AOL1422 N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and it is suitable for use in load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Features V DS (V) = 3V I D = 85A (V GS = V) R DS(ON) < 3.7mΩ (V GS = V) R DS(ON) < 5.4mΩ (V GS = 4.5V) Rg,Ciss,Coss,Crss Tested Ultra SO-8 TM Top View D S G D Bottom tab connected to drain G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Symbol Drain-Source Voltage V DS Gate-Source Voltage Continuous Drain T C =25 C Current B,H T C = C Pulsed Drain Current C Continuous Drain Current G Power Dissipation B Power Dissipation A T A =25 C T A =7 C T C =25 C T C = C T A =25 C T A =7 C Junction and Storage Temperature Range V GS I D I DM I DSM P D P DSM T J, T STG Maximum 3 ± to 75 Units V V A W C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t s Steady-State Steady-State Symbol Typ Max R θja 5 6 R θjc.9.5 Units C/W C/W C/W

2 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =25µA, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =3V, V GS =V T J =55 C 5 µa I GSS Gate-Body leakage current V DS =V, V GS = ±6V V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA.7 3 V I D(ON) On state drain current V GS =V, V DS =5V A V GS =V, I D =2A R DS(ON) Static Drain-Source On-Resistance T J =25 C mω V GS =4.5V, I D =2A g FS Forward Transconductance V DS =5V, I D =2A 7 S V SD Diode Forward Voltage I S =A,V GS =V.69 V I S Maximum Body-Diode Continuous Current 85 A DYNAMIC PARAMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 76 pf C rss Reverse Transfer Capacitance 54 pf R g Gate resistance V GS =V, V DS =V, f=mhz.5 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 84 2 nc Q g (4.5V) Total Gate Charge nc V GS =V, V DS =5V, I D =2A Q gs Gate Source Charge 2 nc Q gd Gate Drain Charge 2 nc t D(on) Turn-On DelayTime 3 ns t r Turn-On Rise Time V GS =V, V DS =5V, R L =.75Ω, 9.8 ns t D(off) Turn-Off DelayTime R GEN =3Ω 49 ns t f Turn-Off Fall Time 6 ns t rr Body Diode Reverse Recovery Time I F =2A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =2A, di/dt=a/µs 3 nc A: The value of R θja is measured with the device in a still air environment with T A =25 C. The power dissipation P DSM and current rating I DSM are based on T J(MAX) = C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX) =75 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P (June ST 28) Rev3: Jul 28 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

3 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I D (A) V 4.5V V ` VGS=2.5V V DS (Volts) Figure : On-Region Characteristics 3.5V 3V I D (A) V DS =5V 25 C 25 C -4 C V GS (Volts) Figure 2: Transfer Characteristics 6.8 R DS(ON) (mω) V GS =4.5V V GS =V ` I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance V GS =V I D =2A V GS =4.5V I D =2A Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 4 2 I D =2A 25 C R DS(ON) (mω) C 25 C I S (A) C 25 C 2-4 C V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage V SD (Volts) Figure 6: Body-Diode Characteristics

4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =2A C iss V GS (Volts) Capacitance (pf) C rss C oss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics R DS(ON) limited T J(Max) =75 C T C =25 C I D (Amps) µs µs ms ms Power (W) T J(Max) =75 C T C =25 C. V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) DC.... Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T c +P DM.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 Power Dissipation (W) Current rating I D (A) T CASE ( C) Figure 2: Power De-rating (Note B) T CASE ( C) Figure 3: Current De-rating (Note B) T J(Max) = C T A =25 C Power (W)... Figure 4: Single Pulse Power Rating Junction-to-Ambient (Note G) Z θja Normalized Transient Thermal Resistance. In descending order D=.5,.3,.,.5,.2,., single pulse. D=T on /T Single Pulse T J,PK =T A +P DM.Z θja.r θja R θja =5 C/W T on T Figure 5: Normalized Maximum Transient Thermal Impedance (Note G) P D

6 Gate Charge Test Circuit & Waveform Qg VDC + - DUT VDC + - Vds V Qgs Qgd Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Rg DUT VDC + - Vdd 9% % t d(on) t r t d(off) t f t on t off