N-Channel Power MOSFET 500V, 9A, 0.9Ω

Transcription

1 TSM9ND5CI N-Channel Power MOSFET 5V, 9A,.9Ω FEATURES % UIS and Rg tested Advanced planar process Compliant to RoHS Directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 5 V R DS(on) (max).9 Ω Q g 4.5 nc APPLICATIONS Power Supply AC/DC LED Lighting ITO- ABSOLUTE MAXIMUM RATINGS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 5 V Gate-Source Voltage V GS ±3 V Continuous Drain Current (Note ) T C = 5 C I D 9 A T C = C 5.7 A Pulsed Drain Current (Note ) I DM 36 A Total Power T C = 5 C P DTOT 5 W Single Pulse Avalanche Energy (Note 3) E AS 3.5 mj Single Pulse Avalanche Current (Note 3) I AS 5.5 A Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance R ӨJC.5 C/W Junction to Ambient Thermal Resistance R ӨJA 6 C/W Thermal Performance Notes: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while R ӨCA is determined by the user s board design. Version: A87

2 TSM9ND5CI ELECTRICAL SPECIFICATIONS (T A = 5 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = V, I D = 5µA BV DSS V Gate Threshold Voltage V DS = V GS, I D = 5µA V GS(TH) V Gate Body Leakage V GS = ±3V, V DS = V I GSS ± na Zero Gate Voltage Drain Current V DS = 5V, V GS = V I DSS µa Drain-Source On-State Resistance (Note 4) V GS = V, I D =.3A R DS(on) Ω (Note 5) Dynamic Total Gate Charge Q g V DS = 4V, I D = 4.5A, Gate-Source Charge Q gs V GS = V Gate-Drain Charge Q gd Input Capacitance C iss V DS = 5V, V GS = V, Output Capacitance C oss f =.MHz Reverse Transfer Capacitance C rss Gate Resistance R g -- Ω (Note 6) Switching Turn-On Delay Time t d(on) Turn-On Rise Time V DD = 5V, R G = 5Ω, t r Turn-Off Delay Time I D = 4.5A, V GS = V t d(off) Turn-Off Fall Time t f Source-Drain Diode Body-Diode Continuous Forward Current I S A Body-Diode Pulsed Current I SM A Forward On Voltage (Note 4) I S = 4.5A, V GS = V V SD V Reverse Recovery Time I S = 4.5A t rr ns Reverse Recovery Charge di F /dt = A/μs Q rr μc Notes:. Current limited by package.. Pulse width limited by the maximum junction temperature. 3. L = mh, I AS = 5.5A, V DD = 5V, R G = 5Ω, Starting T J = 5 o C 4. Pulse test: PW 3µs, duty cycle %. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. nc pf ns ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM9ND5CI CG ITO- 5pcs / Tube Version: A87

3 (Normalized) ID, Drain Current (A) ID, Drain Current (A) TSM9ND5CI CHARACTERISTICS CURVES (T C = 5 C unless otherwise noted) Output Characteristics Transfer Characteristics 8 6 V GS =V V GS =9V V GS =8V V GS =7V V GS =6V V GS =5V V DS, Drain to Source Voltage (V) V GS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current V GS =V I D, Drain Current (A) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge V DS =4V I D =4.5A Q g, Gate Charge (nc) RDS(on), Drain-Source On-Resistance On-Resistance vs. Junction Temperature V GS =V I D =.3A T J, Junction Temperature ( C) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage I D =.3A V GS, Gate to Source Voltage (V) 3 Version: A87

4 ID, Drain Current (A) IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM9ND5CI CHARACTERISTICS CURVES (T C = 5 C unless otherwise noted) 8 Capacitance vs. Drain-Source Voltage. BV DSS vs. Junction Temperature I D =5uA 6 4 CISS CRSS COSS. V DS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case BVDSS (Normalized) T J, Junction Temperature ( C) Source-Drain Diode Forward Current vs. Voltage R DS(ON) 5. SINGLE PULSE R ӨJC =.5 C/W T C =5 C V DS, Drain to Source Voltage (V) V SD, Body Diode Forward Voltage (V) Normalized Effective Transient Thermal Impedance, ZӨJC.. Normalized Thermal Transient Impedance, Junction-to-Case Duty=.5 Duty=. Duty=. Duty=.5 Duty=. Duty=. Single..... t, Square Wave Pulse Duration (sec) SINGLE PULSE R ӨJC =.5 C/W Notes: Duty = t / t T J = T C + P DM x Z ӨJC x R ӨJC 4 Version: A87

5 TSM9ND5CI PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO- MARKING DIAGRAM TSC 9ND5 GYWWF G = Halogen Free Y = Year Code WW = Week Code (~5) F = Factory Code 5 Version: A87

6 TSM9ND5CI Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A87