Features. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
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1 Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche tested RoHS compliant device SMK0160IS Advanced N-Ch Power MOSFET Ordering Information Part Number Marking Package G D S SMK0160IS SMK0160 I-PAK (Short Lead) I-PAK Marking Information SMK 0160 YWWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (T T C =25 C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DS SS 600 V Gate-source voltage V GS SS ±30 V Drain current (DC) * I D T c =25 C Tc=100 C A A Drain current (Pulsed) * I DM 4 A Single pulsed avalanche energy (Note 2) E AS 49 mj Repetitive avalanche current (Note 1) I AR 1 A Repetitive avalanche energy (Note 1) E AR 2. 5 mj Power dissipation PD 28 W Junction temperature TJ 150 C Storage temperature range T st tg -55~ 150 C * Limited only maximum junction temperature Rev. date: 22-MAR-12 KSD-T6Q of 8
2 Thermal Characteristics SMK0160IS Characteristic Symbol Rating Unit Thermal resistance, junction to case R th(j-c) Max Thermal resistance, junction to ambient R th(j-a) Max C/W Electrical Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS I D =250uA, V GS = V Gate threshold voltage V GS(th) I D =250uA, V DS =V GS 2-4 V Drain-source cut-off current I DSS V DS =600V, V GS =0V ua Gate leakage current I GSS V DS =0V, V GS =±30V - - ±100 na Drain-source on-resistance R DS(ON) V GS =10V, I D =0.5A Ω Forward transfer conductance (Note 3) g fs V DS =10V, I D =0.5A S Input capacitance C iss Output capacitance C oss V DS =25V, V GS =0V, f=1mhz Reverse transfer capacitance C rss Turn-on delay time (Note 3,4) t d(on) Rise time (Note 3,4) t r V DD =300V, I D =1A, Turn-off delay time (Note 3,4) t d(off) R G =25Ω Fall time (Note 3,4) t f (Note 3,4) Q g Total gate charge Gate-source charge (Note 3,4) Q gs V DS =480V, V GS =10V, I D =1A Gate-drain charge (Note 3,4) Q gd pf ns nc Source-Drain Diode Ratings and Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode A Source current (Pulsed) I SM in the MOSFET A Forward voltage V SD V GS =0V, I S =1A V Reverse recovery time (Note 3,4) t rr I S =1A, V GS =0V ns Reverse recovery charge (Note 3,4) Q rr di F /dt=100a/us uc Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=90mH, I AS =1A, V DD =50V, R G =25Ω, Starting T J =25 C 3. Pulse test: Pulse width 300us, Duty cycle 2% 4. Essentially independent of operating temperature typical characteristics 2 of 8
3 Electrical Characteristics Curves Fig. 1 I D - V DS Fig. 2 I D - V GS - Fig. 3 R DS(on) - I D Fig. 4 I S - V SD Fig. 5 Capacitance - V DS Fig. 6 V GS - Q G 3 of 8
4 Fig. 7 V DSS - T J Fig. 8 R DS(on) - T J C C Fig. 9 I D - T a Fig. 10 Safe Operating Area * 4 of 8
5 Fig. 11 Gate Charge Test Circuit & Waveform SMK0160IS Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 E AS Test Circuit & Waveform 5 of 8
6 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform 6 of 8
7 Package Outline Dimensions 7 of 8
8 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. 8 of 8
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HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
More information-55 to 150 C Operating Junction Temperature Range -55 to 150 C. Parameter
N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Performance R DS(ON) 25mΩ G RoHS-compliant, halogen-free I D 28A S BV DSS 30V Description Advanced Power
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More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationTO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
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UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
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More informationT C =25 unless otherwise specified
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