DEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units

Transcription

1 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2 Features 400V / 10A,R DS(on) V GS =10V, I D =6A Fast switching 100% avalanche tested Improved dv/dt capability Fast switch 3 Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 400 V I D Drain Current - Continuous (T C = 25 C) 10 A - Continuous (T C = 100 C) 6 A I DM Drain Current Pulsed 40 A V GS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy 520 mj dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P D Power Dissipation (T C = 25 C) 134 W - De-ate above 25 C 1.08 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds 300 C *note : Repetitive Rating: Pulse width limited by maximum junction temperature. V DD =50V, starting T J =25, L=9.1mH, R G =25Ω, I AS =10A I SD 10A, di/dt 300A/µs, VDD VB DSS, TJ 150 Rev B 1/7

2 4 Thermal Characteristics Symbol Parameter Units R θjc Thermal Resistance, Junction-to-Case 0.93 C/W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 C/W 5 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage BV DSS / Breakdown Voltage T J Temperature Coefficient I DSS Gate to Source leakage current I GSSF Gate-Body Leakage Current, Forward I GSSR Gate-Body Leakage Current, Reverse V GS = 0 V, I D = 250 µa V I D = 250 µa, Referenced to 25 C V/ C V DS = 400 V, V GS = 0 V µa V GS = 30 V, V DS = 0 V na V GS = -30 V, V DS = 0 V na On Characteristics V GS(th) Gate Threshold Voltage V DS = VGS, I D = 250 µa V R DS(on) Static Drain-Source On- V Resistance GS = 10 V, I D = 6 A Ω g FS Forward Transconductance V DS = 15 V, I D = 5 A S Dynamic Characteristics C iss Input Capacitance pf C oss Output Capacitance V DS = 25 V, V GS = 0 V, pf Reverse Transfer f = 1.0 MHz C rss pf Capacitance Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 200 V, I D = 10A, ns t d(off) Turn-Off Delay Time R G = 9.1 Ω, RD= ns t f Turn-Off Fall Time ns Q g Total Gate Charge nc V DS = 320 V, I D = 10A, Q gs Gate-Source Charge nc V GS = 10 V Gate-Drain Charge nc Q gd Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode forward Current I SM Maximum Pulsed Drain-Source Diode Forward Current A A Rev B 2/7

3 V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 10 A V t rr Reverse Recovery Time V GS = 0 V, I F = 10 A, ns Reverse Recovery Charge di F / dt = 100 A/µs µc Q rr Notes: Repetitive Rating: Pulse width limited by maximum junction temperature. V DD =50V, starting T J =25, L=9.1mH, RG=25Ω, I AS =10A I SD 10A, di/dt 100A/µs, V DD V (BR)DSS, TJ 150 Pulse Test: Pulse width 300µs, Duty cycle 2%. Depend on FT Test. Rev B 3/7

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6 6 Package Dimensions TO-220 TO-220 DIMENSION DIM MILLIMETERS MIN MAX TYP. A B C D E F 2.54(typ.) 2.54 G 5.08(typ.) 5.08 H I J K L M N O P Q (typ.) 2.00 R TO220F Rev B 6/7

7 Note The declared data are only a description of product, information furnished is believed to be accurate and reliable. However, alpha pacific assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of alpha pacific. alpha pacific reserves the right to make changes on this specification without notice at any time. This publication supersedes and replaces all information previously supplied. All alpha pacific products are not authorized for use as critical components in life support devices or systems, except by a written approval of alpha pacific. Reprinting this data sheet - or parts of it - is only allowed with a license of alpha pacific. contact alpha pacific Technologies Co., Ltd 3F-6, No.18, Lane 609, Sec.5 Chung Sin road, Shan Chang City Taipei-Hsien, TAIWAN, R.O.C tel fax internet Rev B 7/7