-55 to 150 C Operating Junction Temperature Range -55 to 150 C. Parameter

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1 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Performance R DS(ON) 25mΩ G RoHS-compliant, halogen-free I D 28A S BV DSS 30V Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP40T03GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP40T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. Absolute Maximum Ratings G D S G D S TO-263 (S) TO-220 (P) V DS V GS Symbol I D at T C =25 C I D at T C =0 C I DM P D at T C =25 C T STG T J Parameter Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±25 V Continuous Drain Current 28 A Continuous Drain Current 24 A Pulsed Drain Current 1 95 A Total Power Dissipation W Storage Temperature Range -55 to 150 C Operating Junction Temperature Range -55 to 150 C Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 C/W Ordering Information AP40T03GS-HF-3TR AP40T03GP-HF-3TB RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel) RoHS-compliant, halogen-free TO-220, shipped in tubes /6

2 Electrical Specifications at T j =25 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA V BV DSS / Tj Breakdown Voltage Temperature Coefficient Reference to 25 C, I D =1mA V/ C R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =18A mω V GS =4.5V, I D =14A mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =250uA 1-3 V g fs Forward Transconductance V DS =V, I D =18A S I DSS Drain-Source Leakage Current (T j =25 o C) V DS =30V, V GS =0V ua Drain-Source Leakage Current (T j =150 o C) V DS =24V,V GS =0V ua I GSS Gate-Source Leakage V GS = ±25V - - ±0 na Q g Total Gate Charge 2 I D =18A nc Q gs Gate-Source Charge V DS =20V nc Q gd Gate-Drain ("Miller") Charge V GS =4.5V nc t d(on) Turn-on Delay Time 2 V DS =15V ns t r Rise Time I D =18A ns t d(off) Turn-off Delay Time R G =3.3Ω, VGS=V ns t f Fall Time R D =0.83Ω ns C iss Input Capacitance V GS =0V pf C oss Output Capacitance V DS =25V pf C rss Reverse Transfer Capacitance f=1.0mhz pf Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units I S Continuous Source Current ( Body Diode ) V D =V G =0V, V S =1.3V A I SM Pulsed Source Current ( Body Diode ) A V SD Forward On Voltage 2 T j =25 C, I S =28A, V GS =0V V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us, duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2/6

3 Typical Electrical Characteristics T C =25 o C V 8.0V T C =150 o C V 8.0V I D, Drain Current (A) V V G =4.0V I D, Drain Current (A) V V G =4.0V V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D =14A T C =25 C I D =18A V G =V R DS(ON) (mω) Normalized R DS(ON) V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature T j =150 o C T j =25 o C I S (A) V GS(th) (V) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C ) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 3/6

4 Typical Electrical Characteristics (cont.) f=1.0mhz I D =18A C iss V GS, Gate to Source Voltage (V) V DS =V V DS =15V V DS =20V C (pf) 0 C oss C rss Q G, Total Gate Charge (nc) V DS,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 0 1 I D (A) 1 T C =25 o C Single Pulse V DS,Drain-to-Source Voltage (V) 0us 1ms ms 0ms DC Normalized Thermal Response (R thjc ) Duty factor = P DM 0.02 t 0.01 T Single Pulse Duty Factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance V DS 90% V G V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform 4/6

5 Package Dimensions: TO-220 E E1 φ b1 L1 L5 D1 D L4 L A c1 SYMBOLS Millimeters MIN NOM MAX A b D c E L L D1 c REF b L e L REF φ E1 7.4 REF, b c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Marking Information: TO-220 Product: AP40T03 40T03GP Package code GP = RoHS-compliant halogen-free TO-220 YWWSSS Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence 5/6

6 Package Dimensions: TO-263 L2 e E b1 b D L3 L4 Millimeters SYMBOLS MIN NOM MAX A A A b b c c D E e L L L A 1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions. c1 A1 c. φ Marking Information: TO T03GS YWWSSS Product: AP40T03 Package code: GS = RoHS-compliant halogen-free TO-263 Date Code (YWWSSS) Y: Last digit of the year WW: Work week SSS : Lot code sequence 6/6