P-Channel Power MOSFET -40V, -22A, 15mΩ

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1 TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS -4 V R DS(on) V GS = -V 5 (max) V GS = -4.5V 2 mω Q g 23 nc APPLICATIONS POL Load Switch Motor Drives SOP-8 Note: MSL (Moisture Sensitivity Level) per J-STD-2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -4 V Gate-Source Voltage V GS ±2 V Continuous Drain Current (Note ) T C = 25 C -22 I D T A = 25 C -9 Pulsed Drain Current I DM -88 A Single Pulse Avalanche Current (Note 2) I AS -27 A Single Pulse Avalanche Energy (Note 2) E AS 9 mj Total Power Dissipation Total Power Dissipation T C = 25 C P D 2.5 T C = 25 C 2.5 T A = 25 C P D 2.2 T A = 25 C.4 Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC C/W Junction to Ambient Thermal Resistance R ӨJA 57 C/W Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. A W W Version: A6

2 TSM5P4LCS ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = V, I D = -25µA BV DSS V Gate Threshold Voltage V GS = V DS, I D = -25µA V GS(TH) V Gate-Source Leakage Current V GS = ±2V, V DS = V I GSS ± na Drain-Source Leakage Current Drain-Source On-State Resistance (Note 3) V GS = V, V DS = -4V V GS = V, V DS = -32V T J = 25 C V GS = -V, I D = -9A I DSS R DS(on) V GS = -4.5V, I D = -8A Forward Transconductance (Note 3) V DS = -5V, I D = -9A g fs S (Note 4) Dynamic Total Gate Charge V GS = -V, V DS = -2V, I D = 9A Q g Total Gate Charge Q g V GS = -4.5V, Gate-Source Charge Q gs V DS = -2V, I D = -9A Gate-Drain Charge Q gd Input Capacitance C iss V GS = V, V DS = -2V Output Capacitance C oss f =.MHz Reverse Transfer Capacitance C rss Gate Resistance f =.MHz R g Ω Switching (Note 4) Turn-On Delay Time t d(on) Turn-On Rise Time V GS = -V, V DS = -2V, t r Turn-Off Delay Time I D = -9A, R G = 2Ω, t d(off) Turn-Off Fall Time t f Source-Drain Diode Forward Voltage (Note 3) V GS = V, I S = -9A V SD V Reverse Recovery Time I S = -9A, t rr ns Reverse Recovery Charge di/dt = A/μs Q rr nc Notes:. Silicon limited current only. 2. L =.3mH, V GS = -V, V DD = -25V, R G = 25Ω, I AS = -27A, Starting T J = 25 C 3. Pulse test: Pulse Width 3µs, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION µa mω nc pf ns PART NO. PACKAGE PACKING TSM5P4LCS RLG SOP-8 2,5pcs / 3 Reel 2 Version: A6

3 (Normalized) -ID, Drain Current (A) -ID, Drain Current (A) TSM5P4LCS CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 3 Output Characteristics 3 Transfer Characteristics 24 8 V GS =-V V GS =-7V V GS =-5V V GS =-4.5V V GS =-4V V GS =-3.5V V GS =-3V V DS, Drain to Source Voltage (V) V GS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current V GS =-4.5V V GS =-V I D, Drain Current (A) -VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge V DS =-2V I D =-9A Q g, Gate Charge (nc) RDS(on), Drain-Source On-Resistance On-Resistance vs. Junction Temperature V GS =-V I D =-9A T J, Junction Temperature ( C) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage I D =-9A V GS, Gate to Source Voltage (V) 3 Version: A6

4 -ID, Drain Current (A) -IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM5P4LCS CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Capacitance vs. Drain-Source Voltage BV DSS vs. Junction Temperature I D =-ma CISS BVDSS (Normalized)..9 5 COSS CRSS V DS, Drain to Source Voltage (V) T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage R DS(ON) SINGLE PULSE R ӨJC = C/W T C =25 C.. -V DS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case -V SD, Body Diode Forward Voltage (V) Normalized Effective Transient Thermal Impedance, ZӨJC. Duty=.5 Duty=.2 Duty=. Duty=.5 Duty=.2 Duty=. Single..... t, Square Wave Pulse Duration (sec) SINGLE PULSE R ӨJC = C/W Notes: Duty = t / t 2 T J = T C + P DM x Z ӨJC x R ӨJC 4 Version: A6

5 TSM5P4LCS PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOP-8 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 5P4L YML Y = Year Code M = Month Code O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (~9, A~Z) 5 Version: A6

6 TSM5P4LCS Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A6

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