Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V
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1 Features High ruggedness Low R DS(ON) (Typ 0.36Ω)@V GS =10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings Symbol SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Parameter Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V I D Continuous drain current (@T C =25 o C) 10* A Continuous drain current (@T C =100 o C) 6.3* A I DM Drain current pulsed (note 1) 40 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 270 mj E AR Repetitive avalanche energy (note 1) 60 mj dv/dt MOSFET dv/dt ruggedness (@VDS=0~400V) 30 V/ns dv/dt Peak diode recovery dv/dt (note 3) 20 V/ns P D Total power dissipation (@T C =25 o C) W Derating factor above 25 o C W/oC T STG, T J Operating junction temperature & storage temperature -55 ~ o C T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Unit 300 o C Value BV DSS : 650V TO220 TO220F TO251N TO252 TO262 TO220SF R thjc Thermal resistance, Junction to case o C/W R thja Thermal resistance, Junction to ambient o C/W I D : 10A R DS(ON) :0.36 Ω Item Sales Type Marking Package Packaging 1 SW P 10N65K SW10N65K TO-220 TUBE 2 SW F 10N65K SW10N65K TO-220F TUBE 3 SW N 10N65K SW10N65K TO-251N TUBE 4 SW D 10N65K SW10N65K TO-252 REEL 5 SW U 10N65K SW10N65K TO-262 TUBE 6 SW MN 10N65K SW10N65K TO-220SF TUBE Unit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
2 Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS =0V, I D =250uA 650 V ΔBV DSS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.65 V/ o C I DSS Drain to source leakage current V DS =650V, V GS =0V 1 ua V DS =520V, T C =125 o C 50 ua Gate to source leakage current, forward V GS =30V, V DS =0V 100 na I GSS Gate to source leakage current, reverse V GS =-30V, V DS =0V -100 na On characteristics V GS(TH) Gate threshold voltage V DS =V GS, I D =250uA 2 5 V R DS(ON) Drain to source on state resistance V GS =10V, I D =5A Ω G fs Forward transconductance V DS =30V, I D =5A 6.8 S Dynamic characteristics C iss Input capacitance 1021 C oss Output capacitance V GS =0V, V DS =200V, f=1mhz 50 pf C rss Reverse transfer capacitance 2.2 t d(on) Turn on delay time 16 t r t d(off) Rising time Turn off delay time V DS =325V, I D =10A, R G =25Ω, V GS =10V (note 4,5) t f Fall time 27 Q g Total gate charge 29 Q gs Gate-source charge V DS =520V, V GS =10V, I D =10A (note 4,5) 7 Q gd Gate-drain charge 14 ns nc Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 10 A I SM Pulsed source current diode in the MOSFET 40 A V SD Diode forward voltage drop. I S =10A, V GS =0V 1.4 V t rr Reverse recovery time I S =10A, V GS =0V, 266 ns Q rr Reverse recovery charge di F /dt=100a/us 3.6 uc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =60mH, I AS =3A, V DD = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 10A, di/dt = 100A/us, V DD BV DSS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
3 Fig. 1. On-state characteristics Fig. 2. Transfer Characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
4 Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9 Maximum safe operating area(to-220) Fig. 10. Maximum safe operating area(to-220f) Fig. 11. Maximum safe operating area(to-251n) Fig. 12. Maximum safe operating area(to-252) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
5 Fig. 13. Maximum safe operating area(to-262) Fig. 14. Maximum safe operating area(to-220sf) Fig. 15. Transient thermal response curve(to-220) Fig. 16. Transient thermal response curve(to-220f) SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
6 Fig. 17. Transient thermal response curve(to-251n) Fig. 18. Transient thermal response curve(to-252) Fig. 19. Transient thermal response curve(to-262) SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
7 Fig. 20. Transient thermal response curve(to-220sf) Fig. 21. Gate charge test circuit & waveform Fig. 22. Switching time test circuit & waveform R L V DS 90% V DS V DD V IN 10% 10% 10VIN R GS DUT t d(on) t r t d(off) t f t ON t OFF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
8 Fig. 23. Unclamped Inductive switching test circuit & waveform Fig. 24. Peak diode recovery dv/dt test circuit & waveform DUT + V DS V GS (DRIVER) 10V I S - L I S (DUT) di/dt V DS I RM R G V DD Diode reverse current 10V GS Same type as DUT V DS (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site ( * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Aug Rev /8
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800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
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HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
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UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
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UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMMD65R900Q 650V 0.90Ω N-channel MOSFET
MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
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UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
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UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
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HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationT J =25 unless otherwise specified W W/ T J, T STG Operating and Storage Temperature Range -55 to +150
500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationFeatures. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM
Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
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HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
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HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
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UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
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