N-Channel Power MOSFET 40V, 121A, 3.3mΩ

Transcription

1 TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature Compliant to RoHS directive 2/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC APPLICATIONS BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification PDFN56 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 4 V R DS(on) (max) V GS = V 3.3 V GS = 4.5V 4 mω Q g 4 nc Note: MSL (Moisture Sensitivity Level) per J-STD-2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 4 V Gate-Source Voltage V GS ±2 V Continuous Drain Current (Note ) T C = 25 C 2 I D T A = 25 C 2 Pulsed Drain Current I DM 484 A Single Pulse Avalanche Current (Note 2) I AS 34 A Single Pulse Avalanche Energy (Note 2) E AS 73 mj Total Power Dissipation Total Power Dissipation T C = 25 C P D 7 T C = 25 C 36 T A = 25 C P D T A = 25 C Operating Junction and Storage Temperature Range T J, T STG - 55 to +75 C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC.4 C/W Junction to Ambient Thermal Resistance R ӨJA 48 C/W Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. The R ӨJA limit presented here is based on mounting on a in 2 pad of 2 oz copper. 3. A W W Version: B84

2 TSM33NB4LCR ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = V, I D = 25µA BV DSS V Gate Threshold Voltage V GS = V DS, I D = 25µA V GS(TH) V Gate-Source Leakage Current V GS = ±2V, V DS = V I GSS ± na Drain-Source Leakage Current Drain-Source On-State Resistance (Note 3) V GS = V, V DS = 4V V GS = V, V DS = 4V T J = 25 C V GS = V, I D = 2A I DSS R DS(on) V GS = 4.5V, I D = 9A Forward Transconductance (Note 3) V DS = V, I D = 2A g fs S (Note 4) Dynamic Total Gate Charge V GS = V, V DS = 2V, I D = 2A Q g Total Gate Charge Q g V GS = 4.5V, V DS = 2V, Gate-Source Charge Q gs I D = 9A Gate-Drain Charge Q gd Input Capacitance C iss V GS = V, V DS = 2V Output Capacitance C oss f =.MHz Reverse Transfer Capacitance C rss Gate Resistance f =.MHz R g Ω Switching (Note 4) Turn-On Delay Time t d(on) Turn-On Rise Time V GS = V, V DS = 2V, t r Turn-Off Delay Time I D = 2A, R G = 2Ω t d(off) Turn-Off Fall Time t f Source-Drain Diode Forward Voltage (Note 3) V GS = V, I S = 2A V SD V Reverse Recovery Time I S = 2A, t rr ns Reverse Recovery Charge di/dt = A/μs Q rr nc Notes:. Silicon limited current only. 2. L =.3mH, V GS = V, V DD = 25V, R G = 25Ω, I AS = 34A, Starting T J = 25 C 3. Pulse test: Pulse Width 3µs, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM33NB4LCR RLG PDFN56 2,5pcs / 3 Reel µa mω nc pf ns 2 Version: B84

3 (Normalized) R DS(on), Drain-Source On-Resistance (Ω) ID, Drain Current (A) ID, Drain Current (A) TSM33NB4LCR CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 4 Output Characteristics 4 Transfer Characteristics V GS =V V GS =7V V GS =5V V GS =4.5V V GS =4V V GS =3.5V V GS =3V V DS, Drain to Source Voltage (V) V GS, Gate to Source Voltage (V).6 On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge V GS =4.5V V GS =V I D, Drain Current (A) VGS, Gate to Source Voltage (V) V DS =2V I D =2A Q g, Gate Charge (nc) RDS(on), Drain-Source On-Resistance On-Resistance vs. Junction Temperature V GS =V I D =2A T J, Junction Temperature ( C) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage I D =2A V GS, Gate to Source Voltage (V) 3 Version: B84

4 IS, Reverse Drain Current (A) ID, Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM33NB4LCR CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 6 Capacitance vs. Drain-Source Voltage.2 BV DSS vs. Junction Temperature CRSS CISS COSS BVDSS (Normalized)..9 I D =5mA V DS, Drain to Source Voltage (V) T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage R DS(ON) SINGLE PULSE R ӨJC =.4 C/W T C =25 C. V DS, Drain to Source Voltage (V) V SD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC. Duty=.5 Duty=.2 Duty=. Duty=.5 Duty=.2 Duty=. Single SINGLE PULSE R ӨJC =.4 C/W Notes: Duty = t / t 2 T J = T C + P DM x Z ӨJC x R ӨJC..... t, Square Wave Pulse Duration (sec) 4 Version: B84

5 TSM33NB4LCR PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 33NB4L GYWWF TSC 33NB4L GYWWF G = Halogen Free Y = Year Code WW = Week Code (~52) F = Factory Code 5 Version: B84

6 TSM33NB4LCR Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B84