Preliminary TSM9N50 500V N-Channel Power MOSFET

Transcription

1 TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 500 V GS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features Low R DS(ON) V GS = 10V Low gate charge 63nC (Typ.) Low Crss 120pF (Typ.) Fast Switching Ordering Information Block Diagram Part No. Package Packing TSM9N50CZ C0 TO pcs / Tube TSM9N50CI C0 ITO pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ±30 V Continuous Drain Current Ta = 25ºC 9 A I D Ta = 100ºC 5.1 A Pulsed Drain Current* I DM 36 A Single Pulse Avalanche Energy (Note 2) E AS 510 mj Avalanche Current (Repetitive) (Note 1) I AR 8 A Repetitive Avalanche Energy (Note 1) E AR 13 mj Total Power = 25 o C P DTOT 125 W Operating Junction Temperature T J 150 ºC Storage Temperature Range T STG -55 to +150 o C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨ JC 3.1 Thermal Resistance - Junction to Ambient RӨ JA 62.5 Notes: Surface mounted on FR4 board t 10sec o C/W o C/W 1/7 Version: Preliminary

2 Electrical Specifications (Ta = 25 o C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS V Drain-Source On-State Resistance V GS = 10V, I D = 4.8A R DS(ON) Ω Gate Threshold Voltage V DS = V GS, I D = 250uA V GS(TH) V Zero Gate Voltage Drain Current V DS = 500V, V GS = 0V I DSS ua Gate Body Leakage V GS = ±30V, V DS = 0V I GSS ±100 na Forward Transfer Conductance V DS = 50V, I D = 4.8A g fs S Dynamic b Total Gate Charge Q g V DS = 400V, I D = 9A, Gate-Source Charge Q gs V GS = 10V Gate-Drain Charge Q gd Input Capacitance C iss V DS = 25V, V GS = 0V, Output Capacitance C oss f = 1.0MHz Reverse Transfer Capacitance C rss Switching c Turn-On Delay Time t d(on) Turn-On Rise Time V DD = 250V, I D = 9A, t r Turn-Off Delay Time R G = 9.1Ω t d(off) Turn-Off Fall Time Source Drain Diode t f Source-drain Current I SD A Diode Forward Voltage I S = 9A, V GS = 0V V SD V Reverse Recovery Time V GS = 0V, I S = 9A, t fr ns Reverse Recovery Charge Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. V DD = 50V, I AS =9A, L=5.7mH, R G =9.1Ω, Starting T J =25ºC 3. Pulse test: pulse width 300uS, duty cycle 2% 4. Essentially Independent of Operating Temperature di F /dt = 100A/us Q fr uc nc pf ns 2/7 Version: Preliminary

3 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E AS Test Circuit & Waveform 3/7 Version: Preliminary

4 Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary

5 TO-220 Mechanical Drawing TO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A B C D E F G H J K L M N O P /7 Version: Preliminary

6 ITO-220 Mechanical Drawing ITO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A B 6.20 (typ.) (typ.) C 2.20 (typ.) (typ.) D 1.40 (typ.) (typ.) E F G H I J K L 1.15 (typ.) (typ.) M N O /7 Version: Preliminary

7 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: Preliminary