MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

Size: px
Start display at page:

Download "MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω"

Transcription

1 General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for SMPS, HID and general purpose applications. MDI5N/MDD5N N-Channel MOSFET V, 3. A,.6Ω Features V DS = V = 3.A R DS(ON).6Ω Applications Power Supply PFC GS = GS = V D G D S I-PAK (TO-5) G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =5 o C 3. A T C = o C.5 A Pulsed Drain Current () M 3.6 A Power Dissipation T C =5 o C 5 W P D Derate above 5 o C.36 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt.5 V/ns Repetitive Pulse Avalanche Energy () E AR.5 mj Single Pulse Avalanche Energy () E AS 7 mj Junction and Storage Range T J, T stg -55~5 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja Thermal Resistance, Junction-to-Case () R θjc.75 o C/W

2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDI5NTH -55~5 o C TO-5(I-PAK) Tube Halogen Free MDD5NRH -55~5 o C D-PAK Reel Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA Drain Cut-Off Current SS V DS = V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, =.7A..6 Ω Forward Transconductance g fs V DS = 3V, =.7A -. - S Dynamic Characteristics Total Gate Charge Q g - 9 Gate-Source Charge Q gs V DS = 3V, = 3.A, V GS = V (3) -.5 Gate-Drain Charge Q gd - Input Capacitance C iss - 9 Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz - 3 Output Capacitance C oss - 6 Turn-On Delay Time t d(on) - Rise Time t r V GS = V, V DS = V, = 3.A, - 5 Turn-Off Delay Time t d(off) R G = 5Ω (3) - Fall Time t f - 3 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S A V SD I S = 3.A, V GS = V -. V t rr - ns I F = 3.A, di/dt = A/µs Q rr -. µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature TJ(MAX)=5 C. 3. I SD 3.A, di/dt A/us, V DD =5V, R g =5Ω, Starting TJ=5 C. L=6.mH, I AS =3.A, V DD =5V, R g =5Ω, Starting TJ=5 C

3 ,Drain Current [A] V gs =5.5V =6.V =6.5V =7.V =8.V =.V =5.V Notes. 5 μs Pulse Test. T C =5 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics R DS(ON) [Ω ] V GS =.V. 5,Drain Current [A] V GS =V Fig. On-Resistance Variation with Drain Current and Gate Voltage 3.. R DS(ON), (Normalized) Drain-Source On-Resistance V GS = V. =.7 A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa T J, Junction [ o C] Fig.3 On-Resistance Variation with T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. V DS =3V. V GS = V. 5us pulse [A] 5 5 R Reverse Drain Current [A] V GS [V] Fig.5 Transfer Characteristics V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3

4 V GS, Gate-Source Voltage [V] 8 6 Note : I = 5A D 6 8 Q G, Total Gate Charge [nc] 8V V 3V Capacitance [pf] C oss C iss C rss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. V GS = V. f = MHz Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 5 µs, Drain Current [A] - Single Pulse T J =Max rated T C =5 DC µs ms ms ms, Drain Current [A] V DS, Drain-Source Voltage [V] T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case 5 D=.5. single Pulse R thjc =.75 /W T C = 5 Z θ JC (t), Thermal Response Duty Factor, D=t /t Power (W) 3 - single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.75 /W t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation

5 Physical Dimension TO-5 (I-PAK) Dimensions are in millimeters, unless otherwise specified 5

6 Physical Dimension D-PAK, 3L Dimensions are in millimeters, unless otherwise specified 6

7 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 7

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance

More information

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance

More information

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides

More information

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,

More information

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,

More information

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description The MDD/INB uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD/INB is suitable device for SMPS,

More information

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0. General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable

More information

MDD4N60/MDI4N60 N-Channel MOSFET 600V, 3.5A, 2.0Ω

MDD4N60/MDI4N60 N-Channel MOSFET 600V, 3.5A, 2.0Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance

More information

Characteristics Symbol Rating Unit

Characteristics Symbol Rating Unit General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6. General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable

More information

MDI6N60 N-Channel MOSFET 600V, 4.5A, 1.4Ω

MDI6N60 N-Channel MOSFET 600V, 4.5A, 1.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable

