AOT428 N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 N-Channel Enhancement Mode Field Effect Transistor General Description The OT uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product OT is Pb-free (meets ROHS & Sony 59 specifications). OTL is a Green Product ordering option. OT and OTL are electrically identical. Features V DS (V) = 75V I D = (V GS = V) R DS(ON) < mω (V GS = V) TO- D Top View Drain Connected to Tab G S G D S bsolute Maximum Ratings T =5 C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 75 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Power Dissipation B T C =5 C Junction and Storage Temperature Range V DS V GS I DM I R E R T J, T STG ±3 T C =5 C T C = C I D 57 valanche Current C 6 Repetitive avalanche energy L=.mH C T C = C P D to 75 Units V V mj W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-mbient Steady-State R θj 6 75 C/W Maximum Junction-to-Case B Steady-State R θjc.7.3 C/W

2 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STTIC PRMETERS BV DSS Drain-Source Breakdown Voltage I D =5u, V GS =V 75 V I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V. T J =55 C 5 µ I GSS Gate-Body leakage current V DS =V, V GS =±3V n V GS(th) Gate Threshold Voltage V DS =V GS, I D =5µ 3..5 V I D(ON) On state drain current V GS =V, V DS =5V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =3 9. T J =5 C 5.5 mω g FS Forward Transconductance V DS =5V, I D =3 S V SD Diode Forward Voltage I S =, V GS =V.7 V I S Maximum Body-Diode Continuous Current 55 DYNMIC PRMETERS C iss Input Capacitance pf C oss Output Capacitance V GS =V, V DS =3V, f=mhz 3 pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V DS =V, f=mhz.5.5 Ω SWITCHING PRMETERS Q g (V) Total Gate Charge 65 5 nc Q gs Gate Source Charge V GS =V, V DS =3V, I D =3 3 3 nc Q gd Gate Drain Charge nc t D(on) Turn-On DelayTime 6 ns t r Turn-On Rise Time V GS =V, V DS =3V, R L =Ω, 63 ns t D(off) Turn-Off DelayTime R GEN =3Ω 3 ns t f Turn-Off Fall Time 3 ns t rr Body Diode Reverse Recovery Time I F =3, di/dt=/µs 3 56 ns Q rr Body Diode Reverse Recovery Charge I F =3, di/dt=/µs nc : The value of R θj is measured with the device in a still air environment with T =5 C. B. The power dissipation P D is based on T J(MX) =75 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MX) =75 C. D. The R θj is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MX) =75 C. G. The maximum current rating is limited by bond-wires. Rev : Sept 5 THIS PRODUCT HS BEEN DESIGNED ND QULIFIED FOR THE CONSUMER MRKET. PPLICTIONS OR USES S CRITICL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS RE NOT UTHORIZED. OS DOES NOT SSUME NY LIBILITY RISING OUT OF SUCH PPLICTIONS OR USES OF ITS PRODUCTS. OS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS ND RELIBILITY WITHOUT NOTICE.

3 TYPICL ELECTRICL ND THERML CHRCTERISTICS 3 5 V V DS =5V V 6 5 C I D () 5 V I D () 5 7V V GS =V, I D =3 V GS =6V 3 5 Fig : On-Region Characteristics 5 C Figure : Transfer Characteristics. R DS(ON) (mω) 9 V GS =V 7 6 I D () Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance V GS =V I D = Temperature ( C) Figure : On-Resistance vs. Junction Temperature R DS(ON) (mω) 6 5 C I D =3 5 C 6 6 Figure 5: On-Resistance vs. Gate-Source Voltage I S ().E+.E+.E+.E-.E-.E-3 5 C 5 C.E V SD (Volts) Figure 6: Body-Diode Characteristics

4 TYPICL ELECTRICL ND THERML CHRCTERISTICS 6 V DS =3V I D =3 V GS =V, I D =3 Capacitance (nf) C oss C iss Crss Q g (nc) Figure 7: Gate-Charge Characteristics Figure : Capacitance Characteristics T J(Max) =5 C, T =5 C µs 9 I D (mps) R DS(ON) limited DC µs ms ms m s Power (W) T J(Max) =75 C T =5 C s.. Figure 9: Maximum Forward Biased Safe Operating rea (Note E).... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Case (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T +P DM.Z θjc.r θjc R θjc =.3 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F)

5 TYPICL ELECTRICL ND THERML CHRCTERISTICS 5 I D (), Peak valanche Current 6 T =5 C t L I D = BV V DD V GS =V, I D =3 Power Dissipation (W) Time in avalanche, t (s) Figure : Single Pulse valanche capability T CSE ( C) Figure 3: Power De-rating (Note B) Current rating I D () T CSE ( C) Figure : Current De-rating (Note B)