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource AO882 2V CommonDrain Dual NChannel MOSFET General Description The AO882 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v while

More information

AOE V Dual Asymmetric N-Channel AlphaMOS

AOE V Dual Asymmetric N-Channel AlphaMOS AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V

More information

Symbol Drain-Source Voltage -30 Gate-Source Voltage Continuous Drain T A =25 C T A =70 C Pulsed Drain Current C V DS V GS

Symbol Drain-Source Voltage -30 Gate-Source Voltage Continuous Drain T A =25 C T A =70 C Pulsed Drain Current C V DS V GS 3V PChannel EnhancementMode MOSFET LP347LT1G V DS 3V I D (V GS = V) 4.1A R DS(ON) (V GS = V) < 7mΩ R DS(ON) (V GS = 4.5V) < m Ω 1 3 2 FEATURES The LP347LT1G uses advanced trench technology to provide excellent

More information

AOW V N-Channel MOSFET

AOW V N-Channel MOSFET AOW9 V NChannel MOSFET General escription Trench Power MV MOSFET technology Low R S(ON) Low Gate Charge Optimized for fastswitching applications Product Summary V S I (at V GS =V) R S(ON) (at V GS =V)

More information

AOD407 P-Channel Enhancement Mode Field Effect Transistor

AOD407 P-Channel Enhancement Mode Field Effect Transistor AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent

More information

AOT460 N-Channel Enhancement Mode Field Effect Transistor

AOT460 N-Channel Enhancement Mode Field Effect Transistor AOT46 NChannel Enhancement Mode Field Effect Transistor General escription The AOT46/L uses advanced trench technology and design to provide excellent R S(ON) with low gate charge. This device is suitable

More information

AONS V N-Channel MOSFET

AONS V N-Channel MOSFET AONS3634 3V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS I D (at V GS =V)

More information

AOL1422 N-Channel Enhancement Mode Field Effect Transistor

AOL1422 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 5 G

V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View 5 G V NChannel MOFET RFET TM General Description RFET TM AON7 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device is

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D S G S D

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested TO-263 D 2 PAK D D S G S D AOT144L/AOB144L 4V NChannel Rugged Planar MOSFET eneral escription The AOT144L/AOB144L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding

More information

AO3160E 600V,0.04A N-Channel MOSFET

AO3160E 600V,0.04A N-Channel MOSFET AO36E 6,.4A NChannel MOSFET General escription Logic Level riving 4.5 ES Protection RoHS and Halogen Free Compliant Product Summary S @ T j,max 7 I (at GS =).4A R S(ON) (at GS =) < 5Ω R S(ON) (at GS =4.5)

More information

AO4728L N-Channel Enhancement Mode Field Effect Transistor

AO4728L N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor RFET TM General Description Features RFET TM uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and

More information

AOD410 N-Channel Enhancement Mode Field Effect Transistor

AOD410 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263 75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power

More information

AOD436 N-Channel Enhancement Mode Field Effect Transistor

AOD436 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction

More information

AOP608 Complementary Enhancement Mode Field Effect Transistor

AOP608 Complementary Enhancement Mode Field Effect Transistor AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a

More information

V DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V

V DS -20V I D (at V GS =-4.5V) R DS(ON) (at V GS = -1.8V) ESD protected TSOP6 D. Top View. Drain-Source Voltage -20 V 2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for

More information

AO V N-Channel MOSFET

AO V N-Channel MOSFET 3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary

More information

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251. Top View. Bottom View D G AOU7S60

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251. Top View. Bottom View D G AOU7S60 V 7A α MO TM Power Transistor eneral escription The AO7 & AOU7 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

AOT2904/AOB V N-Channel AlphaSGT TM

AOT2904/AOB V N-Channel AlphaSGT TM AOT94/AOB94 V NChannel AlphaST TM eneral escription Trench Power AlphaST TM technology Low R S(ON) Low ate Charge Optimized fastswitching applications Product Summary V S V I (at V S =V) A R S(ON) (at

More information

AON V P-Channel MOSFET

AON V P-Channel MOSFET 2V PChannel MOSFET General escription The AON447 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for

More information

AON V P-Channel MOSFET

AON V P-Channel MOSFET AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

V DS. 100% UIS Tested 100% R g Tested

V DS. 100% UIS Tested 100% R g Tested 3V PChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1 AON746 3V NChannel MOFET General escription The AON746 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in MP and general purpose

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

AOD405 P-Channel Enhancement Mode Field Effect Transistor

AOD405 P-Channel Enhancement Mode Field Effect Transistor Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:

More information

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.67Ω)@V GS =10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested

More information