AP9997GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Transcription

1 P9997GP RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D G Description dvanced Power MOSFETs from PEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO- package is widely preferred for commercial-industrial through-hole applications. S G D S TO-(P) bsolute Maximum Ratings V DS V GS Symbol Parameter Rating Units I C =5 I C = I DM Drain-Source Voltage Gate-Source Voltage + Continuous Drain Current, V V Continuous Drain Current, V V 7 Pulsed Drain Current 3 P C =5 Total Power Dissipation 3.7 T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 V V W Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.6 /W Rthj-a Maixmum Thermal Resistance, Junction-ambient 6 /W Data and specifications subject to change without notice

2 P9997GP Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =m - - V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D = - - mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - 3 V g fs Forward Transconductance V DS =V, I D = S I DSS Drain-Source Leakage Current V DS =V, V GS =V u Drain-Source Leakage Current (T j =5 o C) V DS =V,V GS =V - - u I GSS Gate-Source Leakage V GS = +V, V DS =V n Q g Total Gate Charge I D = - 3 nc Q gs Gate-Source Charge V DS =V -. - nc Q gd Gate-Drain ("Miller") Charge V GS =V nc t d(on) Turn-on Delay Time V DS =5V ns t r Rise Time I D = ns t d(off) Turn-off Delay Time R G =3.3Ω,V GS =V ns t f Fall Time R D =5Ω -. - ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =5V pf C rss Reverse Transfer Capacitance f=.mhz pf Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =, V GS =V V t rr Reverse Recovery Time I S =, V GS =V - - ns Q rr Reverse Recovery Charge di/dt=/µs nc Notes:.Pulse width limited by Max. junction temperature..pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION. USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED. PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN.

3 P9997GP I D, Drain Current () 6 T C =5 o C V 7.V 5. V.5 V I D, Drain Current () 6 T C = 5 o C V 7.V 5. V.5 V V G = 3.V V G = 3. V Fig. Typical Output Characteristics Fig. Typical Output Characteristics 5 I D = T C =5 o C.. I D = V G =V R DS(ON) (mω) 3 Normalized R DS(ON) V GS Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig. Normalized On-Resistance v.s. Junction Temperature.6 I S () 6 T j =5 o C T j =5 o C Normalized V GS(th) (V) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3

4 P9997GP f=.mhz V GS, Gate to Source Voltage (V) 6 I D = V DS =V C (pf) C iss C oss C rss 6 Q G, Total Gate Charge (nc) V DS,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics I D () T c =5 o C Single Pulse us ms ms ms DC Normalized Thermal Response (R thjc ) Duty factor=.5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V DS 9% V G V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveform Fig. Gate Charge Waveform

5 DVNCED POWER ELECTRONICS CORP. Package Outline : TO- E L3 E φ b L D L L5 L L c SYMBOLS Millimeters MIN NOM MX.5..7 b b c..5.6 c... E E e L L L... L L L φ D b c.ll Dimensions re in Millimeters..Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO- LOGO 9997GP YWWSSS Part Number Package Code Date Code (ywwsss) Y:Last Digit Of The Year WW:Week SSS:Sequence meet Rohs requirement for low voltage MOSFET only 5