AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
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- Abigayle Anthony
- 5 years ago
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1 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO49 is Pb-free (meets ROHS & Sony 9 specifications). Features Q Q V DS (V) = 3V V DS (V) = 3V I D = 8.A I D =7A (V GS = V) R DS(ON) < 7mΩ <6mΩ (V GS = V) R DS(ON) < mω <3mΩ (V GS = 4.V) SCHOTTKY V DS (V) = 3V, I F = 3A, V F <.V@A UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D G S/A Absolute Maximum Ratings T A = unless otherwise noted Parameter Drain-Source Voltage Continuous Drain Current AF Pulsed Drain Current B Power Dissipation Avalanche Current B T A = T A =7 C T A = T A =7 C Repetitive avalanche energy.3mh B 3 4 Gate-Source Voltage Junction and Storage Temperature Range SOIC-8 G D/S/K D/S/K D/S/K Q Symbol Max Q Max Q Units 3 3 V V DS V GS I D I DM P D G I AR S K A ± Q G ± E AR mj T J, T STG - to - to C S V A W A Parameter Reverse Voltage Continuous Forward Current AF Pulsed Diode Forward Current B Power Dissipation A T A = T A =7 C T A = T A =7 C Junction and Storage Temperature Range Symbol V DS I F I FM P D T J, T STG Maximum Schottky Units 3 V 3. A.8 W - to C
2 Parameter: Thermal Characteristics MOSFET Q Symbol Typ Maximum Junction-to-Ambient A t s 48 Maximum Junction-to-Ambient A R θja Steady-State 74 Maximum Junction-to-Lead C Steady-State 3 R θjl Max 6. 4 Units C/W Parameter: Thermal Characteristics MOSFET Q Symbol Typ Max Maximum Junction-to-Ambient A t s R θja Maximum Junction-to-Ambient A Steady-State 74 Maximum Junction-to-Lead C Steady-State 3 4 R θjl Units C/W Thermal Characteristics Schottky Maximum Junction-to-Ambient A t s R θja Maximum Junction-to-Ambient A Steady-State 7 Maximum Junction-to-Lead C Steady-State 3 4 R θjl C/W A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
3 Q Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa. V I D(ON) On state drain current V GS =4.V, V DS =V A R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =7.A V GS =4.V, I D =6.A 6 T J = mω g FS Forward Transconductance V DS =V, I D =7A S V SD Diode Forward Voltage I S =A.78 V I S Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS C iss Input Capacitance 9 7 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 6 pf C rss Reverse Transfer Capacitance 4 6 pf R g Gate resistance V GS =V, V DS =V, f=mhz..4.6 Ω SWITCHING PARAMETERS Q g Total Gate Charge nc Q gs Gate Source Charge V GS =4.V, V DS =V, I D =7.A.46 nc Q gd Gate Drain Charge.6 nc t D(on) Turn-On DelayTime 3.7. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.Ω, 3.. ns t D(off) Turn-Off DelayTime R GEN =3Ω 4.9 ns t f Turn-Off Fall Time. 4 ns t rr Body Diode Reverse Recovery time I F =7A, di/dt=a/µs. 6 ns Q rr Body Diode Reverse Recovery charge I F =7A, di/dt=a/µs 4. nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
4 Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 V 3.V 4.V 3V V GS =.V V DS =V 3 4 Fig : On-Region Characteristics Figure : Transfer Characteristics 3.8 R DS(ON) (mω) V GS =4.V V GS =V Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance I D =7A V GS =4.V V GS =V Temperature ( C) Figure 4: On resistance vs. Junction Temperature R DS(ON) (mω) I D =7A Figure : On resistance vs. Gate-Source Voltage I S (A).E+.E+.E-.E-.E-3.E-4.E V SD (Volts) Figure 6: Body-Diode Characteristics
5 Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V DS =V I D =7A 7 6 C iss f=mhz V GS =V 3 Capacitance (pf) 4 3 C rss C oss Q g (nc) Figure 7: Gate-Charge Characteristics 3 Figure 8: Capacitance Characteristics.. R DS(ON) limited T J(Max) = C, T A = ms ms.s µs µs Power (W) 4 3 T J(Max) = C T A =. s. s DC. Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T
6 Q Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =µa, V GS =V 3 V V R =3V.7. Zero Gate Voltage Drain Current. (Set I DSS V 3. ma by Schottky leakage) R =3V, T J = V R =3V, T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =µa.8 3 V I D(ON) On state drain current V GS =4.V, V DS =V 3 A R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =8.A V GS =4.V, I D =7A T J = mω g FS Forward Transconductance V DS =V, I D =8.A 3 S V SD Diode+Schottky Forward Voltage I S =A.4. V I S Maximum Body-Diode+Schottky Continuous Current 3. A DYNAMIC PARAMETERS C iss Input Capacitance 97 6 pf C oss Output Capacitance (FET + Schottky) V GS =V, V DS =V, f=mhz 9 pf C rss Reverse Transfer Capacitance 4 pf R g Gate resistance V GS =V, V DS =V, f=mhz Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 9. 3 nc Q g Total Gate Charge nc V GS =V, V DS =V, I D =8.A Q gs Gate Source Charge.6 nc Q gd Gate Drain Charge 4. nc t D(on) Turn-On DelayTime. 7. ns t r Turn-On Rise Time V GS =V, V DS =V, R L =.8Ω, ns t D(off) Turn-Off DelayTime R GEN =3Ω 7.3 ns t f Turn-Off Fall Time 3.3 ns t rr Body Diode + Schottky Reverse Recovery Time I F =8.A, di/dt=a/µs ns Q rr Body Diode + Schottky Reverse Recovery Charge I F =8.A, di/dt=a/µs 9.4 nc A: The value of R θja is measured with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A =. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in FR-4 board with oz. Copper, in a still air environment with T A=. The SOA curve provides a single pulse rating. F. The current rating is based on the t s junction to ambient thermal resistance rating. Rev 6: Jan 7 mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
