N- and P-Channel 60V (D-S) Power MOSFET

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1 TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in accordance to WEEE 22/96/EC Halogen-free according to IEC APPLICATIONS DC-DC Converters Power Routing Motor Drives KEY PERFORMANCE PARAMETERS PARAMETER TYPE VALUE UNIT R DS(on) (max) V DS 6-6 V GS = V 3 V GS =.5V V GS = -V 6 V GS = -.5V Q g V mω nc PDFN56 Dual Note: MSL (Moisture Sensitivity Level) per J-STD-2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL UNIT Drain-Source Voltage V DS 6-6 V Gate-Source Voltage V GS ±2 ±2 V Continuous Drain Current (Note ) T C = 25 C 2 - I D T A = 25 C 5. - Pulsed Drain Current I DM A Single Pulse Avalanche Current (Note 2) I AS A Single Pulse Avalanche Energy (Note 2) E AS 2 2 mj Total Power Dissipation Total Power Dissipation T C = 25 C P D T C = 25 C.. T A = 25 C P D 2 2 T A = 25 C.. Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance Junction to Case R ӨJC 3. Thermal Resistance Junction to Ambient R ӨJA 6 Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. A W W C/W Version: A7

2 TSM652CR ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Drain-Source On-State (Note 3) Resistance V GS = V, I D = 25µA BV DSS V GS = V, I D = -25µA V GS = V DS, I D = 25µA V GS(TH) V V GS = V DS, I D = -25µA V GS = ±2V, V DS = V ± na I GSS V GS = ±2V, V DS = V ± na V GS = V, V DS = 6V V GS = V, V DS = 6V T J = 25 C V GS = V, V DS = -6V V GS = V, V DS = -6V T J = 25 C I DSS R DS(on) V GS = V, I D = 5.A V GS =.5V, I D =.9A V GS = -V, I D = -A V GS = -.5V, I D = -3.2A Forward V DS = 5V, I D = 5.A Transconductance (Note 3) g fs V DS = -5V, I D = -A (Note ) Dynamic Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 3V, I D = 5.A V DS = -3V, I D = -A V DS = 3V, I D =.9A V DS = -3V, I D = -3.2A V GS = V, V DS = 3V f =.MHz V GS = V, V DS = -3V f =.MHz Q g(vgs=v) Q g(vgs=-v) Q g(vgs=.5v) Q g(vgs=-.5v) Q gs Q gd C iss C oss Gate Resistance f =.MHz R g C rss V µa mω S nc pf Ω 2 Version: A7

3 TSM652CR ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Switching (Note ) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode V GS = V, V DS = 3V, I D = 5.A, R G = 2Ω V GS = -V, V DS = -3V, I D = -A, R G = 2Ω t d(on) t r t d(off) t f Forward Voltage (Note 3) V GS = V, I S = 5.A V SD V GS = V, I S = -A Reverse Recovery Time t rr I S = 5.A, di/dt = A/μs Reverse Recovery Q rr Charge I S = -A, di/dt = A/μs Notes:. Silicon limited current only. 2. : L =.3mH, V GS = V, V DD = 25V, R G = 25Ω, I AS = 2.7A, Starting T J = 25 C : L =.3mH, V GS = -V, V DD = -25V, R G = 25Ω, I AS = -2.7A, Starting T J = 25 C 3. Pulse test: Pulse Width 3µs, duty cycle 2%.. Switching time is essentially independent of operating temperature. ns V ns nc ORDERING INFORMATION PART NO. PACKAGE PACKING TSM652CR RLG PDFN56 Dual 2,5pcs / 3 Reel 3 Version: A7

4 (Normalized) ID, Drain Current (A) ID, Drain Current (A) TSM652CR CHARACTERISTICS CURVES (N-Channel) (T A = 25 C unless otherwise noted) Output Characteristics V GS =V V GS =7V V GS =5V V GS =.5V V GS =V V GS =3.5V Transfer Characteristics V GS =3V V DS, Drain to Source Voltage (V) 2 3 V GS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current V GS =.5V V GS =V I D, Drain Current (A) VGS, Gate to Source Voltage (V) 6 2 Gate-Source Voltage vs. Gate Charge V DS =3V I D =5.A Q g, Gate Charge (nc) RDS(on), Drain-Source On-Resistance On-Resistance vs. Junction Temperature V GS =V I D =5.A T J, Junction Temperature ( C) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage I.2 D =5.A V GS, Gate to Source Voltage (V) Version: A7

5 ID, Drain Current (A) IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM652CR CHARACTERISTICS CURVES (N-Channel) (T A = 25 C unless otherwise noted) 6 Capacitance vs. Drain-Source Voltage.2 BV DSS vs. Junction Temperature CISS CRSS COSS V DS, Drain to Source Voltage (V) BVDSS (Normalized) I D =ma T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage R DS(ON) SINGLE PULSE R ӨJC =3. C/W T C =25 C V DS, Drain to Source Voltage (V) V SD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC. Duty=.5 Duty=.2 Duty=. Duty=.5 Duty=.2 Duty=. Single..... t, Square Wave Pulse Duration (sec) SINGLE PULSE R ӨJC =3. C/W Notes: Duty = t / t 2 T J = T C + P DM x Z ӨJC x R ӨJC 5 Version: A7

6 -ID, Continuous Drain Current (A) (Normalized) -ID, Continuous Drain Current (A) TSM652CR CHARACTERISTICS CURVES (P-Channel) (T A = 25 C unless otherwise noted) 2 6 V GS =-V V GS =-7V V GS =-6V V GS =-5V V GS =-.5V Output Characteristics V GS =-V 2 6 Transfer Characteristics 2 V GS =-3.5V 2 25 V GS =-3V 2 3 -V DS, Drain to Source Voltage (V) V GS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) RDS(on), Drain-Source On-Resistance On-Resistance vs. Drain Current -I D, Drain Current (A) On-Resistance vs. Junction Temperature V GS =-V I D =-A V GS =-.5V V GS =-V T J, Junction Temperature ( C) -VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) Gate-Source Voltage vs. Gate Charge V DS =-3V I D =-A Q g, Gate Charge (nc) On-Resistance vs. Gate-Source Voltage I D =-A V GS, Gate to Source Voltage (V) 6 Version: A7

7 -ID, Drain Current (A) -IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM652CR CHARACTERISTICS CURVES (P-Channel) (T A = 25 C unless otherwise noted) Capacitance vs. Drain-Source Voltage BV DSS vs. Junction Temperature.2 2 I D =-ma 6 2 CISS CRSS COSS V DS, Drain to Source Voltage (V) BVDSS (Normalized) T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case R DS(ON) Source-Drain Diode Forward Current vs. Voltage SINGLE PULSE R ӨJC =3. C/W T C =25 C ms. -V DS, Drain to Source Voltage (V) V SD, Body Diode Forward Voltage (V) Normalized Effective Transient Thermal Impedance, ZӨJC. Normalized Thermal Transient Impedance, Junction-to-Case Duty=.5 Duty=.2 Duty=. Duty=.5 Duty=.2 Duty=. Single..... t, Square Wave Pulse Duration (sec) SINGLE PULSE R ӨJC =3. C/W Notes: Duty = t / t 2 T J = T C + P DM x Z ӨJC x R ӨJC 7 Version: A7

8 TSM652CR PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM TSC 652 GYWWF G = Halogen Free Y = Year Code WW = Week Code (~52) F = Factory Code Version: A7

9 TSM652CR Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9 Version: A7

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