TSM1N60L 600V N-Channel Power MOSFET
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1 TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 600 V GS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Features Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. I DSS and V DS(on) specified at elevated temperature Block Diagram Ordering Information Part No. Package Packing TSM1N60LCP RO TO Kpcs / 13 Reel TSM1N60LCH C5 TO pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Continuous Drain Current I D 1 A Pulsed Drain Current I DM 4 A Continuous Source Current (Diode Conduction) a,b I S 1 A Single Pulse Drain to Source Avalanche Energy (V DD = 100V, V GS =10V, I AS =2A, L=10mH, R G =25Ω) EAS 20 mj Maximum Power = 25 o C P D 2.5 W Operating Junction Temperature T J +150 Operating Junction and Storage Temperature Range T J, T STG -55 to +150 o C o C 1/7 Version: A07
2 Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) T L 10 S Thermal Resistance - Junction to Ambient RӨ JA 62.5 o C/W Notes: Surface mounted on FR4 board t 10sec Electrical Specifications (Ta = 25 o C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS V Drain-Source On-State Resistance V GS = 10V, I D = 0.6A R DS(ON) Ω Gate Threshold Voltage V DS = V GS, I D = 250uA V GS(TH) V Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V I DSS ua Gate Body Leakage V GS = ±20V, V DS = 0V I GSS ± 100 na Forward Transconductance V DS 50V, I D = 0.5A g fs S Diode Forward Voltage I S = 1A, V GS = 0V V SD V Dynamic b Total Gate Charge Q g V DS = 400V, I D = 1A, Gate-Source Charge Q gs V GS = 10V Gate-Drain Charge Q gd nc Input Capacitance C iss V DS = 25V, V GS = 0V, Output Capacitance C oss f = 1.0MHz Reverse Transfer Capacitance C rss pf Switching c Turn-On Delay Time t d(on) Turn-On Rise Time V GS = 10V, I D = 1A, t r Turn-Off Delay Time V DS = 300V, R G = 6Ω t d(off) ns Turn-Off Fall Time t f Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. For design reference only, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/7 Version: A07
3 Electrical Characteristics Curve (Ta = 25 o C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: A07
4 Electrical Characteristics Curve (Ta = 25 o C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: A07
5 SOT-252 Mechanical Drawing TO-252 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.3BSC 0.09BSC A1 4.6BSC 0.18BSC B C D E F G G G H I J K L M Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 5/7 Version: A07
6 SOT-251 Mechanical Drawing TO-251 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A A b C D D E e F L L Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 6/7 Version: A07
7 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A07
8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Taiwan Semiconductor: TSM1N60LCP
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