TSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics

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1 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 18A,600V,Max.R DS(on) =0.38 = Low gate charge(typical 57nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 600 V Gate-Source Voltage ± 30 V I D T C = 25 18* A Drain Current T C = * A I DM Pulsed Drain Current 72* A E AS Single Pulsed Avalanche Energy (Note 2) 884 mj E AR Repetitive Avalanche Energy (Note 1) 4 mj I AR Repetitive avalanche current (Note 1) 18 A P D Power Dissipation (T C = 25 ) 40 W T J, T STG Operating and Storage Temperature Range -55 to +150 * Drain current limited by maximum junction temperature. Thermal Resistance Characteristics Symbol Parameter Value Units R θjc Thermal Resistance,Junction-to-Case 3.13 /W R θja Thermal Resistance,Junction-to-Ambient 62.5 /W

2 Electrical Characteristics T C =25 unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 250 ua μa V R DS(ON) Static Drain-Source On-Resistance = 10 V, I D = 9A Ω g fs Forward transfer conductance(note 3) = 10 V, I D = 9A (Note 3) S Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 ua μa V I DSS Zero Gate Voltage Drain Current = 600 V, = 0 V = 600 V, T C = ua I GSSF Gate-Body Leakage Current,Forward = 30 V, = 0 V na na I GSSR Gate-Body Leakage Current,Reverse =- 30 V, = 0 V na na Dynamic Characteristics C iss Input Capacitance pfpf C oss Output Capacitance = 25 V, = 0 V, f = 1.0 MHz pfpf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time = 300 V, I D = 18A, ns t r Turn-On Rise Time R G = 25 Ω nsns t d(off) Turn-Off Delay Time (Note 3,4) nsns t f Turn-Off Fall Time ns ns Q g Total Gate Charge = 480 V, I D = 18A, nc Q gs Gate-Source Charge = 10 V nc Q (Note 3,4) gd Gate-Drain Charge nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current V SD Source-Drain Diode Forward Voltage I S = 18A, = 0 V V t rr Reverse Recovery Time I S =18A, = 0 V nsns Q rr Reverse Recovery Charge di F /dt = 100 A/μs (Note 3,4) uc Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=5mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25 3. Pulse test: Pulse width 300us, Duty cycle 2% 4. Essentially independent of operating temperature typical characteristics A

3 Typical Characteristics

4 Typical Characteristics

5 12V 200nF 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as Q g Q gs Q gd 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- L L I 2 2 AS I D BS I AS R G I D (t) (t) t p Time

6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop

7 Package Dimension TO-220F