Advanced Power Electronics Corp.

Transcription

1 dvanced Power Electronics Corp P6SLI Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET Fast Switching Characteristic V T j,max 65V Simple Drive Requirement R DS(ON) Ω RoHS Compliant & Halogen-Free G 3, I D 35 D Description P6SL series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-CFM package is widely preferred for all commercialindustrial through hole applications The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink S G D S TO-CFM(I) bsolute Maximum Ratings@T j =5 o C(unless otherwise specified) Symbol Parameter Rating Units V DS Drain-Source Voltage 6 V V GS Gate-Source Voltage + V I C =5 Drain Current, V V 3, 35 I C = Drain Current, V V 3, 5 I DM Pulsed Drain Current 39 dv/dt MOSFET dv/dt Ruggedness (V DS = V ) 5 V/ns P C =5 Total Power Dissipation 3 W P =5 Total Power Dissipation 9 W E S Single Pulse valanche Energy 5 7 mj dv/dt Peak Diode Recovery dv/dt 6 5 V/ns T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 39 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 55

2 P6SLI Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =5u V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =5 - - Ω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - 5 V g fs Forward Transconductance V DS =V, I D =5 - - S I DSS Drain-Source Leakage Current V DS =V, V GS =V - - u I GSS Gate-Source Leakage V GS =+V, V DS =V n Q g Total Gate Charge I D = nc Q gs Gate-Source Charge V DS =V nc Q gd Gate-Drain ("Miller") Charge V GS =V nc t d(on) Turn-on Delay Time V DD =3V - - ns t r Rise Time I D =5 - - ns t d(off) Turn-off Delay Time R G =33Ω ns t f Fall Time V GS =V ns C iss Input Capacitance V GS =V - 3 pf C oss Output Capacitance V DS =V pf C rss Reverse Transfer Capacitance f=mhz pf R g Gate Resistance f=mhz Ω Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage I S =5, V GS =V - - V t rr Reverse Recovery Time I S =3, V GS =V ns Q rr Reverse Recovery Charge di/dt=5/µs µc Notes: Pulse width limited by max junction temperature Pulse test 3Limited by max junction temperature Maximum duty cycle D=75 Ensure that the junction temperature does not exceed T Jmax 5Starting T j =5 o C, V DD =5V, L=5mH, R G =5Ω 6I SD I D, V DD BV DSS, starting T J = 5 o C THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN

3 P6SLI 3 I D, Drain Current () 6 T C =5 o C V 9V V 7V I D, Drain Current () 6 T C =5 o C 37Ω V 9V V 7V V G =6V V G =6V 3 3 Fig Typical Output Characteristics Fig Typical Output Characteristics 36 I D =5 T C =5 o C I D =5 V G =V R DS(ON) (mω) 3 Normalized R DS(ON) V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o C ) Fig 3 On-Resistance vs Gate Voltage Fig Normalized On-Resistance vs Junction Temperature I D =5u 5 I S () 6 T j = 5 o C T j = 5 o C Normalized V GS(th) 5 6 V SD (V) T j, Junction Temperature ( o C ) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3

4 P6SLI V GS, Gate to Source Voltage (V) 6 I D =5 V DS =V C (pf) 37Ω f=mhz C iss C oss C rss 3 5 Q G, Total Gate Charge (nc) 6 Fig 7 Gate Charge Characteristics Fig Typical Capacitance Characteristics I D () Operation in this area limited by R DS(ON) T C =5 o C Single Pulse us us ms ms ms s DC Normalized Thermal Response (R thjc ) Duty factor=5 5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig Effective Transient Thermal Impedance I D =m P D, Power Dissipation (W) 3 Normalized BV DSS T C, Case Temperature ( o C ) T j, Junction Temperature ( o C) Fig Total Power Dissipation Fig Normalized BV DSS vs Junction Temperature

5 MRKING INFORMTION P6SLI Part Number 6SL YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5