More information

MDP13N50B / MDF13N50B

MDP13N50B / MDF13N50B General Description The MDP/F13N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F13N5B is suitable device for

More information

MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω

MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N6 is suitable device for SMPS,

More information

Features V DS = 500V I D = 9.0A R DS(ON) 0.85Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D

Features V DS = 500V I D = 9.0A R DS(ON) 0.85Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D General Description The MDP/F9N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F9N5B is suitable device for

More information

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4. General Description MDU1512 Single N-channel Trench MOSFET 3V, 1.A, 3.4mΩ The MDU1512 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω

MDD2N60/MDI2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

MDV1548 Single N-Channel Trench MOSFET 30V

MDV1548 Single N-Channel Trench MOSFET 30V General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable

More information

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1.

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1. ㅊ General Description MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27Ω General Description The MDF8N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF8N5 is suitable device for SMPS,

More information

MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω

MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description The MDP13N5 uses advanced Magnachip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N5 is suitable device for SMPS,

More information

Features V DS = 500V I D = 5.0A R DS(ON) 1.4Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D

Features V DS = 500V I D = 5.0A R DS(ON) 1.4Ω. Applications. Power Supply PFC Ballast. T C =25 o C I D General Description The MDP/F5N5B uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N5B is suitable device for

More information

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

MDV1545 Single N-Channel Trench MOSFET 30V

MDV1545 Single N-Channel Trench MOSFET 30V General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable

More information

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ MDU1511 Single N-Channel Trench MOSFET 3V ㅊ MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ General Description Features The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited) General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device

More information

MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ

MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ General Description MDP15N75 Single N-channel Trench MOSFET 15V, 1A, 7.5mΩ The MDP15N75 uses advanced MagnaChip s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω

MDF12N50 N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description The MDF12N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF12N5 is suitable device for SMPS,

More information

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω MDQ18N5 N-Channel MOFET 5V MDQ18N5 N-Channel MOFET 5V, 2.A,.27Ω. eneral Description These N-channel MOFET are produced using advanced MagnaChip s MOFET Technology, which provides low onstate resistance,

More information

MMIS70H900Q 700V 1.4Ω N-channel MOSFET

MMIS70H900Q 700V 1.4Ω N-channel MOSFET MMIS70H900Q 700V 1.4Ω N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

MMD65R900Q 650V 0.90Ω N-channel MOSFET

MMD65R900Q 650V 0.90Ω N-channel MOSFET MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

MMD50R380P 500V 0.38Ω N-channel MOSFET

MMD50R380P 500V 0.38Ω N-channel MOSFET MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

MMQ60R190P 600V 0.19Ω N-channel MOSFET

MMQ60R190P 600V 0.19Ω N-channel MOSFET MMQ60R190P 600V 0.19Ω N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the

More information

GP1M018A020CG GP1M018A020PG

GP1M018A020CG GP1M018A020PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide

More information

GP2M020A050H GP2M020A050F

GP2M020A050H GP2M020A050F Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A

More information

GP2M005A050CG GP2M005A050PG

GP2M005A050CG GP2M005A050PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low

More information

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS

More information

P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ. Characteristics Symbol Rating Unit. T C=25 o C A T C=100 o C

P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ. Characteristics Symbol Rating Unit. T C=25 o C A T C=100 o C General Description The MDD375 uses advanced MagnaChip s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low R DS(ON), Low Gate Charge

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar

More information

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,

More information

12N60 12N65 Power MOSFET

12N60 12N65 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

MDD1752. MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ. Features. General Description. Applications

MDD1752. MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ. Features. General Description. Applications General Description The MDD1752 uses advanced MagnaChip s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low, low gate charge can be offering

More information

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized

More information

UNISONIC TECHNOLOGIES CO., LTD 5N60

UNISONIC TECHNOLOGIES CO., LTD 5N60 UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching

More information

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe

More information

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings

KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D

More information

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to

More information

UNISONIC TECHNOLOGIES CO., LTD UT50N04

UNISONIC TECHNOLOGIES CO., LTD UT50N04 UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high

More information