PDNM6ET20V05 Dual N-Channel, Digital FET

Transcription

1 PDNM6ET2V5 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 2 9@ V GS =4.5V.5 SOT-563 S2 1 6 D2 G2 2 5 G1 D1 3 4 S1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage V DS 2 V Gate-Source Voltage V GS 8 V Continuous Drain Curren(T J =15 ) Continuous I D.5 Pulsed 1.5 Maximum Power Dissipation P D.3 W Operating Junction and Storage Temperature Range T J, T STG -55 to 15 Electrostatic Discharge Rating MIL-STD-883D Human Body Model (1pF/15Ω) ESD 6. kv Thermal Characteristics Parameter Symbol Maximum Units Thermal Resistance, Junction-to-Ambient R θja 415 /W A Rev.6 1

2 PDNM6ET2V5 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =25μA,V GS =V 2 - V Zero Gate Voltage Drain Current I DSS V DS =2V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =8V na Gate Threshold Voltage V GS(th) V DS =V GS, I D =25μA V Static Drain-Source On-Resistance R DS(ON) V GS =4.5V, I D =.5A 9.34 V GS =2.7V, I D =A Ω On-State Drain Current I D(ON) V GS =2.7V,V DS =5V.5 A Forward Trans conductance g FS V DS =5V, I D =.5A 1.45 S Total Gate Charge Qg Gate-Source Charge Qgs V GS =4.5V, V DS =5V, I D =.5A.38 Gate-Drain Charge Qgd.45 nc Input Capacitance C ISS - 5 pf Output Capacitance C OSS V GS =V, V DS =1V, f=1mhz - 28 pf Reverse Transfer Capacitance C RSS - 9 pf Turn-On Delay Time t d(on) ns Turn-Off Delay Time Turn-On Rise Time t d(off) t r V DD =5V, R GEN =5Ω, V GS =4.5V,I D =.5A ns ns Turn-On Fall Time t f ns Drain-Source Diode Forward Voltage V SD V GS =V,I S =5A V Maximum Body-Diode Continuous Current I S 5 A Rev.6 2

3 PDNM6ET2V5 Typical Characteristics 1.2 2V 1.2 V DS 1V ID, Drain Current (A) V GS =2.6V to 5.V.8 1.8V.4 1.6V 1.4V V DS, Drain-to-Source Voltage (V) Fig 1. On-Region Characteristics ID, Drain Current (A) T J = V GS, Gate-to-Source Voltage (V) Fig 2. Transfer Characteristics RDS(ON),Drain-to-Source Resistance (Ω).4 V GS =4.5V.3 T J = I D,Drain Current (A) I D,Drain Current (A) Fig 3. On-Resistance vs. Drain Current and Temperature Fig 4. On-Resistance vs. Drain Current and Temperature RDS(ON),Drain-to-Source Resistance (Ω).4 V GS =2.5V.3 T J =-55 RDS(ON),Drain-to-Source Resistance (Normalized) I D =7.A V GS =4.5v C, Capacitance (pf) V GS =V C ISS C OSS T J, Junction Temperature ( ) Fig 5. On-Resistance Variation with Temperature C RSS Drain-to-Source Voltage (V) Fig 6. Characteristics Variation Rev.6 3

4 PDNM6ET2V5 VGS, Gate-to-Source Voltage (V) Q GS Q GD Q T IS, Source Current (A) 1 I D =A Q G,Total Gate Charge (nc) VSD, Source-to-Drain Voltage (V) Fig 7. Gate-to-Source Voltage vs. Total Gate Charge Fig 8. Diode Forward Voltage vs. Current V GS =2.5V r (t), Normalized Transient Thermal Resistance 1..1 D= Single Pulse T Time (s) Fig 9.Normalized Thermal Response Rev.6 4

5 Product dimension (SOT-563) PDNM6ET2V5 A E G (5) B F (1) C D H Dim Millimeters Inches MIN MAX MIN MAX A B C.5BSC.2BSC D E F G H Ordering information Device Package Shipping PDNM6ET2V5 SOT-563 (Pb-Free) 3 / Tape & Reel Rev.6 5

6 PDNM6ET2V5 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.6 6