7 Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 4V V 4.V 3.V 3 V DS =V V GS =3V Fig : On-Region Characteristics Figure : Transfer 4Characteristics 8.7 R DS(ON) (mω) 8 4 V GS =4.V.3 V GS =V, V DS =V, R L =.8Ω, R GEN =3Ω V GS =V 3 Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance I D =8.A V GS =4.V V GS =V Temperature ( C) Figure 4: On resistance vs. Junction Temperature 6.E+ I D =8.A.E+ R DS(ON) (mω) 4 3 I S (A).E-.E-.E-3.E-4 FET+SCHOTTKY Figure : On resistance vs. Gate-Source Voltage.E V SD (Volts) Figure 6: Body-Diode Characteristics (Note F)
8 Q TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Q g (nc) Figure 7: Gate-Charge Characteristics R DS(ON) limited V DS =V I D =8.A T J(Max) = C, T A = ms Capacitance (pf) Power (W) 7 ms.s V GS =V, V DS =V, R L =.8Ω, R GEN =3Ω s s µs DC µs. Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 4 3 C iss C oss FET+SCHOTTKY C rss f=mhz V GS =V 3 Figure 8: Capacitance Characteristics T J(Max) = C T A =... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =6. C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T
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Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AOTL664 4V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at
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AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 100% UIS Tested 100% R g Tested. TO-262F Bottom View. Top View G D S S G. Symbol
AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness
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July AO64 P-Channel Enhancement Mode Field Effect Transistor General escription The AO64 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as
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6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
More information600V 39A α MOS TM Power Transistor. V T j,max I DM. Symbol V DS V GS I D I AR E AR E AS P D. dv/dt T J, T STG T L
AOTF42S6 6V 39A α MOS TM Power Transistor General Description The AOTF42S6 have been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and
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AOT3N5/AOTF3N5 5V, 3A NChannel MOSFET General Description The AOT3N5 & AOTF3N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
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AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high
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9, 9A NChannel MOSFET General Description The AOTF9N9 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular
More informationUNISONIC TECHNOLOGIES CO., LTD UT4422
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
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MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
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AOT4N5/AOB4N5/AOTF4N5 5V, 4A NChannel MOSFET General Description The AOT4N5 &AOB4N5 & AOTF4N5 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels
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RoHS COMPLIANT Top View N-Channel Enhancement Mode Field Effect Transistor PDFN 5X6 8L Bottom View Product Summary V DS I D (at V GS =10V) R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100% UIS Tested
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NChannel Enhancement Mode Field Effect Transistor RFET TM General Description Features RFET TM uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and
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2V PChannel MOSFET General escription The AO649A uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
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NChannel Enhancement Mode Field Effect Transistor eneral Description The AOD4 uses advanced trench technology to provide excellent R D(ON) and low gate charge. This device is suitable for use as a load
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AONS3634 3V N-Channel MOSFET General Description Trench Power MOSFET technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS I D (at V GS =V)
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WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationV T j,max. I DM R DS(ON),max < 0.19Ω Q g,typ E 400V. 100% UIS Tested 100% R g Tested G D S S. Package Type TO-220F Green.
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More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 2.6mΩ (< 2.4mΩ ) R DS(ON) (at V GS =6V) < 3.2mΩ (< 3.0mΩ ) 100% UIS Tested 100% R g Tested TO-263
75V NChannel MOSFET eneral escription The uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
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AOT2S6L/AOB2S6L/AOTF2S6L/AOTF2S6 6V 2A αmos TM Power Transistor General Description The AOT2S6L & AOB2S6L & AOTF2S6L & AOTF2S6 have been fabricated using the advanced αmos TM high voltage process that
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6V,2A NChannel MOSFET General Description The FQP2N6 & FQPF2N6 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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